Fujitsu Corporation

Fujitsu Display Technologies Corporation

Satoru Kawai

Kiyoshi Ozaki

Tsuyoshi Kamada

Kenji Okamoto

Jun Inoue

Yoshio Dejima

Hideaki Takizawa

Kouji Tsukao

Kazuhiro Takahara

Yasuhiro Nasu

Ken-ichi Yanai

Ken-ichi Oki

Toshirou Kodama

Shintaro Yanagisawa

Nobuyoshi Takagi

A pair of substrates is disposed in parallel at a gap distance therebetween. Liquid crystal material containing liquid crystal molecules having negative dielectric anisotropy is filled in between the substrates. The liquid crystal molecules are homeotropically aligned. On the opposing surface of one of the substrates, pixel electrodes are disposed in a matrix form and data bus lines and gate bus lines are disposed. The gate bus line passes an inner area of each pixel electrode. Switching elements are formed on the opposing surface of the substrate. Each switching element is controlled by the gate bus line at another row. Protrusions are formed on the opposing surface of one of the substrates. The protrusions divide an area of the pixel electrode into a plurality of areas and each is bent on the gate bus line. A domain border regulating unit is formed on the opposing surface of the other of the substrates. The protrusions and domain border regulating unit define the borders of each domain.

Multidomain vertically aligned liquid crystal display device

A repairable integrated thin film transistor matrix substrate includes an insulated substrate, and a plurality of parallel gate bus lines and a plurality of accumulated capacitance bus lines formed on the insulated substrate. Each of the accumulated capacitance bus lines extend parallel to and between a pair of the gate bus lines, and has a plurality of auxiliary capacitance electrodes which extend from it. A first insulated film is provided on the gate and accumulated capacitance bus lines and the auxiliary capacitance electrodes. A plurality of operating films are formed on the first insulated film, and on each of the operating films, a corresponding thin film transistors are provided. At least two of the thin film transistors are electrically connected to each of the gate bus lines. Also included is a plurality of parallel drain bus lines which are provided substantially perpendicular to the gate and the accumulated capacitance bus lines on the first insulated film. Each drain bus line electrically connects at least two of the thin film transistors. In addition, a second insulated film having an opening over each of the thin film transistors is provided on the thin film transistors and the drain bus lines. Further, a plurality of pixel electrodes are provided on the second insulated film, which pixel electrodes being electrically connected to a corresponding one of the transistors via the opening. At least one first portion of at least one of the gate and the drain bus lines overlaps with at least one second portion of at least one of the auxiliary capacitance and the pixel electrodes. A method for repairing the matrix substrate generally includes electrically connecting a conductor to either sides of a defect to act as a bypass.

Repairable thin film transistor matrix substrate and method of repairing the substrate

An object of the present invention is to provide a fabrication method of a liquid crystal display which can reduce the number of masks used in a photolithography process. According to this structure, a gate bus line and a storage capacitor wiring are formed using a first mask, and first metal films are formed on the whole surface including a sidewall insulating film. Then, etching is performed using a second mask until an active semiconductor layer in a TFT forming area on the gate bus line and in an element separation area between pixels exposes. Along with an electroplating of a metal film on the first metal films on a drain electrode, a third metal film thinner than the second metal film is formed on an active semiconductor between the drain electrode and a source electrode and to a pixel electrode except the element separation area between pixels. Finally, using a third metal film as a mask, the third metal film is removed after removing the active semiconductor layer on the element separation area between pixels.

Fabrication method of liquid crystal display

To provide a liquid crystal display device which allows disconnection defects caused in the manufacturing process to be readily repaired with a higher success rate than conventional cases so that the device can be modified into a non-defective device, and a defect repairing method therefor. In a liquid crystal display device having a lead-out portion provided at a lowermost layer bus line formed on a transparent insulating substrate , and a pixel electrode layer formed on the lead-out portion through insulating layers , an independent intermediate conductive layer is formed between the lead-out portion and said pixel electrode layer

Liquid crystal display device and defect repairing method therefor

Repairable thin film transistor matrix substrate having overlapping regions between auxiliary capacitance electrodes and drain bus

A thin film transistor including a glass substrate and a gate electrode which is formed on the glass substrate. Source and drain electrodes are also provided. An insulating film covers at least the gate electrode and an amorphous semiconductor layer is formed on the insulating film. The semicondcutor layer includes a first portion having the source electrode formed thereon, a second portion having the drain electrode formed thereon, and a third portion formed between the first and second portions and located above the gate electrode, having a thin thickness which allows photolithographic light to permeate therethrough.

Process for producing a thin film field-effect transistor

An active matrix display device of an improved and simplified configuration and a driving method for the same are disclosed. The display device according to the present invention is characterized in that data bus lines and scan bus lines are separately formed on first and second transparent substrates respectively and the drain electrode of each TFT on the second substrate is connected to the scan bus line to be addressed next. This configuration eliminates earth bus lines of the prior art. This arrangement has effects of simplifying a bus line design and obtaining a higher yield and an increased opening rate for each display element. In order to drive the above device, an address pulse having a stepped waveform is used. Each address pulse has Vgon, Vgc, and Vgoff levels, and a width of two horizontal scan time. The first step of address pulse Vgc corresponds to the address time of the adjacent scan bus line to be scanned previously; and the second step Vgon corresponds to the address time for the TFT to be scanned. The present invention discloses a voltage relation for waveforms of the address pulse and data pulse in order to obtain a high quality display.

Active matrix display device and method for driving the same

Growing community of inventors

Yonago, Japan

Satoru Kawai