Seiko Epson Corporation

Satoru Ito

Junichi Karasawa

Takashi Kumagai

Satoru Kodaira

Kazuhiro Maekawa

Hisanobu Ishiyama

Takashi Fujise

Noboru Itomi

Shuji Kawaguchi

Masahiko Moriguchi

Akihiro Fukuzawa

Nobuyuki Imai

Takayuki Saiki

Katsuhiko Maki

Hiroyuki Takamiya

Akihiko Ito

Takashi Kurumisawa

Motoaki Nishimura

Hironori Kobayashi

Haruo Kamijo

Shingo Isozaki

Isamu Moriya

An integrated circuit device includes at least one data driver block for driving data lines, a plurality of control transistors TCand TC, each of the control transistors being provided corresponding to each output line of the data driver block and controlled by using a common control signal, and a pad arrangement region in which data driver pads Pand Pfor electrically connecting the data lines and the output lines QLand QLof the data driver block are disposed. The control transistors TCand TCare disposed in the pad arrangement region.

Integrated circuit device and electronic instrument

An integrated circuit device includes first to Nth circuit blocks CBto CBN, a first interface region disposed along a fourth side and on the Dside of the first to Nth circuit blocks CBto CBN, and a second interface region disposed along a second side and on the Dside of the first to Nth circuit blocks CBto CBN. A local line LLG formed using a wiring layer lower than an Ith layer is provided between the adjacent circuit blocks as at least one of a signal line and a power supply line. Global lines GLG and GLD formed using the Ith or higher wiring layer are provided along the direction Dover the circuit block disposed between the nonadjacent circuit blocks as at least one of a signal line and a power supply line.

An integrated circuit device includes first and second transistors NTrand PTrpush-pull connected between first and second power supply lines and outputting a voltage of one of the first and second power supply lines to a connection node ND by a charge-pump operation, and a pad PD electrically connected with the connection node ND and electrically connected with a flying capacitor, to which a given voltage is applied at one end, at the other end of the flying capacitor. The pad PD is disposed in an upper layer of at least one of the first and second transistors NTrand PTrso that the pad PD overlaps part or the entirety of at least one of the first and second transistors NTrand PTr

A semiconductor integrated circuit includes N pad rows in which pads are respectively arranged, and electrostatic discharge protection elements disposed in a lower layer of the N pad rows and connected with each pad in the N pad rows. The electrostatic discharge protection elements are disposed in a lower layer of regions at least partially including each of the N pads.

An integrated circuit device includes a pad PDx and an electrostatic discharge protection element ESDx formed in a rectangular region and electrically connected with the pad PDx. The pad PDx is disposed in an upper layer of the electrostatic discharge protection element ESDx so that an arrangement direction of the pads is parallel to a long side direction of the region in which the electrostatic discharge protection element ESDx is formed, and the pad PDx overlaps part or the entirety of the electrostatic discharge protection element ESDx.

A common voltage generation circuit includes a first operational amplifier which outputs an amplitude voltage of a common voltage based on a first power supply voltage, a second operational amplifier which outputs a high-potential-side voltage of the common voltage based on the first power supply voltage, and a low-potential-side voltage generation circuit which generates a low-potential-side voltage of the common voltage which is lower in potential than the high-potential-side voltage for the amplitude voltage by a charge-pump operation. The common voltage generation circuit supplies the high-potential-side voltage or the low-potential-side voltage to a common electrode which faces a pixel electrode specified by a scan line and a data line of an electro-optical device through an electro-optical substance.

Common voltage generation circuit employing a charge-pump operation to generate low-potential-side voltage

An integrated circuit device has a display memory which stores data for at least one frame displayed in a display panel which has a plurality of scan lines and a plurality of data lines, the display memory includes a plurality of RAM blocks, each of the RAM blocks including a plurality of wordlines, a plurality of bitlines, a plurality of memory cells, and a wordline control circuit, each of the RAM blocks is disposed along a first direction in which the bitlines extend, each of the memory cells has a short side and a long side, the bitlines are formed along a direction in which the long side of the memory cell extends, and the wordlines are formed along a direction in which the short side of the memory cell extends.

A display driver includes a common electrode charge storage switch provided between a first capacitor element connection node to which one end of a first capacitor element can be connected and a common electrode voltage output node to which a voltage of a common electrode opposite to a pixel electrode of an electro-optical device through an electro-optical material is supplied, a source charge storage switch provided between a second capacitor element connection node to which one end of a second capacitor element can be connected and a source voltage output node to which a voltage of a source line of the electro-optical device is supplied, and a node short circuit switch provided between the common electrode voltage output node and the source voltage output node.

Display driver, electro-optical device, and electronic instrument

An integrated circuit device includes an amplifier circuit that includes first to Nth amplifiers that are cascaded and receives an input signal, an A/D converter that performs an A/D conversion process on a signal amplified by the amplifier circuit, first to Nth D/A converters that are provided corresponding to the first to Nth amplifiers and used to perform an offset adjustment of the first to Nth amplifiers, and a control circuit that sets an offset adjustment of the first to Nth amplifiers using the first to Nth D/A converters and a gain adjustment of the first to Nth amplifiers.

An integrated circuit device having a display memory which stores data for at least one frame from among image information displayed in a display panel which has a plurality of scan lines and a plurality of data lines, the display memory including a plurality of wordlines, a plurality of bitlines, a plurality of memory cells, and a wordline control circuit; and the wordline control circuit selecting an identical wordline N times (N is an integer larger than one) from among the wordlines in one horizontal scan period of the display panel.

An A/D conversion circuit includes a continuous-time filter that performs a filtering process on an input signal, an SCF that is provided in a subsequent stage of the continuous-time filter and performs a filtering process utilizing the continuous-time filter as a prefilter, a cut-off frequency of the SCF being variably set corresponding to a frequency band of the input signal, an A/D converter that is provided in a subsequent stage of the SCF and performs an A/D conversion operation utilizing the continuous-time filter and the SCF as prefilters, and a digital filter that is provided in a subsequent stage of the A/D converter and performs a digital filtering process utilizing the continuous-time filter and the SCF as prefilters, a cut-off frequency of the digital filter being variably set corresponding to the frequency band of the input signal.

A/D conversion circuit and electronic instrument

An integrated circuit device includes an amplifier circuit that receives an input signal and performs an offset adjustment corresponding to a DC offset of the input signal and a gain adjustment corresponding to an amplitude of the input signal, a filter that is provided in a subsequent stage of the amplifier circuit, a cut-off frequency of the filter being variably set corresponding to a frequency band of the input signal, an A/D converter that is provided in a subsequent stage of the filter and performs an A/D conversion process on a signal amplified by the amplifier circuit, and a control circuit that sets an offset adjustment of the amplifier circuit, a gain adjustment of the amplifier circuit, and the cut-off frequency of the filter.

An integrated circuit device includes an amplifier circuit that includes first to Nth amplifiers, an A/D converter, first to Nth offset adjustment registers that are provided corresponding to the first to Nth amplifiers and store first to Nth offset adjustment data, first to Nth D/A converters provided corresponding to the first to Nth amplifiers, first to Nth offset value storage sections that store first to Nth offset value data, and a control circuit that calculates the first to Nth offset adjustment data based on the first to Nth offset value data, and sets the first to Nth offset adjustment data in the first to Nth offset adjustment registers.

An A/D conversion circuit includes an amplifier circuit that includes a plurality of amplifiers that are cascaded, a selector that selects one of output signals output from the plurality of amplifiers and outputs the selected output signal as a selector output signal, an A/D converter that A/D-converts the selector output signal output from the selector, a determination circuit that determines whether or not a voltage of the output signal output from each of the plurality of amplifiers is within a determination voltage range specified by a high-potential-side determination voltage and a low-potential-side determination voltage, and a control circuit that instructs the selector to select one of the output signals output from the plurality of amplifiers based on the determination result of the determination circuit.

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Suwa, Japan

Satoru Ito