Aisin Seiki Kabushiki Kaisha

Satoru Hori

Hitoshi Tauchi

Hirotsugu Sugiura

Joji Hachisuka

Makoto Yamazaki

Hiroyasu Kojima

Masayoshi Ando

A method for producing a thermoelectric semiconductor includes an ingot production step for producing an ingot of a thermoelectric semiconductor and an integrating step for integrating a plurality of the ingots by plastic deforming the ingots to produce an integrated ingot of the thermoelectric semiconductor. The large size of the thermoelectric semiconductor ingot having uniform performance and mechanical strength can be produced by integration of two or more ingots. Therefore, many wafers can be produce at one time in the slicing step, and productivity is improved. Further, two or more ingots are integrated by plastic deformation so that the connecting strength of the connecting interface is strong.

Method for producing a thermoelectric semiconductor

A process for producing a sintered thermoelectric semiconductor includes a first step of forming bulk crystals of a thermoelectric semiconductor and a second step of hot extrusion. The second step includes substeps of placing the bulk crystals in the cavity of a heated extrusion die, pushing the ram into the cavity, thereby compressing and crushing the bulk crystals and turning them into a molten or semi-molten state, and finally extruding the molten or semi-molten crystals, thereby sintering them and forming a sintered thermoelectric semiconductor.

Process for producing sintered thermoelectric semiconductor and sintered

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Nagoya, Japan

Satoru Hori