Shin-etsu Chemical Co., Ltd.

Satoru Fukuda

Masayuki Tanno

Toshihiko Ryuo

Toshiaki Watanabe

Yoshiyuki Shiono

Tatsuo Mori

A bismuth-substituted rare earth iron garnet single crystal suitable for Faraday rotators and optical isolators with reduced insertion loss due to suppressed valence fluctuation of Fe ions is provided. The bismuth-substituted rare earth iron garnet single crystal of the present invention is characterized by the composition formula (TbLnBiMg)(FeGaTiPt)O. In the composition formula above, 0.02≤f≤0.05, 0.02≤{3−(a+b+c)}≤0.08, and −0.01≤{3−(a+b+c)}−{f+5−(d+e+f)}≤0.01. Ln is a rare earth element and may be selected from Eu, Gd, Ho, Tm, Yb, Lu, and Y.

Bismuth-substituted rare earth iron garnet single crystal, faraday rotator, optical isolator, and method for producing bismuth-substituted rare earth iron garnet single crystal

Garnet crystal for Faraday rotator and optical isolator having the same

Faraday rotator and magneto-optical element using the same

Proposed is an improvement in a magnetostatic surface wave device such as an S/N enhancer comprising a thin film chip of a magnetic oxide garnet, e.g., gallium-substituted YIG epitaxially grown on the surface of a substrate, e.g., GGG, to which a magnetic field is applied within the plane of the thin film. The low-pass cut-off frequency of the microwaves can be decreased to 400 MHz or lower and the half-value width of magnetic resonance .DELTA.H can be small enough when the principal plane of the thin film of the magnetic oxide garnet is the (110) plane and the magnetic field applied thereto is in such a direction that the angle between the direction of the magnetic field and the direction of the &lt;100&gt; axis of the thin film within the (110) plane is in the range from .+-.27.degree. to .+-.33.degree..

Thin film chip of magnetic oxide garnet and magnetostatic surface wave

A novel rare earth-based oxide garnet single crystal suitable as a material of the elements in a magneto-optical device to exhibit a greatly decreased light absorption loss is proposed, which is prepared by the liquid epitaxial growth method on a oxide garnet single crystal wafer and having a chemical composition represented by the general formula

Oxide garnet single crystal

An improved epitaxial single crystal wafer suitable as a working element of magnetostatic wave devices is proposed which comprises a substrate single crystal wafer of a rare earth gallium garnet, e.g., gadolinium gallium garnet, neodymium gallium garnet and samarium gallium garnet, and an epitaxial layer formed thereon having a chemical composition, different from conventional yttrium iron garnet, Y.sub.3 Fe.sub.5 O.sub.12, of the formula

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Annaka, Japan

Satoru Fukuda