Hitachi Global Storage Technologies Netherlands B.v.

Spin Memory, Inc.

Western Digital (fremont), Inc.

Integrated Silicon Solution, (cayman) Inc.

Hgst Netherlands, B.v.

Western Digital Technologies, Inc.

Satoru Araki

David John Seagle

Robert Beach

Wei Zhang

Mohamad Towfik Krounbi

Yingjian Chen

Kuk-Hwan Kim

Ying Hong

Marcin Gajek

Dafna Beery

Michail Tzoufras

Kadriye Deniz Bozdag

Eric Ryan

Howard Gordon Zolla

Dustin William Erickson

Hiroaki Chihaya

Andrew J Walker

Wipul Jayasekara

Jinqiu Zhang

Diane L Brown

Andy Walker

Hardayal Singh Gill

Quang Le

Haiwen Xi

John Thomas Contreras

Daniele Mauri

Ming Jiang

Jeffrey Childress

Tsann Lin

Edward Hin Pong Lee

Stefan Maat

Matthew Joseph Carey

Jui-lung Li

Klaas Berend Klaassen

Xiao Z Wu

Marie-Claire Cyrille

Haifeng Wang

Thomas L Leong

Timothy James Minvielle

Chang Man Park

Ramona Marie Patterson

Alexander Driskill-Smith

A Magnetic Tunnel Junction (MTJ) device can include a reference magnetic layer having one or more trenches disposed therein. One or more sections of a tunnel barrier layer can be disposed on the walls of the one or more trenches. One or more sections of a free magnetic layer can be disposed on the one or more sections of the tunnel barrier layer in the one or more trenches. One or more sections of a conductive layer can be disposed on the one or more sections of the free magnetic layer in the one or more trenches. One or more insulator blocks can be disposed between corresponding sections of the tunnel barrier layer, corresponding sections of the free magnetic layer and corresponding sections of the conductive layer in the one or more trenches.

Magnetic tunnel junction devices including a free magnetic trench layer and a planar reference magnetic laver

Methods of manufacturing three-dimensional arrays with MTJ devices including a free magnetic trench layer and a planar reference magnetic layer

Aspects of the present technology are directed toward Integrated Circuits (IC) including a plurality of trenches disposed in a substrate about a set of silicide regions. The trenches can extend down into the substrate below the set of silicide regions. The silicide regions can be formed by implanting metal ions into portions of a substrate exposed by a mask layer with narrow pitch openings. The trenches can be formed by selectively etching the substrate utilizing the set of silicide regions as a trench mask. An semiconductor material with various degree of crystallinity can be grown from the silicide regions, in openings that extend through subsequently formed layers down to the silicide regions.

Patterned silicide structures and methods of manufacture

Magnetic tunnel junction devices including a free magnetic trench layer and a planar reference magnetic layer

A method for crystalized silicon structures from amorphous structures in a magnetic memory array, wherein the temperature needed to crystalize the amorphous silicon is lower than the temperature budget of the memory element so as to avoid damage to the memory element. An amorphous silicon is deposited, followed by a layer of Ti or Co. An annealing process is then performed which causes the Ti or Co to form TiSior CoSiand also causes the underlying amorphous silicon to crystallize.

High density MRAM integration

A method of fabricating a magnetic storage device includes depositing a first conductive material. The method further includes electrically isolating distinct instances of the first conductive material to form a first wire extending along a first direction. The method further includes depositing, on the distinct instances of the first conductive material, a set of device layers. The method further includes electrically isolating distinct instances of the device layers to form spin orbit torque magnetic random access memory (SOT-MRAM) devices positioned on distinct instances of the first conductive material. The method further includes depositing, on the distinct instances of the device layers, a layer of a second conductive material and electrically isolating a plurality of distinct instances of the layer of the second conductive material to form a plurality of second wires extending along a second direction. The second direction is different from the first direction.

Process for manufacturing scalable spin-orbit torque (SOT) magnetic memory

Three-dimensional arrays with MTJ devices including a free magnetic trench layer and a planar reference magnetic layer

A Magnetic Tunnel Junction (MTJ) can include an annular structure and a planar reference magnetic layer disposed about the annular structure. The annular structure can include an annular non-magnetic layer disposed about an annular conductive layer, an annular free magnetic layer disposed about the annular non-magnetic layer, and an annular tunnel insulator disposed about the annular free magnetic layer. The planar reference magnetic layer can be separated from the free magnetic layer by the annular tunnel barrier layer.

Three-dimensional arrays with magnetic tunnel junction devices including an annular discontinued free magnetic layer and a planar reference magnetic layer

A method for forming three-dimensional magnetic memory arrays by forming crystalized silicon structures from amorphous structures in the magnetic memory array, wherein the temperature needed to crystalize the amorphous silicon is lower than the temperature budget of the memory element so as to avoid damage to the memory element. An amorphous silicon is deposited, followed by a layer of Ti or Co. An annealing process is then performed which causes the Ti or Co to form TiSior CoSiand also causes the underlying amorphous silicon to crystallize.

A magnetic storage device includes a plurality of first wires extending along a first direction and a plurality of second wires extending along a second direction different from the first direction. The plurality of second wires form a grid with the plurality of first wires. The magnetic storage device further includes a plurality of spin orbit torque magnetic random access memory (SOT-MRAM) devices. Each of the plurality of SOT-MRAM devices is disposed at a respective position on the grid. The magnetic storage device further includes write circuitry, including a transistor coupled to each respective first wire of the plurality of first wires, to apply a first write current along the respective first wire in the first direction, and readout circuitry to read a data value stored by a respective SOT-MRAM device.

Scalable spin-orbit torque (SOT) magnetic memory

A magnetic storage device includes a first wire extending along a first direction and a plurality of spin orbit torque magnetic random access memory (SOT-MRAM) devices. Each of the plurality of SOT-MRAM devices is disposed at a respective position along the first wire. The magnetic storage device further includes write circuitry, including: a first transistor coupled to the first wire to apply a first write current along the first wire in the first direction; and a second transistor to select an individual SOT-MRAM device and apply a second write current to the individual SOT-MRAM device concurrently with the application of the first write current. The second write current is along an axis of the individual SOT-MRAM device. The magnetic storage device further includes readout circuitry to read a data value stored by the individual SOT-MRAM device.

Spin-orbit torque (SOT) magnetic memory with voltage or current assisted switching

Bit line structures for three-dimensional arrays with magnetic tunnel junction devices including an annular free magnetic layer and a planar reference magnetic layer

Structures and methods for fabrication servo and data heads of tape modules are provided. The servo head may have two shield layers spaced apart by a plurality of gap layers and a sensor. Similarly, the data head may have two shield layers spaced apart by a plurality of gap layers and a sensor. The distance between the shield layers of the servo head may be greater than the distance between the shield layers of the data head. The material of the gap layers may include tantalum or an alloy of nickel and chromium. The material for the gap layers permits deposition of gap layers with sufficiently small surface roughness to prevent distortion of the tape module and increase the stability of the tape module operation.

Material for use in a TMR read gap without adversely affecting the TMR effect

Growing community of inventors

San Jose, CA, United States of America

Satoru Araki