Sumitomo Electric Industries, Limited

Satomi Itoh

Toru Hiyoshi

Keiji Wada

Takeyoshi Masuda

Hiromu Shiomi

Shin Harada

Kyoko Okita

Makoto Sasaki

Yasuo Namikawa

Tomihito Miyazaki

Mitsuru Shimazu

A method of manufacturing an SiC semiconductor device includes the steps of forming a first oxide film on a first surface of an SiC semiconductor, removing the first oxide film, and forming a second oxide film constituting the SiC semiconductor device on a second surface exposed as a result of removal of the first oxide film in the SiC semiconductor. Between the step of removing the first oxide film and the step of forming a second oxide film, the SiC semiconductor is arranged in an atmosphere cut off from an ambient atmosphere.

Method and apparatus for manufacturing silicon carbide semiconductor device

A silicon carbide substrate is made of silicon carbide. In the silicon carbide substrate, a normal line of one main surface of the silicon carbide substrate and a normal line of a {03-38} plane form an angle of 0.5&#xb0; or smaller in an orthogonal projection to a plane including a &#x3c;01-10&#x3e; direction and a &#x3c;0001&#x3e; direction. In this way, there can be provided the silicon carbide substrate allowing for both improvement of channel mobility of a semiconductor device and stable characteristics thereof.

Method for manufacturing silicon carbide substrate and method for manufacturing semiconductor device

A method of cleaning a SiC semiconductor includes the steps of forming an oxide film at the surface of a SiC semiconductor, and removing the oxide film. At the step of forming an oxide film, an oxide film is formed using ozone water having a concentration greater than or equal to 30 ppm. The forming step preferably includes the step of heating at least one of the surface of the SiC semiconductor and the ozone water. Thus, there can be obtained a method of cleaning a SiC semiconductor that can exhibit cleaning effect on the SiC semiconductor.

Method of cleaning silicon carbide semiconductor

There is provided a method for manufacturing a SiC semiconductor device achieving improved performance. The method for manufacturing the SiC semiconductor device includes the following steps. That is, a SiC semiconductor is prepared which has a first surface having at least a portion into which impurities are implanted. By cleaning the first surface of the SiC semiconductor, a second surface is formed. On the second surface, a Si-containing film is formed. By oxidizing the Si-containing film, an oxide film constituting the SiC semiconductor device is formed.

Method for manufacturing silicon carbide semiconductor device

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Osaka, Japan

Satomi Itoh