Canon Kabushiki Kaisha

Satoko Iida

Takanori Watanabe

Jun Iba

Masahiro Kobayashi

Daisuke Yoshida

Hidekazu Takahashi

Tetsuya Itano

Mahito Shinohara

Kazuaki Tashiro

Shin Kikuchi

Junji Iwata

Ginjiro Toyoguchi

Takafumi Miki

Itsutaku Sano

An exemplary embodiment is a photoelectric conversion device having a photoelectric conversion portion, and a transfer portion. The transfer portion transfers charges of the photoelectric conversion portion. The photoelectric conversion portion includes first and second semiconductor regions of a first conductivity type. Charges generated by photoelectric conversion are accumulated in the first and second semiconductor regions. According to the structure of the first and second semiconductor regions of the exemplary embodiment or the method for manufacturing them, the transfer efficiency of charges can be improved while improving the sensitivity of the photoelectric conversion portion.

Photoelectric conversion device and method for manufacturing photoelectric conversion device

An image pickup apparatus includes: first and second photoelectric conversion units that are disposed in a semiconductor substrate, are configured to accumulate charges, and are of a first conductivity type; an electrode that is disposed on a region between the first and second photoelectric conversion units and is configured to control an electrical conduction between the first and second photoelectric conversion units; a first semiconductor region that is formed under the electrode and between the first and second photoelectric conversion units, is continuous from the first photoelectric conversion unit to the second photoelectric conversion unit, and is of the first conductivity type; and a second semiconductor region that is formed under the electrode and between the first and second photoelectric conversion units, is provided at a depth different from that of the first semiconductor region, and is of a second conductivity type.

Image pickup apparatus

An imaging apparatus comprising a plurality of pixels each of which includes a photoelectric conversion portion, and a light-condensing portion arranged on the plurality of pixels, wherein the light-condensing portion has an area smaller than an area of the photoelectric conversion portion.

Imaging apparatus and imaging system

A solid-state imaging device includes a photoelectric conversion unit that has a charge accumulation region and is configured to accumulate a charge that is generated in accordance with incident light in the charge accumulation region, and a transfer unit configured to transfer the charge accumulated in the charge accumulation region from the charge accumulation region. A potential distribution having a plurality of steps is formed in the charge accumulation region, and the further away from the transfer unit a step of the plurality of steps is, the greater the magnitude of the step is.

Solid-state imaging device and camera

A solid-state image pickup device includes a pixel including a photoelectric conversion element that converts light into an electric signal, a feedback amplifying circuit that amplifies a signal of the pixel using an amplification factor that is based on a variable feedback capacitor, a storage capacitor connected to an output node of the amplifying circuit via a first switch, and a load element connected to the output node of the amplifying circuit via a second switch. The second switch is in an on state during any one of or both of a period in which the feedback capacitor is reset and a period in which the first switch is in an on state.

Solid-state image pickup device

An image capturing device comprises a pixel array having a plurality of pixels each including a photoelectric conversion portion, a plurality of signal lines connected to the pixel array, a plurality of column amplifiers configured to respectively amplify signals transferred from the pixel array via the signal lines, the column amplifier comprising a first input terminal, a first output terminal, an amplifier having a second input terminal and a second output terminal, a feedback capacitance arranged between the second input terminal and the first output terminal, an input capacitance having an electrode connected to the first input terminal, and an electrode connected to the second input terminal, a first switch arranged between the second input terminal and the second output terminal, a second switch arranged between the first output terminal and the second output terminal, and a third switch arranged between a reference voltage terminal and the first output terminal.

Image capturing device, image capturing system, and method of driving image capturing device

A photoelectric conversion device includes an isolation portion defining an active region, a photoelectric converter arranged in the active region and including a charge accumulation region containing an impurity of a first conductivity type, a charge voltage converter arranged in the active region, and a transfer electrode arranged on the active region and configured to form a channel to transfer charges generated by the photoelectric converter to the charge voltage converter. In addition, a first semiconductor region is arranged in the active region between the photoelectric converter and the charge voltage converter and is covered with the transfer electrode and contains the impurity of the first conductivity type at a concentration lower than that in the charge accumulation region. A second semiconductor region extends in the active region along an interface of the isolation portion facing at least the first semiconductor region and is of a second conductivity type.

Photoelectric conversion device and image capturing system

A photoelectric conversion device includes a plurality of photoelectric conversion units each generating charges corresponding to light, an element isolation portion which electrically isolates the plurality of photoelectric conversion units, and an antireflection portion which is arranged to prevent reflection of light, which has entered the element isolation portion from above the element isolation portion, only on a bottom face of the element isolation portion or only on the bottom face and a lower part of a side face of the element isolation portion. In addition, a first semiconductor region is arranged below the element isolation portion. A refractive index of the antireflection portion takes a value between a refractive index of the element isolation portion and a refractive index of the first semiconductor region.

Antireflection portion in a shallow isolation trench for a photoelectric conversion device

Provided is a MOS type solid state imaging device, including a semiconductor substrate, a plurality of pixels arranged on the semiconductor substrate, each pixel having a light receiving element for generating a signal charge due to incident light, and a MOS transistor for reading the signal charge, and a hydrogen supply film arranged on the semiconductor substrate over the plurality of pixels and having a region corresponding to the light receiving element at least a part of which has a film thickness greater than the other part of the region.

Solid state imaging device comprising hydrogen supply film and antireflection film

An image sensing apparatus includes an image sensing region where a plurality of pixels are two-dimensionally arrayed. Each pixel includes a photoelectric conversion unit, and a semiconductor region arranged below an element isolation region having an insulation film to isolate the photoelectric conversion unit from an adjacent pixel. The semiconductor region includes a plurality of diffusion layers. The offset amount of at least one diffusion layer in the semiconductor region with respect to the normal line is larger in a pixel arranged at the peripheral portion of the image sensing region than a pixel arranged at the center of the image sensing region.

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Yokohama, Japan

Satoko Iida