L'air Liquide,societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude

American Air Liquide, Inc.

Satoko Gatineau

Jean-Marc Girard

Julien Gatineau

Wontae Noh

Daehyeon Kim

Nicolas Blasco

Christian Dussarrat

Changhee Ko

Grigory Nikiforov

Ziyun Wang

Clément Lansalot-Matras

Jooho Lee

Audrey Pinchart

Mikiko Kimura

Christophe Lachaud

Andreas Zauner

Stefan Wiese

Lanthanide-containing film forming compositions comprising Lanthanide precursors having the general formulae: wherein Ln is a Lanthanide; A is independently N, Si, B, P or O; each E is independently C, Si, B or P; m and n are independently 0, 1 or 2; m+n&#x3e;1; each R is independently an H or a C-Chydrocarbyl group; L is a &#x2212;1 anionic ligand selected from the group consisting of NR', OR&#x2032;, Cp, amidinate, &#x3b2;-diketonate, or keto-iminate, wherein R&#x2032; is an H or a C-Chydrocarbon group; and L&#x2032; is NR&#x2033; or O, wherein R&#x2033; is an H or a C-Chydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Lanthanide-containing films on one or more substrates via vapor deposition processes.

Lanthanide precursors and deposition of lanthanide-containing films using the same

Group 4 transition metal-containing film forming compositions are disclosed comprising Group 4 transition metal precursors having the formula: wherein M is Ti, Zr, or Hf; each A is independently N, Si, B or P; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n&#x3e;1; each R is independently a H or a C-Chydrocarbon group; each L is independently a &#x2212;1 anionic ligand selected from the group consisting of NR', OR&#x2032;, Cp, amidinate, &#x3b2;-diketonate, or keto-iminate, wherein R&#x2032; is a H or a C-Chydrocarbon group; and L&#x2032; is NR&#x2033; or O, wherein R&#x2033; is a H or a C-Chydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

Zirconium, hafnium, titanium precursors and deposition of group 4 containing films using the same

Disclosed are processes of removing layers from substrates using fluorinated reactants having the formula MF(adduct), wherein x ranges from 2 to 6 inclusive; n ranges from 0 to 5 inclusive; M is selected from the group consisting of P, Ti, Zr, Hf, V, Nb, Ta, Mo, and W; and the adduct is a neutral organic molecule selected from THF, dimethylether, diethylether, glyme, diglyme, triglyme, polyglyme, dimethylsulphide, diethylsulphide, or methylcyanide. The fluorinated reactants dry etch the nitride layers without utilizing any plasma.

Etching reactants and plasma-free etching processes using the same

Group 4 transition metal-containing film forming compositions comprising Group 4 transition metal precursors having the formula: wherein M is Ti, Zr, or Hf; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n&#x3e;1; o and p is independently 0, 1 or 2; o+p&#x3e;1; each R is independently hydrogen or or a C-Chydrocarbon group; each L is independently a &#x2212;1 anionic ligand selected from the group consisting of NR', OR&#x2032;, Cp, amidinate, &#x3b2;-diketonate or keto-iminate, wherein R&#x2032; is a H or a C-Chydrocarbon group; and each L&#x2032; is independently NR&#x2033; or O, wherein R&#x2033; is a H or a C-Chydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

Group 4 transition metal-containing film forming compositions are disclosed. The Group 4 transition metal-containing film forming compositions comprise Group 4 transition metal precursors having the formula L-M-CR-[(ER)&#x2014;NR]&#x2014;, wherein M is Ti, Zr, or Hf bonded in an &#x3b7;bonding mode to the Cp group; each E is independently C, Si, B or P; each R is independently a hydrogen or a C-Chydrocarbon group; and each L is independently a &#x2212;1 anionic ligand selected from the group consisting of NR', OR&#x2032;, Cp, amidinate, &#x3b2;-diketonate, or keto-iminate, wherein R&#x2032; is a H or a C-Chydrocarbon group and adjacent R&#x2032;s may be joined to form a hydrocarbyl ring; provided that at least one R on the Cp is Cto C. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

Cobalt-containing compounds, their synthesis, and their use for the deposition of cobalt containing films are disclosed. The disclosed cobalt-containing compounds have one of the following formulae: wherein each of R, R, R, Rand Ris independently selected from the group consisting of hydrogen and linear, cyclic, or branched hydrocarbon groups; provided that (a) R&#x2260;Rand/or Rwhen Rand Rand Rare a hydrocarbon group; (b) Rand Rare a hydrocarbon group when Ris H; or (c) Ris a C2-C4 hydrocarbon group when Rand Rare H.

Cobalt-containing compounds, their synthesis, and use in cobalt-containing film deposition

Disclosed are methods for purification of a crude TiIfor deposition of Ti-containing films including evaporating volatile impurities in the crude TiIunder vacuum at room temperature in a sublimator and removing the volatile impurities, placing the sublimator in a hot oil bath under vacuum at a temperature to evaporate TiIand form powders or a solid, and sublimating the powers or the solid under vacuum at the temperature to obtain the purified TiI. Disclosed are methods for storage of a pure TiIincluding drying a stainless-steel canister, instantaneously moving the dried stainless steel canister into a glove box under inert atmosphere at room temperature, moving the pure TiIinto the glove box, filling the pure TiIinto the dried stainless-steel canister, and sealing the dried stainless steel canister containing the pure TiIwith metallic sealing.

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Manganese-containing film forming compositions, their preparation, and their use for the vapor deposition of films are disclosed. The manganese-containing film forming compositions comprise silylamide-containing precursors, particularly {Mn[N(SiMeEt)]}.

Manganese-containing film forming compositions, their synthesis, and use in film deposition

Cobalt-containing compounds, their synthesis, and their use for the deposition of cobalt containing films are disclosed. The disclosed cobalt-containing compounds have one of the following formulae: wherein each of R, R, R, Rand Ris independently selected from Hydrogen; halogen; linear, cyclic or branched hydrocarbons; primary amino ligands (&#x2014;NHR); or secondary amino ligands (&#x2014;NRR'), with R and R&#x2032; independently being H or a linear, cyclic or branched hydrocarbon, provided at least one of R, R, or Rin Formula I and Ror Rin Formula II is an amino ligand. 

Vapor deposition methods to form Group 8-containing films are disclosed. The vapor of a Group-8 containing film forming composition is introduced into a reactor containing a substrate. The Group 8-containing film forming compositions comprise silylamide-containing precursors, particularly {Fe[N(SiMe)]}. At least part of the silylamide-containing precursor is deposited onto the substrate to from the Group 8-containing film.

Vapor deposition methods to form group 8-containing films

Methods of depositing Co-containing layers on substrates are disclosed. The vapor of a Co-containing film forming composition is introduced into a reactor having a substrate disposed therein. The Co-containing film forming compositions comprise a silylamide-containing precursor selected from Co[N(SiMe)](NMeEt), Co[N(SiMe)](NMeEt), or combinations thereof. At least part of the silylamide-containing precursor is deposited onto the substrate to form the Co-containing layer using a vapor deposition method.

Cobalt-containing film forming compositions, their synthesis, and use in film deposition

Vapor deposition methods of cobalt-containing films by using cobalt carbonyl nitrosyl are disclosed.

Method for forming cobalt containing films

Disclosed are titanium-tetrahydroaluminates precursors, their method of manufacture, and their use in the deposition of titanium-aluminum-containing films. The disclosed precursors have the formulae Ti(AlH)&#x2014;X, Ti(AlH)L and Ti(AlH)L. The disclosed precursors may be used to deposit pure titanium-aluminum (TiAl), titanium-aluminum nitride (TiAlN), titanium-aluminum carbide (TiAlC), titanium-aluminum carbonitride (TiAlCN), titanium-aluminum silicide ((TiAl)Si), titanium-aluminum siliconitride ((TiAl)SiN), titanium-aluminum boron ((TiAl)B), titanium-aluminum boron nitride ((TiAl)BN), or titanium-aluminum oxide (TiAlO). or any other titanium-aluminum-containing films. The titanium-aluminum-containing films may be deposited using the disclosed precursors in thermal and/or plasma-enhanced CVD, ALD, pulse CVD or any other type of depositions methods.

Titanium-aluminum alloy deposition with titanium-tetrahydroaluminate bimetallic molecules

Methods of forming titanium-containing layers on substrates are disclosed. In the disclosed methods, the vapor of a precursor compound having the formula Ti(MeCp)(OR), wherein R is selected from methyl, ethyl, or isopropyl is provided. The vapor is reacted with the substrate according to an atomic layer deposition process to form a titanium-containing complex on the surface of the substrate.

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Seoul, South Korea

Satoko Gatineau