Semiconductor Energy Laboratory Co., Ltd.

Satohiro Okamoto

Yasuyuki Arai

Atsushi Miyaguchi

Ikuko Kawamata

Yoshitaka Moriya

Hiromichi Godo

Yuta Endo

Junpei Sugao

Eriko Nishida

Mari Terashima

Noriaki Uto

Shunpei Yamazaki

Kiyoshi Kato

Atsushi Umezaki

Akihisa Shimomura

Shuhei Nagatsuka

Kunio Hosoya

Saishi Fujikawa

Masaki Koyama

Takafumi Mizoguchi

The display device includes: a flexible display panel including a display portion in which scanning lines and signal lines cross each other; a supporting portion for supporting an end portion of the flexible display panel; a signal line driver circuit for outputting a signal to the signal line, which is provided for the supporting portion; and a scanning line driver circuit for outputting a signal to the scanning line, which is provided for a flexible surface of the display panel in a direction which is perpendicular or substantially perpendicular to the supporting portion.

Display device

An object is to provide a semiconductor device including an oxide semiconductor in which miniaturization is achieved while favorable characteristics are maintained. The semiconductor includes an oxide semiconductor layer, a source electrode and a drain electrode in contact with the oxide semiconductor layer, a gate electrode overlapping with the oxide semiconductor layer, a gate insulating layer provided between the oxide semiconductor layer and the gate electrode, and an insulating layer provided in contact with the oxide semiconductor layer. A side surface of the oxide semiconductor layer is in contact with the source electrode or the drain electrode. An upper surface of the oxide semiconductor layer overlaps with the source electrode or the drain electrode with the insulating layer interposed between the oxide semiconductor layer and the source electrode or the drain electrode.

Semiconductor device

It is an object to provide a display panel and an electronic book which are manufactured with high yield and have high reliability. A display panel is provided which includes, a flexible display portion in which a scan line and a signal line intersect with each other over a substrate, a signal line driver circuit for outputting a first signal to the signal line adjacent to a first side of the flexible display portion over the substrate, and a scan line driver circuit for outputting a second signal to the scan line adjacent to a second side of the flexible display portion. In the display panel, the mechanical strength of a portion provided with the signal line driver circuit or the scan line driver circuit is improved as compared to the mechanical strength of other than the portion.

Display panel and electronic book

A new driving method of a display device that makes it possible to reduce power consumption and to improve display quality is proposed. A first gray scale is displayed in all pixels in a first initialization period, a second gray scale is displayed in all the pixels in a second initialization period, an objective image is displayed in a writing period, and the image is held in a holding period. Alternatively, an electrical history of a gray scale storage display element for displaying a number of gray scales is erased in the first initialization period and the second initialization period. Alternatively, a potential of a common electrode is changed in the first initialization period, the second initialization period, the writing period, and the holding period. Alternatively, a potential of a capacitor wiring is changed in synchronization with the potential of the common electrode.

Display device and driving method thereof

To provide a photoelectric conversion device whose characteristics are sufficiently improved. The photoelectric conversion device includes: a first electrode; a unit cell having a semiconductor layer exhibiting a first conductivity type, a semiconductor layer having an effect of photoelectric conversion, and a semiconductor layer exhibiting a second conductivity type; and a second electrode. In the semiconductor layer having an effect of photoelectric conversion, crystal grains each grain diameter of which is smaller than a thickness of the semiconductor layer having an effect of photoelectric conversion are aligned in the thickness direction of the semiconductor layer having an effect of photoelectric conversion from the semiconductor layer exhibiting the first conductivity type to the semiconductor layer exhibiting the second conductivity type.

Photoelectric conversion device and manufacturing method thereof

A semiconductor device is formed using a material which allows a sufficient reduction in off-state current of a transistor; for example, an oxide semiconductor material, which is a wide-gap semiconductor, is used. When a semiconductor material which allows a sufficient reduction in off-state current of a transistor is used, the semiconductor device can hold data for a long time. Transistors each including an oxide semiconductor in memory cells of the semiconductor device are connected in series; thus, a source electrode of the transistor including an oxide semiconductor in the memory cell and a drain electrode of the transistor including an oxide semiconductor in the adjacent memory cell can be connected to each other. Therefore, the area occupied by the memory cells can be reduced.

Semiconductor device and driving method of semiconductor device

Growing community of inventors

Kanagawa, Japan

Satohiro Okamoto