Samsung Electronics Co., Ltd.

Satoh Ryuichi

Kyu Sik Kim

Gae Hwang Lee

Yong Wan Jin

Kyung Bae Park

Kwang Hee Lee

Dong-Seok Leem

Chul Joon Heo

Tadao Yagi

Hong-seok Lee

Sung Heo

Gyeongsu Park

Dongjin Yun

Hyung-Ik Lee

Seong Heon Kim

A method of forming a layer including disposing a first target and a second target to face each other with a first space therebetween, disposing a substrate to face the first space, generating plasma between the first target and the second target to perform sputtering on the substrate, disposing a capture net between the substrate and the the first space, and capturing anions and/or electrons that propagate toward the substrate from the first space.

Sputtering apparatus and method thereof

Example embodiments relate to an organic photoelectronic device that includes a first electrode, a light-absorption layer on the first electrode and including a first p-type light-absorption material and a first n-type light-absorption material, a light-absorption auxiliary layer on the light-absorption layer and including a second p-type light-absorption material or a second n-type light-absorption material that have a smaller full width at half maximum (FWHM) than the FWHM of the light absorption layer, a charge auxiliary layer on the light-absorption auxiliary layer, and a second electrode on the charge auxiliary layer, and an image sensor including the same.

Organic photoelectronic device and image sensor

Image sensors include a color photo-sensing photoelectric conversion device, a first color filter and a second color filter disposed under the color photo-sensing photoelectric conversion device, a first photodiode and a second photodiode disposed under the first color filter and the second color filter, respectively, a first light guide member disposed between the first color filter and the first photodiode, and a second light guide member disposed between the second color filter and the second photodiode.

Image sensors having light guide members

Image sensor having light guide members

An optoelectronic device includes a first electrode and a second electrode facing each other, a photoelectric conversion layer between the first electrode and the second electrode, and a buffer layer between at least one of the photoelectric conversion layer and the first electrode, and the photoelectric conversion layer and the second electrode, the buffer layer including one of MoO(2.58&#x2266;x1&#x3c;3.0), ZnO(1.0&#x2266;x2&#x3c;2.0), TiO(1.5&#x2266;x3&#x3c;2.0), VO(1.5&#x2266;x4&#x3c;2.0), TaO(1.0&#x2266;x5&#x3c;2.5), WO(2.0&#x3c;x6&#x3c;3.0), and a combination thereof.

Optoelectronic device, and image sensor and electronic device including the same

Image sensors, and electronic devices including the same, include a first photo-sensing device sensing light in a full visible to near infrared ray region, a second photo-sensing device sensing light in a blue wavelength region, a third photo-sensing device sensing light in a red wavelength region, and a fourth photo-sensing device sensing light in a green wavelength region. At least one of the first photo-sensing device, the second photo-sensing device, the third photo-sensing device, and the fourth photo-sensing device includes a pair of light-transmitting electrodes facing each other, and a photoactive layer between the light-transmitting electrodes. The photoactive layer includes an organic light-absorbing material.

Image sensors and electronic devices including the same

Growing community of inventors

Numazu-si, Japan

Satoh Ryuichi