Sharp Kabushiki Kaisha Corporation

Satofumi Kinei

Takahiro Hashimoto

Shinji Kaneiwa

Masayuki Ohta

Noboru Oshima

Yoshinori Ohitsu

Hiroyuki Tsujii

A semiconductor laser element comprising: a clad layer of a first conductivity type; an active layer; a first clad layer of a second conductivity type; a ridge made of a second clad layer of the second conductivity type and a cap layer of the second conductivity type, which are layered on the first clad layer of the second conductivity type, in this order starting from the first clad layer side; a dielectric film formed on ridge sides other than a top portion of the ridge; and a metal electrode layer that covers the ridge, wherein the width of the bottom of the cap layer and the width of the top surface of the second clad layer are approximately equal.

Semiconductor laser element and manufacturing method for the same

On a mount surface portion of a semiconductor laser device, a first bonding layer is so formed that a first region near a light-emitting area is exposed. On a mount surface portion of a sub mount is formed a second bonding layer having a melting point Tlower than a melting point Tof the first bonding layer. The first and second bonding layers are heated in a mutually pressed state at a temperature T lower than the melting point Tof the first bonding layer but higher than the melting point Tof the second bonding layer (T&#x3e;T&#x3e;T) to bond the semiconductor laser device to the sub mount. When the semiconductor laser device is bonded to the sub mount, the first region serves as the non-bonding area.

Method for manufacturing semiconductor laser apparatus

There is provided a semiconductor laser device which is generally uniform in carrier concentration of a clad layer, almost free from strain, and less demanding for time and labor in its manufacturing, and which has stable characteristics. On an n-GaAs substrate, an n-type clad layer, an active layer, a p-type clad layer, and a cap layer are stacked one on another at a temperature of 700-750&#xb0; C. Widthwise both side portions of the cap layer as well as widthwise both side specified-depth portions of the p-type clad layer are removed by etching to form a ridge portion, and a current constriction layer is formed on widthwise both sides of the ridge portion. A flattening layer having a planar surface is formed on the current constriction layer and the cap layer by slow cooling LPE process at a temperature of 700&#xb0; C. or lower. On the flattening layer, a contact layer is formed by MOCVD process at a temperature of about 650&#xb0; C.

Growing community of inventors

Soraku-gun, Japan

Satofumi Kinei