Sony Corporation

Sony Group Corporation

Sony Semiconductor Solutions Corporation

Satoe Miyata

Itaru Oshiyama

Shinya Yamakawa

The present technology relates to an image pickup device and an electronic apparatus that are configured to enhance characteristics. A solid-state image pickup device includes a photoelectric conversion section that is arranged on a semiconductor substrate and configured to photoelectrically convert an incident light, a moth-eye section that includes recesses and projections formed on a surface on a light incident side in the semiconductor substrate and has, when a cross section approximately parallel to a direction toward the photoelectric conversion section from the light incident side is viewed, a recessed portion protruding toward the side of the photoelectric conversion section, the recessed portion having a curvature or a polygonal shape, and a region that is arranged adjacent to and opposite to the photoelectric conversion section of the moth-eye section and has a refractive index different from a refractive index of the semiconductor substrate.

Image pickup device and electronic apparatus

The present disclosure relates to a semiconductor device and an electronic apparatus capable of reducing a leak current of a PN junction region. In a Si substrate, an N+ region is formed in a P-type Well (P_Well region). A depletion layer is formed in the circumference of a boundary (metallurgic boundary of a PN junction) between the P_Well region and the N+ region. On the surface of the Si substrate, a fixed charge layer having positive fixed charge is formed on the N+ region to be spanned to the depletion layer. The present disclosure is applicable to a CMOS solid-state imaging device used in an imaging apparatus such as a camera.

Semiconductor device having negative fixed charge, positive fixed charge and electronic apparatus capable of reducing a leaking current of a PN junction region

A solid-state imaging device includes: a semiconductor substrate; and a plurality of pixels arrayed two-dimensionally in the semiconductor substrate, each of the pixels having a photoelectric conversion element that performs photoelectric conversion, the photoelectric conversion element having a first impurity region, formed in the semiconductor substrate, containing an impurity of a first conductivity type; a second impurity region formed in the semiconductor substrate so as to be in contact with the first impurity region, containing an impurity of a second conductivity type different from the first conductivity type; and a PN junction portion in which the first impurity region and the second impurity region are in contact with each other, formed in a protruding shape projecting toward a surface side of the semiconductor substrate.

Growing community of inventors

Tokyo, Japan

Satoe Miyata