Applied Materials, Inc.

Solar Junction Corporation

Sathya Chary

Zhiyuan Ye

Xuebin Li

Ferran Suarez

Ewelina Natalia Lucow

Lan Zhang

Yi-Chiau Huang

Joe Margetis

Saurabh Chopra

Sabeur Siala

Chen-Ying Wu

Ali Torabi

Embodiments of the present invention generally relate to methods of epitaxially growing boron-containing structures. In an embodiment, a method of depositing a structure comprising boron and a Group IV element on a substrate is provided. The method includes heating the substrate at a temperature of about 300° C. or more within a chamber, the substrate having a dielectric material and a single crystal formed thereon. The method further includes flowing a first process gas and a second process gas into the chamber, wherein: the first process gas comprises at least one boron-containing gas comprising a haloborane; and the second process gas comprises at least one Group IV element-containing gas. The method further includes exposing the substrate to the first and second process gases to epitaxially and selectively deposit the structure comprising boron and the Group IV element on the single crystal.

Epitaxial methods including a haloborane formula for growing boron-containing structures having increased boron concentrations

A method and apparatus for improving film growth uniformity on a semiconductor substrate. The film growth uniformity is improved by adjusting the amount of power provided to the substrate by spot heaters as the substrate is rotated. Therefore, the amount of power provided to the substrate by the spot heaters changes as the portion of the substrate being heated by spot heater changes. The change in power provided by the spot heater is dependent on a temperature correction factor applied by the controller.

Dynamic and localized temperature control for epitaxial deposition reactors

Embodiments described herein relate to a method of epitaxial deposition of p-channel metal oxide semiconductor (MMOS) source/drain regions within horizontal gate all around (hGAA) device structures. Combinations of precursors are described herein, which grow of the source/drain regions on predominantly <100> surfaces with reduced or negligible growth on <110> surfaces. Therefore, growth of the source/drain regions is predominantly located on the top surface of a substrate instead of the alternating layers of the hGAA structure. The precursor combinations include a silicon containing precursor, a germanium containing precursor, and a boron containing precursor. At least one of the precursors further includes chlorine.

Anisotropic sige:b epitaxial film growth for gate all around transistor

This disclosure relates to semiconductor devices and methods for fabricating semiconductor devices. Particularly, the disclosure relates to back-contact-only multijunction solar cells and the process flows for making such solar cells, including a wet etch process that removes semiconductor materials non-selectively without major differences in etch rates between heteroepitaxial III-V semiconductor layers.

Via etch method for back contact multijunction solar cells

Photovoltaic cells, methods for fabricating surface mount multijunction photovoltaic cells, methods for assembling solar panels, and solar panels comprising photovoltaic cells are disclosed. The surface mount multijunction photovoltaic cells include through-wafer-vias for interconnecting the front surface epitaxial layer to a contact pad on the back surface. The through-wafer-vias are formed using a wet etch process that removes semiconductor materials non-selectively without major differences in etch rates between heteroepitaxial III-V semiconductor layers.

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San Francisco, CA, United States of America

Sathya Chary