Praxair Technology, Inc.

Koninklijke Philips Corporation N.v.

Lumileds LLC

Sateria Salim

Arthur Edward Holmer

Rafael Ignacio Aldaz

Patrick Nolan Grillot

Michael M Litwin

John B Goddard

Eugene I Chen

James Philip Natwora, Jr

One or more regions of graded composition are included in a III-P light emitting device, to reduce the Vassociated with interfaces in the device. In accordance with embodiments of the invention, a semiconductor structure comprises a III-P light emitting layer disposed between an n-type region and a p-type region. A graded region is disposed between the p-type region and a GaP window layer. The aluminum composition is graded in the graded region. The graded region may have a thickness of at least 150 nm. In some embodiments, in addition to or instead of a graded region between the p-type region and the GaP window layer, the aluminum composition is graded in a graded region disposed between an etch stop layer and the n-type region.

Semiconductor light emitting device including graded region

A process for removing impurities such as oxygen, nitrogen, carbon monoxide, hydrogen, water (moisture), carbon dioxide, hydrogen chloride, methane and trace metals from crude hydrogen bromide and the apparatus for purifying such crude hydrogen bromide.

Process and apparatus for purifying hydrogen bromide

The method measures hydrogen sulfide concentrations in hydride gases in a sealed vessel. The sealed vessel has a gas inlet to receive a stream of hydride gas, a gas outlet to remove the stream of hydride gas and a metal acetate substrate. The stream of hydride gas contains a concentration of hydrogen sulfide gas. Introducing the stream of hydride gas through the gas inlet contacts the acetate substrate with the stream of hydride gas. Reacting the hydrogen sulfide gas contained in the stream of hydride gas with the acetate substrate modifies optical properties of the acetate substrate. Then measuring the optical properties of the acetate substrate determines the concentration of the hydrogen sulfide gas contained in the stream of hydride gas.

Analysis of hydrogen sulfide in hydride gases

This invention is directed to a method for producing UHP tungsten hexafluoride by introducing an amount of crude tungsten hexafluoride to an evaporating process for separation into an amount of tungsten hexafluoride-containing volatile impurities and an amount of non-volatile metallic impurities; passing the amount of tungsten hexafluoride-containing volatile residue to a gas phase adsorption process for separation into an amount of semi-crude tungsten hexafluoride product and an amount of hydrogen fluoride non-volatile residue; and passing the amount of semi-crude tungsten hexafluoride product to a sparging system using UHP helium for separation into a non-volatile UHP tungsten hexafluoride product.

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San Jose, CA, United States of America

Sateria Salim