Kepler Computing Inc.

Intel Corporation

Cornell University

General Electric Company

Intel Corproation

Sasikanth Manipatruni

Amrita Mathuriya

Rajeev Kumar Dokania

Tanay Gosavi

Ian A Young

Noriyuki Sato

Rafael Rios

Ikenna Odinaka

Dmitri E Nikonov

Ramamoorthy Ramesh

Niloy Mukherjee

Debo Olaosebikan

Gaurav Thareja

Somilkumar J Rathi

Robert Menezes

Mauricio Manfrini

Chia-Ching Lin

Pratyush Pandey

Kaan Oguz

Ramesh Ramamoorthy

Ram K Krishnamurthy

Christopher B Wilkerson

Abhishek A Sharma

Raghavan Kumar

Gregory Kengho Chen

Phil Knag

Huseyin Ekin Sumbul

Nabil Imam

Christopher J Wiegand

Yuan-Sheng Fang

Jason Y Wu

Benjamin Buford

Kevin O'Brien

Darshak Doshi

Uygar E Avci

Angeline Smith

Michal Lipson

Tofizur Rahman

Anurag Chaudhry

James David Clarkson

Gabriel Antonio Paulius Velarde

Huichu Liu

Gary Allen

Neal Reynolds

Fnu Atiquzzaman

Tanay Karnik

Victor W Lee

Mustansir Yunus Mukadam

Brian S Doyle

Kelin J Kuhn

Daniel Henry Morris

John J Plombon

Kaushik Vaidyanathan

Jack T Kavalieros

Van H Le

Jasmeet S Chawla

Raseong Kim

Zeying Ren

Debraj Guhabiswas

Ravi Pillarisetty

Shawna M Liff

Debendra Mallik

Biswajeet Guha

Seiyon Kim

Hui Jae Yoo

Vivek K Singh

John C Johnson

Sou-Chi Chang

Patrick R Morrow

James S Clarke

Kevin Lai Lin

Robert L Bristol

David J Michalak

Nazila Haratipour

Chytra Pawashe

Pramod Kolar

Rajeev K Dokania

James Pellegren

Kyle Preston

Tahir Ghani

Mark L Doczy

Hong Wang

Charles C Kuo

Christopher Judson Hardy

Sreenivas Subramoney

Long L Chen

Yih Wang

Rajashree Raji Baskaran

Kanwaljit Singh

Jayesh Gaur

Nafees Kabir

Justin Brockman

George I Bourianoff

Md Tofizur Rahman

Qianfan Xu

Alyssa B Apsel

Darrell G Schlom

Michael Christenson

Paul McEuen

Ishwar Bhati

The disclosed technology generally relates to ferroelectric materials and semiconductor devices, and more particularly to semiconductor memory devices incorporating doped polar materials. In one aspect, a semiconductor device comprises a capacitor which in turn comprises a polar layer comprising a base polar material doped with a dopant. The base polar material includes one or more metal elements and one or both of oxygen or nitrogen. The dopant comprises a metal element that is different from the one or more metal elements and is present at a concentration such that a ferroelectric switching voltage of the capacitor is different from that of the capacitor having the base polar material without being doped with the dopant by more than about 100 mV. The capacitor stack additionally comprises first and second crystalline conductive oxide electrodes on opposing sides of the polar layer. The capacitor stack further comprises first and second barrier metal layers on respective ones of the first and second crystalline conductive oxide electrodes on opposing sides of the polar layer.

Doped polar layers and semiconductor device incorporating same

Asynchronous full-adder circuit is described. The full-adder includes majority and/or minority gates some of which receive two first inputs (A.t, A.f), two second inputs (B.t, B.f), two carry inputs (Cin.t, Cin.f), third acknowledgement input (Cout.e), and fourth acknowledgement input (Sum.e), and generate controls to control gates of transistors, wherein the transistors are coupled to generate two carry outputs (Cout.t, Cout.e), two sum outputs (Sum.t, Sum.e), first acknowledgement output (A.e), second acknowledgement output (B.e), and third acknowledgement output (Cin.e). The majority and/or minority gates comprise CMOS gates or multi-input capacitive circuitries. The multi-input capacitive circuitries include capacitive structures that may comprise linear dielectric, paraelectric dielectric, or ferroelectric dielectric. The capacitors can be planar or non-planar. The capacitors may be stacked vertically to reduce footprint of the asynchronous full-adder circuit. Asynchronous full-adders coupled in series is used to implement a carry-ripple adder.

Asynchronous carry-ripple adder with majority or minority gates

Magnetoelectric spin-orbit logic (MESO) devices comprise a magnetoelectric switch capacitor coupled to a spin-orbit coupling structure. The logic state of the MESO device is represented by the magnetization orientation of the ferromagnet of the magnetoelectric switch capacitor and the spin-orbit coupling structure converts the magnetization orientation of the ferromagnet to an output current. MESO devices in which all or at least some of the constituent layers of the device are perovskite materials can provide advantages such as improved control over the manufacturing of MESO devices and high quality interfaces between MESO layers due to the lattice matching of perovskite materials.

Perovskite-based magnetoelectric spin-orbit logic devices

An integration process including an etch stop layer for high density memory and logic applications and methods of fabrication are described. While various examples are described with reference to FeRAM, capacitive structures formed herein can be used for any application where a capacitor is desired. For instance, the capacitive structure can be used for fabricating ferroelectric based or paraelectric based majority gate, minority gate, and/or threshold gate.

Integrating embedded memory with logic interconnects

A method of fabricating a device comprises forming a multi-layer stack above a first substrate, where multi-layer stack includes a non-linear polar material. In at least one embodiment, method further includes forming a first conductive layer on multi-layer stack and annealing multi-layer stack. A transistor is formed above a second substrate. In at least one embodiment, method also includes forming a second conductive layer above electrode structure and bonding first conductive layer with second conductive layer. After bonding, method includes removing at least a portion of first substrate patterning multi-layer stack to form a memory device.

Method of forming capacitors through wafer bonding

Described is a low power, high-density a 1T-1C (one transistor and one capacitor) memory bit-cell, wherein the capacitor comprises a pillar structure having ferroelectric material (perovskite, improper ferroelectric, or hexagonal ferroelectric) and conductive oxides as electrodes. In various embodiments, one layer of the conductive oxide electrode wraps around the pillar capacitor, and forms the outer electrode of the pillar capacitor. The core of the pillar capacitor can take various forms.

High-density low voltage non-volatile memory with unidirectional plate-line and bit-line and pillar capacitor

A low power adder uses a non-linear polar capacitor to retain charge with fewer transistors than traditional CMOS sequential circuits. The non-linear polar capacitor includes ferroelectric material, paraelectric material, or non-linear dielectric. The adder may include minority gates and/or majority gates. Input signals are received by respective terminals of capacitors having non-linear polar material. The other terminals of these capacitors are coupled to a node where the majority function takes place for the inputs.

Ripple carry adder with ferroelectric or paraelectric wide-input minority or majority gates

A logic gate includes a first capacitor to receive a first input, the first capacitor coupled to a node and a first diode structure coupled to the first input and the node. The logic gate future includes a second capacitor to receive a second input, the second capacitor coupled to the node and a second diode structure coupled to the second input and the node. The logic gate further includes a third capacitor to receive a third input, wherein the third capacitor is coupled to the node and a third diode structure coupled to the third input and the node.

Diode connected non-linear input capacitors based majority gate

Method of integrating a capacitor including a non-linear polar material with a transistor through wafer bonding

A device structure comprises a first conductive interconnect, an electrode structure on the first conductive interconnect, an etch stop layer laterally surrounding the electrode structure; a plurality of memory devices above the electrode structure, where individual ones of the plurality of memory devices comprise a dielectric layer comprising a perovskite material. The device structure further comprises a plate electrode coupled between the plurality of memory devices and the electrode structure, where the plate electrode is in direct contact with a respective lower most conductive layer of the individual ones of the plurality of memory devices. The device structure further includes an insulative hydrogen barrier layer on at least a sidewall of the individual ones of the plurality of memory devices; and a plurality of via electrodes, wherein individual ones of the plurality of via electrodes are on a respective one of the individual ones of the plurality of memory devices.

Gate coupled non-linear polar material based capacitors for memory and logic

A multiplier cell is derived from a 1-bit full adder and an AND gate. The 1-bit full adder is derived from majority and/or minority gates. The majority and/or minority gates include non-linear polar material (e.g., ferroelectric or paraelectric material). A reset mechanism is provided to reset the nodes across the non-linear polar material. The multiplier cell is a hybrid of majority and/or minority gates and complementary metal oxide semiconductor (CMOS) based inverters and/or buffers. The adder uses a non-linear polar capacitor to retain charge with fewer transistors than traditional CMOS sequential circuits. The non-linear polar capacitor includes ferroelectric material, paraelectric material, or non-linear dielectric. Input signals are received by respective terminals of capacitors having non-linear polar material. The other terminals of these capacitors are coupled to a node where the majority function takes place for the inputs.

Non-linear polar material based low power multiplier with transmission-gate based reset mechanism

Asynchronous full-adder with majority or minority gates to generate carry-out true output

A pocket integration for high density memory and logic applications and methods of fabrication are described. While various embodiments are described with reference to FeRAM, capacitive structures formed herein can be used for any application where a capacitor is desired. For example, the capacitive structure can be used for fabricating ferroelectric based or paraelectric based majority gate, minority gate, and/or threshold gate.

Method of fabricating memory devices using pocket integration

Described herein is a read and write scheme to improve memory reliability. In at least one embodiment, one or more circuitries are provided to perform logic 0 write operation in a first phase and logic 1 write operation in a second phase for a plurality of bit-cells controlled by a word-line. In at least one embodiment, an individual bit-cell comprises a transistor having a gate terminal coupled to the word-line; and a capacitor including non-linear polar material, wherein the capacitor has a first terminal coupled to a plate-line and a second terminal coupled to the transistor, wherein a source or drain terminal of the transistor is coupled to a bit-line.

Time decoupled write operations for non-linear polar material based memory

Asynchronous full-adder with majority or minority gates to generate carry-out false output

Growing community of inventors

Portland, OR, United States of America

Sasikanth Manipatruni