Globalwafers Co., Ltd.

Applied Materials, Inc.

Sunedison Semiconductor Limited (uen201334164h)

Sunedison Semiconductor Limited

Sasha Joseph Kweskin

Gang Wang

Charles Robert Lottes

Shankar Venkataraman

Henry Frank Erk

Paul Edward Gee

Jeffrey Louis Libbert

Kedar Sapre

Mayank Bulsara

Hiroshi Hamana

Kadar Sapre

Charles R Lottes

A method is provided for preparing a semiconductor-on-insulator structure comprising a silicon nitride layer deposited by plasma deposition.

Semiconductor on insulator structure comprising a plasma nitride layer and method of manufacture thereof

A method is provided for preparing a semiconductor-on-insulator structure comprising a step of high pressure bonding.

Method of manufacturing a semiconductor on insulator structure by a pressurized bond treatment

A method is provided for preparing semiconductor structure, e.g., a semiconductor on insulator structure, comprising a device layer having a smooth surface. The method provided involves smoothing a semiconductor substrate surface by making use of stress enhanced surface diffusion at elevated temperatures. The purpose of this method is to reach atomic scale surface smoothness (for example, smoothness in the range of between 1.0 and 1.5 angstroms as measured according to root mean square over a 30 um&#xd7;30 um AFM measurement), which is required in advanced (sub 28 nm) CMOS device fabrication.

Manufacturing method of smoothing a semiconductor surface

A method is provided for preparing a semiconductor-on-insulator structure comprising a multilayer dielectric layer.

Method of manufacture of a semiconductor on insulator structure

A method is provided for preparing a semiconductor-on-insulator structure comprising a flowable insulating layer or a reflowable insulating layer.

Semiconductor on insulator structure comprising a low temperature flowable oxide layer and method of manufacture thereof

A method is provided for preparing a semiconductor-on-insulator structure comprising a silicon oxynitride layer having a gradient oxygen concentration.

Semiconductor on insulator structure comprising a plasma oxide layer and method of manufacture thereof

A method is provided for preparing a semiconductor-on-insulator structure comprising a sacrificial layer.

Semiconductor on insulator structure comprising a sacrificial layer and method of manufacture thereof

Aspects of the disclosure pertain to methods of preferentially filling narrow trenches with silicon oxide while not completely filling wider trenches and/or open areas. In embodiments, dielectric layers are deposited by flowing a silicon-containing precursor and ozone into a processing chamber such that a relatively dense first portion of a silicon oxide layer followed by a more porous (and more rapidly etched) second portion of the silicon oxide layer. Narrow trenches are filled with dense material whereas open areas are covered with a layer of dense material and more porous material. Dielectric material in wider trenches may be removed at this point with a wet etch while the dense material in narrow trenches is retained.

Preferential dielectric gapfill

Aspects of the disclosure pertain to methods of depositing dielectric layers on patterned substrates. In embodiments, dielectric layers are deposited by flowing BIS(DIETHYLAMINO)SILANE (BDEAS), ozone and molecular oxygen into a processing chamber such that a relatively uniform dielectric growth rate is achieved across the patterned substrate surface. The deposition of dielectric layers grown according to embodiments may have a reduced dependence on pattern density while still being suitable for non-sacrificial applications.

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St. Louis, MO, United States of America

Sasha Joseph Kweskin