Carl Zeiss Smt Gmbh

Asml Netherlands B.v.

Sascha Migura

Hans-Juergen Mann

Aurelian Dodoc

Jan Bernard Plechelmus Van Schoot

Hans-Juergen Rostalski

Thomas Schicketanz

Hartmut Enkisch

Hans-Jürgen Mann

Christoph Zaczek

Hans-Jochen Paul

Danny Chan

Gerhard Braun

Vladimir Kamenov

Stephan Muellender

Wilfried Clauss

Franz-Josef Stickel

Oliver Natt

Bernhard Kneer

Gisela Von Blanckenhagen

Joern Weber

Martin Rocktaeschel

Roland Loercher

A lithographic apparatus including a support structure constructed to support a mask having a patterned area which is capable of imparting an EUV radiation beam with a pattern in its cross-section to form a patterned radiation beam, wherein the support structure is movable in a scanning direction, a substrate table constructed to hold a substrate, wherein the substrate table is movable in the scanning direction, and a projection system configured to project the patterned radiation beam onto an exposure region of the substrate, wherein the projection system has a demagnification in the scanning direction which is greater than a demagnification in a second direction which is perpendicular to the scanning direction and wherein the demagnification in the second direction is greater than 4&#xd7;.

Lithographic apparatus and method

A mirror including a substrate and a reflective coating that includes a first group of layers and a second group of layers arranged between the substrate and the first group of layers. Both the first and second groups of layers include a plurality of alternating first material layers and second material layers, arranged one above another. The refractive index of the first material for radiation in the range of 5-30 nm is greater than the refractive index of the second material in that wavelength range. The first group of layers is configured to have a number of layers that is greater than 20, such that, upon irradiation with radiation having a wavelength in the range of 5-30 nm, less than 20% of the radiation reaches the second group of layers, which has a layer thickness variation for correcting the surface form of the mirror.

Mirror for use in a microlithography projection exposure apparatus

A mirror (') for the EUV wavelength range and having a substrate (S) and a layer arrangement, wherein the layer arrangement includes at least one surface layer system (P&#x2032;&#x2033;) consisting of a periodic sequence of at least two periods (P) of individual layers, wherein the periods (P) include two individual layers composed of different materials for a high refractive index layer (H&#x2032;&#x2033;) and a low refractive index layer (L&#x2032;&#x2033;), wherein the layer arrangement includes at least one surface protecting layer (SPL, L) or at least one surface protecting layer system (SPLS) having a thickness of greater than 20 nm, and preferably greater than 50 nm.

Mirror for the EUV wavelength range, substrate for such a mirror, projection objective for microlithography comprising such a mirror or such a substrate, and projection exposure apparatus for microlithography comprising such a projection objective

An imaging optical unit () serves for imaging an object field () in an object plane () into an image field () in an image plane (). The imaging optical unit () has a plurality of components (Mto M, GI) which guide imaging light (). The imaging optical unit () is embodied as a pupil-obscured system. The imaging optical unit () has at least one mirror (GI) for grazing incidence of the imaging light (). The result is an imaging optical unit having a handleable combination of low imaging aberrations and compact construction.

Imaging optical unit and projection exposure apparatus for projection lithography comprising such an imaging optical unit

An optical imaging system serving for imaging a pattern arranged in an object plane of the imaging system into an image plane of the imaging system with the aid of electromagnetic radiation from a wavelength range around a main wavelength &#x3bb;has a multiplicity of mirrors. Each mirror has a mirror surface having a reflective layer arrangement having a sequence of individual layers.

Reflective optical imaging system

An optical system is disclosed that includes a plurality of elements arranged to image radiation at a wavelength &#x3bb; from an object field in an object surface to an image field in an image surface. The elements include mirror elements have a reflective surface formed by a reflective coating positioned at a path of radiation. At least one of the mirror elements has a rotationally asymmetrical reflective surface deviating from a best-fit rotationally symmetric reflective surface by about &#x3bb; or more at one or more locations. The elements include an apodization correction element effective to correct a spatial intensity distribution in an exit pupil of the optical system relative to the optical system without the apodization correcting element. The apodization correction element can be effective to increase symmetry of the spatial intensity distribution in the exit pupil relative to the optical system without the apodization correcting element.

Projection objective having mirror elements with reflective coatings

To improve the mask of an EUV lithography apparatus in view of its high reflectivity, a reflective mask is suggested for EUV lithography having a reflective multilayer system on a substrate configured for a working wavelength in the EUV range and having stacks with layers of at least two materials with different real parts of the refractive index at the working wavelength, wherein the multilayer system (V) is configured such that, as it is irradiated with EUV radiation at a fixed wavelength and an angle interval between the smallest and the largest angle of incidence of up to 21&#xb0;, the apodization is less than 30%.

Reflective mask for EUV lithography

An optical system is disclosed that includes a plurality of elements arranged to image radiation at a wavelength &#x3bb; from an object field in an object surface to an image field in an image surface. The elements include mirror elements having a reflective surface formed by a reflective coating positioned at a path of radiation. At least one of the mirror elements has a rotationally asymmetrical reflective surface deviating from a best-fit rotationally symmetric reflective surface by about &#x3bb; or more at one or more locations. The elements include an apodization correction element effective to correct a spatial intensity distribution in an exit pupil of the optical system relative to the optical system without the apodization correcting element. The apodization correction element can be effective to increase symmetry of the spatial intensity distribution in the exit pupil relative to the optical system without the apodization correcting element.

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Aalen-Unterrombach, Germany

Sascha Migura