Skhynix Inc.

Hynix Semiconductor Inc.

Sarohan Park

Ju Ry Song

Jung Hyung Lee

Eun-Ha Lee

Sang Hee Jung

Ji Young Im

In a method of forming patterns, first and second upper reverse patterns are formed on a lower reverse layer. A buffer layer is formed to fill first opening portions provided by the first upper reverse pattern. A shield pattern is formed to cover a second region of the buffer layer. An etching process is performed using the shield pattern and the first upper reverse pattern as an etching mask to form first lower reverse patterns providing second openings overlapping first openings, a buffer layer pattern and a second lower reverse pattern overlapping the shield pattern. A hard mask layer is formed and etched to separate hard mask layer first patterns filling the first and second openings. An etching process is performed using the hard mask layer first patterns and the second upper reverse patterns as etching masks to form third lower reverse patterns overlapping the second upper reverse pattern.

Method of forming patterns using reverse patterns

A method includes forming a hard mask layer over an etch target layer that extends across first and second regions, forming a sacrificial layer pattern over the hard mask layer of the first region, removing the sacrificial layer pattern after forming a spacer pattern on side walls thereof, selectively etching the hard mask layer of the first region by using the spacer pattern as an etch barrier while protecting the hard mask layer of the second region from being etched, removing the spacer pattern, forming a cut mask pattern over the hard mask layer of the first and second regions, etching the hard mask layer of the first and second regions by using the cut mask pattern as an etch barrier, removing the cut mask pattern, and forming patterns in the first and second regions respectively by using the hard mask layer of the first and second regions as an etch barrier and etching the etch target layer.

Method for forming fine pattern

Growing community of inventors

Gyeonggi-do, South Korea

Sarohan Park