Seagate Technology Incorporated

Sarbeswar Sahoo

Michael C Kautzky

Tong Zhao

Yuhang Cheng

Jie Gong

Justin Glen Brons

Hui Brickner

Sethuraman Jayashankar

Michael Allen Seigler

James Gary Wessel

Scott Michael Franzen

John Charles Duda

Kurt W Wierman

Ed F Rejda

Xiaoyue Huang

Martin Giles Blaber

Tae-Woo Lee

Steven Carl Riemer

Edwin F Rejda

Mark Thomas Kief

YongJun Zhao

Ibro Tabakovic

Steve C Riemer

Vijay Karthik Sankar

Declan Macken

Mourad Benakli

Kirill A Rivkin

Werner Scholz

Amit Vasant Itagi

Joel William Hoehn

Raul Horacio Andruet

Brian William Karr

David Chris Seets

Christopher Loren Platt

Mei-Ling Wu

Michael Christopher Kautzky

Devices having an air bearing surface (ABS), the device including a near field transducer, the near field transducer having a peg and a disc, the peg having a region adjacent the ABS, the peg including a plasmonic material selected from gold (Au), silver (Ag), copper (Cu), ruthenium (Ru), rhodium (Rh), aluminum (Al), or combinations thereof; and at least one other secondary atom selected from germanium (Ge), tellurium (Te), aluminum (Al), antimony (Sb), tin (Sn), mercury (Hg), indium (In), zinc (Zn), iron (Fe), copper (Cu), manganese (Mn), silver (Ag), chromium (Cr), cobalt (Co), and combinations thereof, wherein a concentration of the secondary atom is higher at the region of the peg adjacent the ABS than a concentration of the secondary atom throughout the bulk of the peg. Methods of forming NFTs are also disclosed.

Near-field transducer having secondary atom higher concentration at bottom of the peg

A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.

Materials for near field transducers and near field transducers containing same

A method of forming a near field transducer (NFT), the method including the steps of depositing a primary material; and implanting a secondary element, wherein both the primary material and the secondary element are chosen such that the primary material is densified via implantation of the secondary element.

Methods of forming near field transducers and near field transducers formed thereby

A device including a near field transducer, the near field transducer including gold (Au), silver (Ag), copper (Cu), or aluminum (Al), and at least two other secondary atoms, the at least two other secondary atoms selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), manganese (Mn), tellurium (Te), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), germanium (Ge), hydrogen (H), iodine (I), rubidium (Rb), selenium (Se), terbium (Tb), nitrogen (N), oxygen (O), carbon (C), antimony (Sb), gadolinium (Gd), samarium (Sm), thallium (Tl), cadmium (Cd), neodymium (Nd), phosphorus (P), lead (Pb), hafnium (Hf), niobium (Nb), erbium (Er), zinc (Zn), magnesium (Mg), palladium (Pd), vanadium (V), zinc (Zn), chromium (Cr), iron (Fe), lithium (Li), nickel (Ni), platinum (Pt), sodium (Na), strontium (Sr), calcium (Ca), yttrium (Y), thorium (Th), beryllium (Be), thulium (Tm), erbium (Er), ytterbium (Yb), promethium (Pm), neodymium (Nd cobalt (Co), cerium (Ce), lanthanum (La), praseodymium (Pr), or combinations thereof.

Materials for near field transducers, near field tranducers containing same, and methods of forming

Devices that include a write pole; a near field transducer (NFT) that includes a peg and a disk, wherein the peg is at the ABS of the device; and a diffusion barrier layer positioned between the write pole and the peg of the NFT, the diffusion barrier layer including metals, nitrides, oxides, carbides, silicides, or amorphous material.

Devices including a diffusion barrier layer

Devices having an air bearing surface (ABS), the devices including a write pole; a near field transducer (NFT) that includes a peg and a disc, wherein the peg is at the ABS of the device; a heat sink positioned adjacent the disc of the NFT; a dielectric gap positioned adjacent the peg of the NFT at the ABS of the device; and a conformal diffusion barrier layer positioned between the write pole and the dielectric gap, the disc, and the heat sink, wherein the conformal diffusion barrier layer forms at least one angle that is not greater than 135&#xb0;.

Near field transducer having secondary atom higher concentration at bottom of the peg

Devices that include a near field transducer (NFT) including a crystalline plasmonic material having crystal grains and grain boundaries; and nanoparticles disposed in the crystal grains, on the grain boundaries, or some combination thereof, wherein the nanoparticles are oxides of, lanthanum (La), barium (Ba), strontium (Sr), erbium (Er), hafnium (Hf), germanium (Ge), or combinations thereof; nitrides of zirconium (Zr), niobium (Nb), or combinations thereof; or carbides of silicon (Si), aluminum (Al), boron (B), zirconium (Zr), tungsten (W), titanium (Ti), niobium (Nb), or combinations thereof.

Devices including a near field transducer (NFT) with nanoparticles

Devices that include a near field transducer (NFT), the NFT having a disc and a peg, and the peg having five surfaces thereof; and at least one adhesion layer positioned on at least one of the five surfaces of the peg, the adhesion layer including one or more of the following: yttrium (Y), tin (Sn), iron (Fe), copper (Cu), carbon (C), holmium (Ho), gallium (Ga), silver (Ag), ytterbium (Yb), chromium (Cr), tantalum (Ta), iridium (Ir), zirconium (Zr), yttrium (Y), scandium (Sc), cobalt (Co), silicon (Si), nickel (Ni), molybdenum (Mo), niobium (Nb), palladium (Pd), titanium (Ti), rhenium (Re), osmium (Os), platinum (Pt), aluminum (Al), ruthenium (Ru), rhodium (Rh), vanadium (V), germanium (Ge), tin (Sn), magnesium (Mg), iron (Fe), copper (Cu), tungsten (W), hafnium (Hf), carbon (C), boron (B), holmium (Ho), antimony (Sb), gallium (Ga), manganese (Mn), silver (Ag), indium (In), bismuth (Bi), zinc (Zn), ytterbium (Yb), and combinations thereof.

Devices including a near field transducer and at least one associated adhesion layer

Near-field transducer having at least one secondary atom

Disclosed are devices that include a near field transducer (NFT), the NFT having a peg and a disc and the peg including peg material and at least one associated amorphous blocker layer, wherein the amorphous blocker layer includes an amorphous metal alloy and the amorphous blocker layer is within the peg material, on one or more surfaces of the peg material, or both.

Devices including a NFT having at least one amorphous alloy layer

A method including depositing a plasmonic material at a temperature of at least 150&#xb0; C.; and forming at least a peg of a near field transducer (NFT) from the deposited plasmonic material.

Methods of forming materials for at least a portion of a NFT and NFTs formed using the same

Growing community of inventors

Shakopee, MN, United States of America

Sarbeswar Sahoo