Intel Corporation

Saravanan Sethuraman

Kuljit Singh Bains

Chang Kian Tan

Bok Eng Cheah

Jackson Chung Peng Kong

Jenny Shio Yin Ong

Seok Ling Lim

Ru Yin Ng

Tonia M Rose

A differential Data Strobe (DQS) signal is used to transmit and receive Cyclic Redundancy Check (CRC) between a host memory controller and a memory module. The differential DQS strobe signal is trained before it is used for transactions. The training is performed by sending and receiving a CRC pattern on the differential DQS strobe signal between the host memory controller and a buffer in the memory module.

Method and apparatus to perform cyclic redundancy check training in a memory module

An apparatus is described. The apparatus includes a memory controller having a network interface and a channel interface. The channel interface is to send read, write and refresh commands into a region of a memory. The network interface is to receive memory access requests from a network, wherein the memory requests target the region of the memory. The memory requests are sent into the network by one or more host interfaces. The memory controller has bank refresh logic circuitry. The memory controller has signaling logic circuitry to send a back pressure signal to the one or more host interfaces. The back pressure signal identifies a bank of the region of the memory that is about to be refreshed by the bank refresh logic circuitry. The back pressure signal is to inform the one or more host interfaces that any memory requests that target the bank will not be serviced by the region of memory before the bank begins to be refreshed.

Per bank refresh hazard avoidance for large scale memory

Per channel thermal management techniques are described herein. In one example, a memory controller receives channel temperature information for one or more channels of one or more dies in the stack. The memory controller can then throttle commands at a channel-level based on the channel temperature information. In one example, row commands and column commands to a channel are throttled at independent rates based on the channel temperature information. In one example, a row command throttling rate or column command throttling rate is based on a ratio of alternating on-time to off time of throttling signals, or a window of time in which commands are enabled or disabled to a channel. In one example, the row and column command throttling signals can be staggered across channels or pseudo channels.

Per channel thermal management techniques for stacked memory

Semiconductor packages, and methods for making the semiconductor packages, having an interposer structure with one or more interposer and an extension platform, which has an opening for placing the interposer, and the space between the interposer and the extension platform is filled with a polymeric material to form a unitary interposer-extension platform composite structure. A stacked structure may be formed by at least a first semiconductor chip coupled to the interposer and at least a second semiconductor chip coupled to the extension platform, and at least one bridge extending over the space that electrically couples the extension platform and the interposer. The extension platform may include a recess step section that may accommodate a plurality of passive devices to reduced power delivery inductance loop for the high-density 2.5D and 3D stacked packaging applications.

Growing community of inventors

Bayan Lepas, Malaysia

Saravanan Sethuraman