Intel Corporation

Intel IP Corporation

Saravana Maruthamuthu

Andreas Wolter

Georg Seidemann

Andreas Augustin

Thorsten Meyer

Bernd Waidhas

Mikael Bergholz Knudsen

Pablo Herrero

Pauli Jaervinen

Thomas Ort

Veronica Sciriha

Shidlingeshwar Khatakalle

Shankar Chandrasekaran Jayendra

Some embodiments include packages and methods of making the packages. One of the packages includes a ground layer (e.g., a ground plane) of metal formed over a chip of die, an antenna element of metal formed over the ground layer, and a dielectric lens formed over the antenna element. The dielectric lens includes a plurality of dielectric layers that have graded dielectric constants in a decreasing order along a direction from the antenna element toward a top surface of the package.

Antenna with graded dielectirc and method of making the same

A package on a die having a low resistive substrate, wherein the package comprises an inductor on low-k dielectric and a capacitor on high-k dielectric. The stacked arrangement having different dielectric materials may provide an inductor having a high Q-factor while still having a high capacitance density. In addition, moving the inductor from the die to the package and fabricating the high density capacitor on the package reduces the silicon area required permitting smaller RF/analog blocks on the chip.

Resonant LC tank package and method of manufacture

Various embodiments include, for example, a noise suppression filter for a power-delivery network (PDN). In one exemplary embodiment, a capacitor device, which may be used as at least a portion of the noise suppression filter, includes a first conductive plate and a second conductive plate with a dielectric material formed between the first conductive plate and the second conductive plate. A floating conductive fill layer is formed within the dielectric material and between the first conductive plate and the second conductive plate. Other embodiments of capacitors, and methods of forming the capacitor, are disclosed.

High-density metal-insulator-metal (MiM) capacitors

A microelectronic device may include a substrate, a component, a first plate, a second plate, and a shield. The component may be disposed at least partially within the substrate. The first plate may be disposed on a first side of the component. The second plate may be disposed on a second side of the component. The shield may be disposed around at least a portion of a periphery of the component.

Component magnetic shielding for microelectronic devices

An antenna is described on ceramics that may be used for a packaged die. In one example, a package has a die, a ceramic substrate over the die, an antenna attached to the ceramic substrate, and conductive leads electrically connecting the antenna to the die.

Antenna on ceramics for a packaged die

Techniques and configurations are disclosed for bulk acoustic wave resonator (BAWR) tuner circuits and their use in integrated circuit (IC) packages and mobile communication devices for radio frequency (RF) communication. In some embodiments, a mobile communication device may include an antenna; a transmitter circuit having an output port, a tuner circuit having one or more BAWRs, an antenna port coupled to the antenna, a transmitter port coupled to the output port of the transmitter circuit, and a control port; and a control circuit, coupled to the control port, configured to adjust an impedance of the tuner circuit, via adjustment of a BAWR or another component of the tuner circuit, based at least in part on an impedance of the antenna. Other embodiments may be described and/or claimed.

Bulk acoustic wave resonator tuner circuits

A semiconductor device may include: a chip; a chip packaging structure at least partially surrounding the chip and having a receiving region configured to receive a first capacitive coupling structure; a first capacitive coupling structure disposed in the receiving region; and a second capacitive coupling structure disposed over the first capacitive coupling structure and capacitively coupled to the first capacitive coupling structure.

Growing community of inventors

Munich, Germany

Saravana Maruthamuthu