Az Electronic Materials (Luxembourg) S.a.r.l.

Sara Tsuyuki

Go Noya

Yuriko Matsuura

Disclosed are a rinse solution for lithography comprising water and a nonionic surfactant represented by the formula (I) (Rand Rmay be the same as or different from each other and represent a hydrogen atom or a methyl group, Rand Rmay be the same as or different from each other and represent a hydrogen atom, a methyl group or an ethyl group, Rrepresents a hydrocarbon group having 2 to 5 carbon atoms, in which one or more of a double bond or triple bond are contained, or a phenylene group, and Rand Rmay be the same as or different from each other and represent a hydrogen atom or a methyl group) and a method for forming a resist pattern by rinsing the resist pattern obtained by exposing and developing a photosensitive resist with the rinse solution for lithography described above. 

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Shizouka, Japan

Sara Tsuyuki