Ams Ag

Austriamicrosystems Ag

Sara Carniello

Martin Schrems

Franz Schrank

Jochen Kraft

Georg Röhrer

Rainer Minixhofer

Georg Roehrer

Hubert Enichlmair

Günther Koppitsch

Bernhard Loeffler

Volker Peters

Rainer Holzhaider

Michael Beutl

A dielectric layer () is arranged on the main surface () of a semiconductor substrate (), and a passivation layer () is arranged on the dielectric layer. A metal layer () is embedded in the dielectric layer above an opening () in the substrate, and a metallization () is arranged in the opening. The metallization contacts the metal layer and forms a through-substrate via to a rear surface () of the substrate. A layer or layer sequence () comprising at least one further layer is arranged on the passivation layer above the opening. In this way the bottom of the through-substrate via is stabilized. A plug () may additionally be arranged in the opening without filling the opening.

Semiconductor device with through-substrate via and corresponding method of manufacture

A bolometer () comprises a first and a second suspension beam () and a semiconductor portion () that is suspended by the first and the second suspension beam () and comprises a first region () of a first conductivity type and a second region () of a second conductivity type. The first region () comprises a first triangle () or at least two stripes () or islands () which each contribute to a non-short-circuited diode () with the second region ().

Bolometer and method for measurement of electromagnetic radiation

The semiconductor device comprises a semiconductor substrate (), a sensor or sensor array () arranged at a main surface () of the substrate, an integrated circuit () arranged at or above the main surface, and a focusing element () comprising recesses () formed within a further main surface () of the substrate opposite the main surface. The focusing element may be arranged opposite the sensor or sensor array (), which may be a photosensor or photodetector or an array of photosensors or photodetectors, for instance. The focusing element () is formed by etching the recesses () into the semiconductor material.

Semiconductor device with surface integrated focusing element and method of producing a semiconductor device with focusing element

In an insulation layer of an SOI substrate, a connection pad is arranged. A contact hole opening above the connection pad is provided on side walls and on the connection pad with a metallization that is contacted on top side with a top metal.

Method for producing a semiconductor component, and semiconductor component

Through a main surface () of a semiconductor substrate () of a first type of conductivity, a doped well of a second type of conductivity is implanted to form a sensor region () extending perpendicularly to the main surface. The sensor region can be confined laterally by trenches () comprising an electrically insulating trench filling (). The bottom of the sensor region is insulated by a pn-junction (). Contacts () are applied to the main surface and provided for the application of an operation voltage and the measurement of a Hall voltage.

Vertical Hall sensor and method of producing a vertical Hall sensor

A well () doped for a conductivity type and provided as the sensor region is formed in a substrate () made of semiconductor material. Contact regions (), arranged spaced apart from one another and doped for the same conductivity type as the well (), are formed in a cover layer () that delimits the region with the conductivity type of the well. The contact areas () are electroconductively connected to the well () and provided for terminal contacts ().

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Graz, Austria

Sara Carniello