Infineon Technologies Ag

Saqib Kaleem

Pietro Brenner

Walter Hartner

Martin Dechant

Jonas Eric Sebastian Fritzin

Julian Winfried Kaiser

A device includes a high frequency chip and a dielectric material arranged between a first area radiating an electromagnetic interference signal in a first frequency range between 1 GHz and 1 THz and a second area receiving the electromagnetic interference signal. An attenuation of the dielectric material is more than 5 dB/cm at least in a subrange of the first frequency range.

High frequency devices including attenuating dielectric materials

A device includes a semiconductor chip including an electrical contact arranged on a main surface of the semiconductor chip. The device includes an external connection element configured to provide a first coax-like electrical connection between the device and a printed circuit board, wherein the first coax-like electrical connection includes a section extending in a direction vertical to the main surface of the semiconductor chip. The device further includes an electrical redistribution layer arranged over the main surface of the semiconductor chip and configured to provide a second coax-like electrical connection between the electrical contact of the semiconductor chip and the external connection element, wherein the second coax-like electrical connection includes a section extending in a direction parallel to the main surface of the semiconductor chip.

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Munich, Germany

Saqib Kaleem