Applied Materials, Inc.

Saptarshi Basu

Ganesh Balasubramanian

Kwangduk Douglas Lee

Prashant Kumar Kulshreshtha

Juan Carlos Rocha-Alvarez

Bok Hoen Kim

Jianhua Zhou

Hari K Ponnekanti

Dale Robert Du Bois

Martin Jay Seamons

Ziqing Duan

Praket Prakash Jha

Sudha S Rathi

Kalyanjit Ghosh

Jeongmin Lee

Mandar Balasaheb Pandit

Paul Dennis Connors

Venkatanarayana Shankaramurthy

Lei Jing

Karthik Thimmavajjula Narasimha

Mohsin Waqar

Liliya Krivulina

Brett Berens

Hiroyuki Ogiso

Rick Gilbert

Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.

Loadlock integrated bevel etcher system

Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.

Gas flow profile modulated control of overlay in plasma CVD films

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San Jose, CA, United States of America

Saptarshi Basu