Sharp Kabushiki Kaisha Corporation

Saori Kurogane

Hiromi Sakamoto

Takeyuki Ashida

Yasuhiko Sugihara

The liquid crystal display device includes: a first differently shaped polarizing plate provided with a first hole; a liquid crystal display panel; and a second differently shaped polarizing plate provided with a second hole, wherein, when directions parallel to machine directions of the first and second differently shaped polarizing plates are defined as first and second directions, a first length of the first differently shaped polarizing plate in the second direction is shorter than a second length of the second differently shaped polarizing plate in the first direction, and a first radius of curvature of the first hole at a tangent point between a straight line extending in the second direction and the perimeter of the first hole is smaller than a second radius of curvature of the second hole at a tangent point between a straight line extending in the first direction and the perimeter of the second hole.

Liquid crystal display device

A thin film transistor of this invention includes: a source and drain regions formed on an insulating base region; and a conductive layer connected to the source and drain regions. The conductive layer has a layered structure of an Al-containing metal film and an N-containing Mo film.

Thin film transistor

A terminal section for anodic oxidation made of a metal which is the same kind of a metal as a light shielding film is formed on an end of a light transmitting substrate. Then, wiring space for the terminal section for anodic oxidation is masked, and a first insulating film, a semiconductor layer and a second insulating film are deposited by the sputtering method or the CVD method, for example. Moreover, an electrically conductive material to be a gate electrode is laminated and patterned on the second insulating film and the terminal section for anodic oxidation so that the wiring space for the terminal section for anodic oxidation is exposed. As a result, the gate electrode which is electrically connected to the terminal section for anodic oxidation is formed. By making wiring in the wiring space for the terminal section for anodic oxidation, the gate electrode is anodically oxidized. With the above method, only the wiring space for the terminal section for anodic oxidation is easily exposed, and the terminal section for anodic oxidation can be electrically connected to the gate electrode. Therefore, with the above method, a number of the processes can be decreased, the process for anodic oxidation can be simplified and cost of production can be reduced. Moreover, a thin film transistor with high reliability can be provided.

Growing community of inventors

Higashiosaka, Japan

Saori Kurogane