Semiconductor Components Industries, LLC

Santosh Menon

Jeffrey P Gambino

Michael John Seddon

Dean E Probst

Peter Austin Burke

David T Price

Bigildis Dosdos

Bruce Greenwood

Jeffery Allen Neuls

Ladislav Seliga

Robert Davis

Radim Spetik

A method includes forming a plurality of pockets of semiconductor material in a semiconductor substrate. The plurality of pockets are electrically isolated from the semiconductor substrate. The method further involves forming a metal-oxide-semiconductor field-effect transistor (MOSFET) in a pocket of the plurality of pockets, the MOSFET being a vertical trench shielded gate MOSFET. The method further includes forming an electrical connection to a drain region of the MOSFET vertically below a trench and a mesa of the MOSFET.

Configurable low ohmic power circuits

A stacked assembly of semiconductor devices includes a mounting pad covering a first portion of a low-side semiconductor device, and a contact layer covering a second portion of the low-side semiconductor device. A first mounting clip electrically connected to the contact layer has a supporting portion joining the first mounting clip to a first lead frame portion. A second mounting clip attached to the mounting pad has a supporting portion joining the second mounting clip to a second lead frame portion. A high-side semiconductor device has a first terminal electrically connected to the first mounting clip and thereby to the contact layer, and a second terminal electrically connected to the second mounting clip.

Stacked transistor assembly with dual middle mounting clips

Growing community of inventors

Portland, OR, United States of America

Santosh Menon