Everspin Technologies, Inc.

Santosh Karre

Sanjeev Aggarwal

Kerry Joseph Nagel

Sarin A Deshpande

Fabrication of a magnetic memory element, including a via () in an interlevel dielectric layer (), providing an electrical connection between an underlying metal region () and a magnetoresistive stack device, such as a magnetic tunnel junction (), involves forming a transition metal layer () in the via by atomic layer deposition. The via optionally includes a tantalum-rich layer () above, and/or a cap layer () below, the transition metal layer, and may have a diameter less than or equal than a diameter of the magnetoresistive stack device.

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Chandler, AZ, United States of America

Santosh Karre