Silicon Storage Technology, Inc.

Agency for Science, Technology and Research

Santosh Hariharan

Hieu Van Tran

Nhan Do

Steven Lemke

Vipin Tiwari

Xian Liu

Feng Zhou

Stanley Hong

Zhixian Chen

Xinpeng Wang

An artificial neural network device that utilizes analog neuromorphic memory that comprises one or more non-volatile memory arrays. The embodiments comprise improved mechanisms and algorithms for tuning the non-volatile memory arrays such that the floating gates of the memory cells can be quickly and accurately injected with the desired amount of charge to signify an analog value utilized as a weight by the artificial neural network.

High precision and highly efficient tuning mechanisms and algorithms for analog neuromorphic memory in artificial neural networks

A memory device includes a metal oxide material disposed between and in electrical contact with first and second conductive electrodes, and an electrical current source configured to apply one or more electrical current pulses through the metal oxide material. For each of the one or more electrical current pulses, an amplitude of the electrical current increases over time during the electrical current pulse to form a conductive filament in metal oxide material.

Resistive random access memory (RRAM) cell filament formation using current waveforms

Growing community of inventors

San Jose, CA, United States of America

Santosh Hariharan