Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Santhosh Onkaraiah

Olivier Thomas

Bastien Giraud

Marc Belleville

Adam Makosiej

Fabien Clermidy

Jean-Michel Portal

Haithem Ayari

Yves Maneglia

Thomas-Medhi Benoist

An electronic circuit including a bipolar switching memory device including first and second electrodes at terminals of which a programming voltage can be applied, the circuit including: a first mechanism applying, to the first electrode, a data signal having, during a time period d, a constant state 0 or 1; a second mechanism applying, to the second electrode, a control signal that alternates, during time period d, between state 1 and state 0, the control signal being same regardless of the state in which the memory device is programmed; a selection device allowing a current to flow into the memory device during a programming time included in time period d; and a change of state of the control signal taking place during the programming time.

Method for programming a bipolar resistive switching memory device

A non-volatile memory including a plurality of elementary cells, each cell including: a first programmable-resistance storage element connected between first and second nodes of the cell; a first access transistor coupling the second node to a third node of the cell; and a second access transistor coupling the second node to a fourth node of the cell.

Programmable-resistance non-volatile memory

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Grenoble, France

Santhosh Onkaraiah