United States of America as Represented by the Secretary of the Air Force

Other

International Business Machines Corporation

Santanu Bag

Michael F Durstock

Teodor Krassimirov Todorov

David Brian Mitzi

David Aaron Randolph Barkhouse

Romesh J Patel

Benjamin J Leever

James R Deneault

A tandem solar cell comprises a front subcell; a back subcell; and an interconnecting layer of Cr/MoObetween the front subcell and the back subcell and connecting the two subcells in series. The back subcell may be an isoindigo-based polymer. The front subcell may comprise a carbazole-thienyl-benzothiadiazole based polymer. The front subcell may comprise an isoindigo-based polymer. The isoindigo-based polymer is a repeating 2-thiophene-terminated polymer. A tandem solar cell comprises a substrate layer; a layer of PCDTBT:PCBM applied on the substrate layer; a bilayer of chromium and MoOapplied to the PCDTBT:PCBM layer; a layer of P(T3-il)-2:PCBM applied on the bilayer of chromium and MoO; and Ca and Al electrode layer on the top.

Efficient interconnecting layer for tandem solar cells

A tandem solar cell comprises a back subcell; a front subcell; and an interconnecting layer of Cr/MoO3 between the back subcell and the front subcell and connecting the two subcells in series. The front subcell may comprise a carbazole-thienyl-benzothiadiazole based polymer and the back subcell may comprise an isoindigo-based polymer. A method for making a tandem solar cell comprises a) providing a substrate layer; b) applying a layer of PCDTBT:PCBM to the substrate layer; c) applying a bilayer of chromium and MoOto the PCDTBT:PCBM layer; d) applying a layer of P(T3-iI)-2:PCBM on the bilayer of chromium and MoO; and e) applying a Ca and Al electrode layer on the top.

A method for increasing the speed of aerosol jet assisted printing a layered perovskite structure comprises applying a PEDOT:PSS layer to a substrate; applying an aerosol mist containing methylammonium iodide and lead iodide, with or without additives, atop the PEDOT:PSS layer with an aerosol jet nozzle; and holding the structure to form a methylammonium lead iodide (CHNHPbI) perovskite thin film layer. The substrate may be an ITO glass or plastic substrate, and the PEDOT:PSS layer may be applied by a process selected from spin-coating, inkjet-printing, slot-die-coating, aerosol jet printing, physical vapor deposition, chemical vapor deposition, and electrochemical deposition. The aerosol mist is generated from a single ink comprising all the constituents of methylammonium lead iodide either dissolved or suspended in one or more compatible solvents or co-solvents. The holding of the CHNHPbIlayer may be performed at about 25-120&#xb0; C. or lower for 96 hours or less.

High-speed hybrid perovskite processing

A method for aerosol-jet printing a layered perovskite structure by applying a PEDOT:PSS layer to a substrate; applying a layer of lead iodide (PbI) to the PEDOT:PSS layer; and applying an aerosol mist of methylammonium iodide (CHNHI) atop the PbIlayer with an aerosol-jet nozzle to form a CHNHPbIperovskite film layer. The substrate may be an ITO glass substrate, and the PEDOT:PSS layer may be applied by a process selected from spin-coating, inkjet-printing, slot-die-coating, aerosol-jet printing, physical vapor deposition, chemical vapor deposition, and electrochemical deposition. The PbIlayer may be applied by a process selected from spin-coating, aerosol-jet printing, inkjet-printing, slot-die-coating, physical vapor deposition, chemical vapor deposition, and electrochemical deposition, and the PbIfor application to the PEDOT:PSS layer may be in a solution of DMF, DMSO, &#x3b3;-butyrolactone, or a combination thereof.

Defect mitigation of thin-film hybrid perovskite and direct writing on a curved surface

Techniques for fabrication of kesterite Cu&#x2014;Zn&#x2014;Sn&#x2014;(Se,S) films and improved photovoltaic devices based on these films are provided. In one aspect, a method of fabricating a kesterite film having a formula CuZnSn(SSe), wherein 0&#x2264;x&#x2264;1; 0&#x2264;y&#x2264;1; 0&#x2264;z&#x2264;1; and &#x2212;1&#x2264;q&#x2264;1 is provided. The method includes the following steps. A substrate is provided. A bulk precursor layer is formed on the substrate, the bulk precursor layer comprising Cu, Zn, Sn and at least one of S and Se. A capping layer is formed on the bulk precursor layer, the capping layer comprising at least one of Sn, S and Se. The bulk precursor layer and the capping layer are annealed under conditions sufficient to produce the kesterite film having values of x, y, z and q for any given part of the film that deviate from average values of x, y, z and q throughout the film by less than 20 percent.

Capping layers for improved crystallization

A layered perovskite structure comprising a substrate having an upper surface and a lower surface; and a layer of a perovskite film on the upper surface. A passivating layer may be applied to the upper surface of the substrate to which the perovskite film is attached. The passivating layer comprises at least one a chalcogenide-containing species with the general chemical formula (EE)N(EE)N'C&#x2550;X where any one of E, E, Eand Eis independently selected from C1-C15 organic substituents comprising from 0 to 15 heteroatoms or hydrogen, and X is S, Se or Te, thiourea, thioacetamide, selenoacetamide, selenourea, HS, HSe, HTe, or LXH wherein L is a Corganic substituent comprising heteroatoms and X&#x2550;S, Se, or Te. The substrate comprises PEDOT:PSS, and may further comprise a layered glass/ITO/PEDOT:PSS structure. A passivating layer is applied to the PEDOT:PSS layer, and a top electrode may be applied over the perovskite film.

High quality, ultra-thin organic-inorganic hybrid perovskite

A method for making a layered perovskite structure comprises: a) performing a vapor assisted surface treatment (VAST) of a substrate with a surface passivating agent; b) applying a layer of PbIto the passivating agent; c) exposing the PbIto methylammonium iodide (CHNHI) in an orthogonal solvent; and d) annealing the structure. A PEDOT:PSS coated ITO glass substrate may be used. The surface passivation agent may be one a chalcogenide-containing species with the general chemical formula (EE)N(EE)N'C&#x2550;X where any one of E, E, Eand Eis independently selected from C1-C15 organic substituents comprising from 0 to 15 heteroatoms or hydrogen, and X is S, Se or Te, thiourea, thioacetamide, selenoacetamide, selenourea, HS, HSe, HTe or LXH wherein L is a Corganic substituent comprising heteroatoms and X&#x2550;S, Se, or Te. The passivating agent may be applied by spin-coating, inkjet-printing, slot-die-coating, aerosol-jet printing, PVD, CVD, and electrochemical deposition.

Method for producing high quality, ultra-thin organic-inorganic hybrid perovskite

A method of forming perovskite thin films with micron-sized perovskite grains is provided. A layer of PbXin a solution containing a metal ion additive is applied to a structure. The structure with the PbXlayer is annealed a first time. The PbXis exposed to CHNHX in a solvent. The structure with the exposed PbXlayer is annealed a second time resulting in a CHNHPbXlayer. X is selected from a group consisting of Cl, Br, I, CN, and SCN.

Controlled crystallization to grow large grain organometal halide perovskite thin film

Techniques for fabrication of kesterite Cu&#x2014;Zn&#x2014;Sn&#x2014;(Se,S) films and improved photovoltaic devices based on these films are provided. In one aspect, a method of fabricating a kesterite film having a formula CuZnSn(SSe), wherein 0&#x2266;x&#x2266;1; 0&#x2266;y&#x2266;1; 0&#x2266;z&#x2266;1; and &#x2212;1&#x2266;q&#x2266;1 is provided. The method includes the following steps. A substrate is provided. A bulk precursor layer is formed on the substrate, the bulk precursor layer comprising Cu, Zn, Sn and at least one of S and Se. A capping layer is formed on the bulk precursor layer, the capping layer comprising at least one of Sn, S and Se. The bulk precursor layer and the capping layer are annealed under conditions sufficient to produce the kesterite film having values of x, y, z and q for any given part of the film that deviate from average values of x, y, z and q throughout the film by less than 20 percent.

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Beavercreek, OH, United States of America

Santanu Bag