Panasonic Intellectual Property Management Co., Ltd.

Sanshiro Shishido

Takeyoshi Tokuhara

Masaaki Yanagida

Shinichi Machida

Yasuo Miyake

Kazuko Nishimura

Masashi Murakami

Hidenari Kanehara

Masumi Izuchi

Manabu Nakata

Katsuya Nozawa

Tsutomu Kobayashi

Shunsuke Isono

Masahiro Higuchi

Tokuhiko Tamaki

Nozomu Matsukawa

Masayuki Takase

Naoki Shimasaki

Hiroshi Iwai

Yoshihiro Sato

Osamu Shibata

Yutaka Abe

Yoshiaki Satou

Yusuke Okada

Kyosuke Kobinata

Takeo Azuma

Satoshi Sato

Kunio Nobori

Yoshiyuki Matsunaga

Yasunori Inoue

Takayoshi Yamada

Yuuko Tomekawa

Takahiro Koyanagi

Makoto Ikuma

Ryota Sakaida

Akio Nakajun

Dai Ichiryu

An imaging device including a semiconductor substrate; a first photoelectric converter that is located in the semiconductor substrate and that generates a first signal charge by photoelectric conversion; a first node to which the first signal charge is input; a capacitor having a first terminal coupled to the first node; and a second photoelectric converter that is located in the semiconductor substrate and that generates a second signal charge by photoelectric conversion. The area of the second photoelectric converter is greater than the area of the first photoelectric converter in a plan view, and the number of saturation charges of a first imaging cell including the first photoelectric converter and the capacitor is greater than the number of saturation charges of a second imaging cell including the second photoelectric converter.

Imaging device including photoelectric converters and capacitor

A control method for an imaging element is a control method for an imaging element including a photoelectric converter and a peripheral circuit connected to the photoelectric converter. The control method for the imaging element includes receiving a predetermined input signal, and controlling the imaging element by switching between a normal imaging mode and a low power consumption mode based on the predetermined input signal. In the normal imaging mode, the imaging element is controlled to apply first voltage between the first electrode and the second electrode. In the low power consumption mode, the imaging element is controlled to apply second voltage between the first electrode and the second electrode and to stop part of operation of the peripheral circuit, the second voltage being larger than 0 V and smaller than the first voltage.

Imaging element control method and camera system having low power consumption mode

An organic device includes at least one electrode, an insulating layer adjacent to the at least one electrode in a plan view, and an organic layer that is continuously in contact with an upper surface of the at least one electrode and an upper surface of the insulating layer. The organic layer contains a polymer of an organic material. The organic material contains a basic molecular skeleton and a polymerizable functional group. In the polymer, the organic material is polymerized through the polymerizable functional group.

Organic device and method for producing organic device

A camera system includes: a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, the photoelectric conversion layer converting incident light into electric charge; voltage application circuitry that supplies a first voltage and a second voltage less than the first voltage between the first electrode and the second electrode in a frame; and a controller that derives a voltage value corresponding to an attenuation ratio set for the frame and that causes the voltage supply circuitry to supply the first voltage having the voltage value and the second voltage between the first electrode and the second electrode in the frame.

Imaging device and camera system

An imaging device including first and second substrate; first and second connection portion electrically connecting the first and second substrate; a first and second pixel; and a common signal line for the first and second pixel. Each of the first and second pixels includes: a photoelectric converter that converts incident light into a signal charge, and a first transistor that outputs a signal corresponding to the signal charge to the common signal line. The first substrate includes the photoelectric converter and first transistor of the first and second pixels. The second substrate includes: a first line transmitting a voltage to the first transistor of the first and second pixel, and a voltage source coupled to the first transistor of the first pixel, via the first line and the first connection portion, and coupled to the first transistor of the second pixel, via the first line and the second connection portion.

Imaging device

An imaging device includes a first pixel and a second pixel adjacent to the first pixel. Each of the first pixel and the second pixel includes a first electrode, a second electrode positioned on or above the first electrode and facing the first electrode, a photoelectric conversion layer positioned between the first electrode and the second electrode, and a first charge-blocking layer positioned between the first electrode and the photoelectric conversion layer. The first charge-blocking layer of the first pixel is separated from the first charge-blocking layer of the second pixel. The photoelectric conversion layer is disposed continuously to the first pixel and the second pixel. An area of the first charge-blocking layer of the first pixel is larger than an area of the first electrode of the first pixel in plan view.

An imaging device includes pixels. Each of the pixels includes a counter electrode, a pixel electrode, and a photoelectric conversion layer that includes carbon nanotubes. The pixels include a first pixel and a second pixel adjacent to the first pixel. The pixel electrode of the first pixel and the pixel electrode of the second pixel are isolated from each other. Carbon nanotubes included in the photoelectric conversion layer in at least one selected from the group consisting of the first pixel and the second pixel include at least one first carbon nanotube that satisfies A<B, where A denotes length of a carbon nanotube in a direction in which the pixel electrode of the first pixel and the pixel electrode of the second pixel are arranged and B denotes length of a gap between the pixel electrode of the first pixel and the pixel electrode of the second pixel.

A light sensor includes a photoelectric conversion layer and a long-pass filter that is disposed above the photoelectric conversion layer. The photoelectric conversion layer has a spectral sensitivity characteristic having a first peak at a first wavelength that is longer than a cut-on wavelength of the long-pass filter, and a spectral sensitivity of the photoelectric conversion layer at the cut-on wavelength is greater than or equal to 0% and less than or equal to 50% of a spectral sensitivity of the photoelectric conversion layer at the first wavelength.

Light sensor including long-pass filter and light detection system

A photoelectric conversion element includes: a first electrode; a second electrode; and a photoelectric conversion layer disposed between the first electrode and the second electrode and containing semiconducting carbon nanotubes and a first material that functions as a donor or an acceptor for the semiconducting carbon nanotubes. The semiconducting carbon nanotubes have light absorption characteristics including a first absorption peak at a first wavelength, a second absorption peak at a second wavelength shorter than the first wavelength, and a third absorption peak at a third wavelength shorter than the second wavelength. The first material is transparent to light in at least one wavelength range selected from the group consisting of a first wavelength range between the first wavelength and the second wavelength and a second wavelength range between the second wavelength and the third wavelength.

Photoelectric conversion element, electronic device, and light-emitting device

A camera system includes: a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, the photoelectric conversion layer converting incident light into electric charge; voltage application circuitry that supplies a first voltage and a second voltage less than the first voltage between the first electrode and the second electrode such that the first voltage is applied at least one time in a frame; and a controller that derives a total length of at least one period in which the first voltage is applied in the frame, the total length corresponding to an attenuation ratio set for the frame, and causes the voltage supply circuitry to supply the first voltage in the at least one period having the total length in the frame.

An imaging device includes: a semiconductor substrate; pixel electrodes located above the semiconductor substrate and each electrically connected to the semiconductor substrate; a counter electrode located above the pixel electrodes; a first photoelectric conversion layer located between the counter electrode and the pixel electrodes; and at least one first light-shielding body located in or above the first photoelectric conversion layer. The first photoelectric conversion layer contains a semiconducting carbon nanotube that absorbs light in a first wavelength range and an organic molecule that covers the semiconducting carbon nanotube, absorbs light in a second wavelength range, and emits fluorescence in a third wavelength range. The at least one first light-shielding body absorbs or reflects light with a wavelength in at least part of the second wavelength range.

An imaging device that includes a semiconductor substrate; a first photoelectric converter that is located in the semiconductor substrate and that generates a first signal charge by photoelectric conversion; a first node to which the first signal charge is input; a capacitor having a first terminal coupled to the first node; a second photoelectric converter that is located in the semiconductor substrate and that generates a second signal charge by photoelectric conversion; a second node to which the second signal charge is input; a transistor having a gate coupled to the second node; and a switch element coupled between the first node and the second node, where a number of saturation charges of a first imaging cell including the first photoelectric converter and the capacitor is greater than a number of saturation charges of a second imaging cell including the second photoelectric converter.

An imaging device includes a pixel electrode, a counter electrode that faces the pixel electrode, a first photoelectric conversion layer that is located between the pixel electrode and the counter electrode and that generates first signal charge, a second photoelectric conversion layer that is located between the first photoelectric conversion layer and the pixel electrode and that generates second signal charge, a first barrier layer that is located between the first photoelectric conversion layer and the second photoelectric conversion layer and that forms a first heterojunction barrier against the first signal charge in the first photoelectric conversion layer, and a charge accumulator that is electrically connected to the pixel electrode and that accumulates the first signal charge and the second signal charge.

Imaging device and method for driving imaging device

An imaging device includes a first substrate, and a second substrate stacked on the first substrate. A first connection portion and a second connection portion are between the first substrate and the second substrate. A first pixel and a second pixel each include a photoelectric converter that converts incident light into a signal charge, and a detection circuit that detects the signal charge. The first substrate includes the photoelectric converter and the detection circuit. The second substrate includes a first line, and a voltage source that is coupled to the detection circuit of the first pixel, via the first line and the first connection portion, and that is coupled to the detection circuit of the second pixel, via the first line and the second connection portion.

An optical sensor includes: a photosensitive layer that absorbs incident light to generate a first carrier with a first polarity and a second carrier with a second polarity different from the first polarity; a channel layer that is electrically connected to the photosensitive layer and that conducts the first carrier that has moved from the photosensitive layer; a counter electrode facing the channel layer through the photosensitive layer; an insulating layer positioned between the photosensitive layer and the counter electrode; and a source electrode and a drain electrode each electrically connected to the channel layer.

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Osaka, Japan

Sanshiro Shishido