Tdk Corporation

Sanshiro Aman

Hiroki Akiba

Mari Miyauchi

Keiko Takeuchi

Dan Sakurai

Takashi Kojima

Nobuto Morigasaki

Masakazu Hosono

Hideaki Seki

Kosuke Takano

Satoshi Takagi

Tetsuhiro Takahashi

Taku Masai

Masayuki Tamura

Hidesada Natsui

Ryota Nomura

Yuki Kamada

A dielectric composition with high voltage resistance and favorable reliability, and an electronic component using the dielectric composition. The dielectric composition contains, as a main component, a tungsten bronze type composite oxide represented by a chemical formula (SrBaCa)R(TiZr)(NbTa)Oin which the R is at least one element selected from Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and s, t, x, a, and b satisfy 0.50&#x2264;s&#x2264;1.00, 0&#x2264;t&#x2264;0.50, 0.50&#x2264;s+t&#x2264;1.00, 0.50&#x3c;x&#x2264;1.50, 0.30&#x2264;a&#x2264;1.00, and 0&#x2264;b&#x2264;1.00. At least one or more elements selected from Mn, Mg, Co, V, W, Mo, Si, Li, B, and Al are contained as a sub component in 0.10 mol or more and 20.00 mol or less with respect to 100 mol of the main component.

Dielectric composition, dielectric element, electronic component, and multilayer electronic component

[Object] provide a dielectric composition with high voltage resistance and favorable reliability, and an electronic component using the dielectric composition. [Solving Means] A dielectric composition contains, as a main component, a tungsten bronze type composite oxide represented by a chemical formula (SrBaCa)R(TiZr)(NbTa)O, in which the R is at least one element selected from Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and s, t, x, a, and b satisfy 0.70&#x2264;s&#x2264;1.00, 0&#x2264;t&#x2264;0.30, 0.70&#x2264;s+t&#x2264;1.00, 0&#x2264;x&#x2264;0.50, 0.10&#x2264;a&#x2264;1.00, and 0&#x2264;h&#x2264;1.00. At least one or more elements selected from Mn, Mg, Co, V, W, Mo, Si, Li, B, and Al are contained as a sub component in 0.10 mol or more and 20.00 mol or less with respect to 100 mol of the main component.

A dielectric composition with high voltage resistance and favorable reliability, and an electronic component using the dielectric composition. The dielectric composition contains, as a main component, a tungsten bronze type composite oxide represented by a chemical formula (SrBaCa)R(TiZr)(NbTa)O, in which the R is at least one element selected from Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and s, t, x, a, and b satisfy 0.50&#x2264;s&#x2264;1.00, 0&#x2264;t&#x2264;0.30, 0.50&#x2264;s+t&#x2264;1.00, 1.50&#x3c;x&#x2264;3.00, 0.20&#x2264;a&#x2264;1.00, and 0&#x2264;b&#x2264;1.00. At least one selected from Mn, Mg, Co, V, W, Mo, Si, Li, B, and Al is contained as a sub component in 0.10 mol or more and 20.00 mol or less with respect to 100 mol of the main component.

A dielectric composition with high voltage resistance and favorable reliability, and an electronic component using the composition, the composition containing a tungsten bronze type composite oxide represented by chemical formula (SrBaCa)R(TiZrSi)(NbTa)O, wherein R is at least one element selected from Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and s, t, x, a, b, and d satisfy 0&#x2264;s&#x2264;1.00, 0&#x2264;t&#x2264;1.00, 0&#x2264;s+t&#x2264;1.00, 0&#x2264;x&#x2264;3.00, 0.01&#x2264;a&#x2264;0.98, 0&#x2264;b&#x2264;1.00, 0.02&#x2264;d&#x2264;0.15, and 0.03&#x2264;a+d&#x2264;1.00. At least one element selected from Mn, Mg, Co, V, W, Mo, Li, B, and Al are contained as a sub component in 0.10 mol or more and 20.00 mol or less with respect to 100 mol of the main component.

A dielectric composition comprising a main component expressed by a chemical formula of (ABCDO, 0&#x2264;x&#x2264;5), wherein said 'A' component is at least one element selected form the group consisting of Ba, Ca, and Sr, said 'B' component is at least one element selected from the group consisting of Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, said &#x201c;C&#x201d; component is at least one element selected from the group consisting of Ti, and Zr, said &#x201c;D&#x201d; component is at least one element selected from the group consisting of Nb, and Ta, and said dielectric composition comprises 2.50 mol or more and 20.00 mol or less of an oxide of Ge as a first sub component with respect to 100 mol of said main component.

Dielectric composition, dielectric element, electronic device, and multilayer electronic device

A novel ceramic composition having a high relative dielectric constant. A ceramic composition includes a unit cell having at least two crystal structures selected from the group made of a monoclinic crystal, a tetragonal crystal, an orthorhombic crystal, and a rhombohedral crystal, characterized in that when the crystal structures are represented by the symmetry notation according to the Glazer method, namely xyz, n1, n2, and n3 are at least one selected from the group made of + and &#x2212;, or at least two selected from the group made of 0, +, and &#x2212;. By using this ceramic composition, a novel ceramic composition having a high relative dielectric constant can be obtained.

Ceramic composition

A dielectric ceramic composition comprises a main component composed of at least one selected from BaTiO, (Ba, Ca)TiO, (Ba, Sr)TiOand (Ba, Ca, Sr)TiO, an oxide of rare earth element and a composite compound including Ba. 9 to 13 mol of the composite compound in terms of composite compound is included in the dielectric composition. The dielectric ceramic composition includes surface diffusion particles having surface diffusion structure composed of non diffusion phase and diffusion phase including rare earth element. In the surface diffusion particle, when an area of the non diffusion phase is defined as S1, an area of the diffusion phase is defined as S2, S1 and S2 satisfy a relation of S1:S2=20:80 to 30:70 (Note that, except S1=30 and S2=70), when an average concentration of the rare earth element in the surface diffusion particle is defined as C, S2 and C satisfy a relation of 4.8&#x2266;S2&#xd7;C&#x2266;5.8. By the present invention, dielectric ceramic composition which improves reliability with obtaining good specific permittivity and temperature characteristic and electronic component to which the dielectric ceramic composition is applied can be obtained.

Dielectric ceramic composition and electronic component

A dielectric ceramic composition comprises a main component including BaTiO, a first subcomponent including BaZrO, a second subcomponent including an oxide of Mg, a third subcomponent including an oxide of rare earth, a fourth subcomponent including an oxide of at least one element selected from Mn, Cr, Co and Fe, and a fifth subcomponent including an oxide of at least one element selected from Si, Al, Ge, B and Li. At least a part of dielectric particles constituting the dielectric ceramic composition comprises a surface diffusion structure comprised of a central layer and a diffusion layer therearound. CR and CRmax, respectively defined as a concentration of said 'R' in a proximity point to a boundary face of the dielectric particle and a maximum concentration of the 'R' in the diffusion layer, satisfy a relation of CRmax/CR&#x3e;1. Also, CM and CMmax, respectively defined as a concentration of said Mg in a proximity point to a boundary face of the dielectric particle and a maximum concentration of Mg in the diffusion layer, satisfy a relation of CMmax/CM&#x3e;1.

Dielectric ceramic composition and electronic device

A dielectric ceramic composition of the present invention comprises; BaTiO(note that, m is 0.99&#x2266;m&#x2266;1.01), and BaZrO(note that, n is 0.99&#x2266;n&#x2266;1.01); wherein said dielectric ceramic composition consists of plurality of dielectric particles and a grain boundary phase existing between said dielectric particles adjacent to each other, when said dielectric particle having BaTiOas a main component is set to a first dielectric particle, said dielectric particle having BaZrOas a main component is set to a second dielectric particle, an average crystal diameter of said first dielectric particle is set to D(&#x3bc;m), and an average crystal diameter of said second dielectric particle is set to D(&#x3bc;m), then a ratio (D/D) of said Dwith respect to said Dis 0.04 to 0.33, said Dis 0.02 to 0.25 &#x3bc;m, and in said dielectric ceramic composition a ratio of the total number of said second dielectric particle with respect to the total number of said first dielectric particle is 0.10 to 2. The present invention is to provide the dielectric ceramic composition suitable for the medium-high voltage application used at a high rated voltage (for example, 100V or more).

Dielectric ceramic composition and electric device

The present invention relates to a dielectric ceramic composition comprising BaTiO, BaZrO, and the oxide of R wherein, when A is the content of BaZrO, and C is the content of the oxide R, with respect to 100 moles of BaTiO, then A is 40&#x2266;A&#x2266;65 moles and C is 4&#x2266;C&#x2266;15 moles; plus said dielectric composition satisfies the equation (1) and (2). The present invention can provide a dielectric ceramic composition good in IR lifetime, and capable to be suitably used for medium-high voltage which has a high rated voltage (for example, 100V or more).0.0038&#x2212;0.147&#x2266;&#x2266;0.004+0.04&#x2003;&#x2003;Equation (1)(note that, B is a ratio of the X-ray diffraction maximum intensity among peaks of said BaZrOwith respect to the X-ray diffraction maximum intensity among peaks of said BaTiO).0.0041&#x2212;0.0115&#x2266;&#x2266;0.0046+0.084&#x2003;&#x2003;Equation (2)(note that, D is a ratio of the X-ray diffraction maximum intensity among peaks of the oxide of said R with respect to the X-ray diffraction maximum intensity among peaks of said BaTiO).

Dielectric ceramic composition and an electric device

The invention aims at providing a dielectric ceramic composition including BaTiOwhere 'm' satisfies 0.99&#x2266;m&#x2266;1.01 and BaZrOwhere 'n' satisfies 0.99&#x2266;n&#x2266;1.01, an oxide of Mg, an oxide of R where R is at least one selected from Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, an oxide of at least one element selected from Mn, Cr, Co and Fe, and an oxide of at least one element selected from Si, Li, Al, Ge and B. 35 to 65 moles of BaZrO, 4 to 12 moles of an oxide of Mg, 4 to 15 moles of an oxide of R, 0.5 to 3 moles of an oxide of Mn, Cr, Co and Fe, and 3 to 9 moles of an oxide of Si, Li, Al, Ge and B are included therein per 100 moles of the BaTiO.

Growing community of inventors

Tokyo, Japan

Sanshiro Aman