Micron Technology Incorporated

Sanket S Kelkar

Christopher W Petz

Matthew N Rocklein

Dojun Kim

Brenda D Kraus

Qian Tao

Zhe Song

Paul A Paduano

An-Jen B Cheng

Ashonita A Chavan

Vassil N Antonov

Sanjeev Sapra

Sameer Chhajed

Michael Mutch

Devesh Dadhich Shreeram

Gurpreet S Lugani

Hidekazu Nobuto

Adriel Jebin Jacob Jebaraj

Richard Beeler

A DRAM capacitor comprising a first capacitor electrode configured as a container and comprising a doped titanium nitride material, a capacitor dielectric on the first capacitor electrode, and a second capacitor electrode on the capacitor dielectric. Methods of forming the DRAM capacitor are also disclosed, as are semiconductor devices and systems comprising such DRAM capacitors.

Doped titanium nitride materials for dram capacitors, and related semiconductor devices

Apparatuses, methods, and systems related to electrode formation are described. A first portion of a top electrode is formed over a dielectric material of a storage node. A metal oxide is formed over the first portion of the electrode. A second portion of the electrode is formed over the metal oxide.

Electrode formation

Some embodiments include a capacitor having a container-shaped bottom portion. The bottom portion has a first region over a second region. The first region is thinner than the second region. The first region is a leaker region and the second region is a bottom electrode region. The bottom portion has an interior surface that extends along the first and second regions. An insulative material extends into the container shape. The insulative material lines the interior surface of the container shape. A conductive plug extends into the container shape and is adjacent the insulative material. A conductive structure extends across the conductive plug, the insulative material and the first region of the bottom portion. The conductive structure directly contacts the insulative material and the first region of the bottom portion, and is electrically coupled with the conductive plug. Some embodiments include methods of forming assemblies.

Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker devices

An apparatus comprising a memory array comprising access lines. Each of the access lines comprises an insulating material adjacent a bottom surface and sidewalls of a base material, a first conductive material adjacent the insulating material, a second conductive material adjacent the first conductive material, and a barrier material between the first conductive material and the second conductive material. The barrier material is configured to suppress migration of reactive species from the second conductive material. Methods of forming the apparatus and electronic systems are also disclosed.

Apparatus including barrier materials within access line structures, and related methods and electronic systems

Doped titanium nitride materials for DRAM capacitors, and related semiconductor devices, systems, and methods

Methods, apparatuses, and systems related to forming a barrier material on an electrode are described. An example method includes forming a top electrode of a storage node on a dielectric material in a semiconductor fabrication sequence and forming, in-situ in a semiconductor fabrication apparatus, a barrier material on the top electrode to reduce damage to the dielectric material when ex-situ of the semiconductor fabrication apparatus.

Forming a barrier material on an electrode

Methods, apparatuses, and systems related to forming a barrier material between an electrode and a dielectric material are described. An example method includes forming a dielectric material on a bottom electrode material of a storage node in a semiconductor fabrication process. The method further includes forming a barrier material on the dielectric material to reduce oxygen vacancies in the dielectric material. The method further includes forming a top electrode on the barrier material.

Electrode/dielectric barrier material formation and structures

Methods, apparatuses, and systems related to shaping a storage node material are described. An example method includes forming a pillar with a pattern of materials. The method further includes depositing a storage node material on a side of the pillar. The method further includes etching sacrificial materials within the pillar. The method further includes etching the storage node material in a direction from the pillar into the storage node.

Storage node shaping

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Boise, ID, United States of America

Sanket S Kelkar