University of Sheffield

De Montfort University

Powdec K.k.

Eco Semiconductors Limited

Sankara Narayanan Ekkanath Madathil

Akira Nakajima

Hiroji Kawai

Mark Robert Sweet

Konstantin Vladislavovich Vershinin

Yasunobu Sumida

A semiconductor device comprises three semiconductor layers. The semiconductor layers are arranged to form a 2DHG and a 2DEG separated by a polarization layer. The device comprises a plurality of electrodes: first and second electrodes electrically connected to the 2DHG so that current can flow between them via the 2DHG and a third electrode electrically connected to the 2DEG so that when a positive voltage is applied to the third electrode, with respect to at least one of the other electrodes, the 2DEG and the 2DHG will be at least partially depleted.

Semiconductor devices with 2DEG and 2DHG

A low-loss GaN-based semiconductor device is provided. The semiconductor device has the InGaN layer (where 0&#x2266;z&#x3c;1), the AlGaN layer (where 0&#x3c;x&#x3c;1), the InGaN layer (where 0&#x2266;y&#x3c;1) and the p-type InGaN layer (where 0&#x2266;w&#x3c;1) which are sequentially stacked on a base substrate of a C-plane sapphire substrate, etc. At a non-operating time, the two-dimensional hole gas is formed in the InGaN layer in the vicinity part of a hetero-interface between the AlGaN layer and the InGaN layer, and the two-dimensional electron gas is formed in the InGaN layer in the vicinity part of a hetero-interface between the InGaN layer and the AlGaN layer.

Polarization super-junction low-loss gallium nitride semiconductor device

A semiconductor device includes at least one cell including a base region of a first conductivity type having disposed therein at least one emitter region of a second conductivity type, a first well region of a second conductivity type, a second well region of a first conductivity type, a drift region of a second conductivity type, a collector region of a first conductivity type, and a collector contact. Each cell is disposed within the first well region, and the first well region is disposed within the second well region. The device further includes a first gate in communication with a base region so that a MOSFET channel can be formed between an emitter region and the first well region, and at least one embedded region embedded in the first well region. The device is configured such that during operation of the device a depletion region at a junction between the base region and the first well region can extend to a junction between the first well region and the second well region.

Bipolar mosfet devices and methods for their use

There is disclosed a semiconductor device comprising: at least one cell comprising a base region ( ) of a first conductivity type having disposed therein at least one emitter region ( ) of a second conductivity type; a first well region ( ) of a second conductivity type; a second well region ( ) of a first conductivity type; a drift region ( ) of a second conductivity type; a collector region ( ) of a first conductivity type; a collector contact ( ) in which each cell is disposed within the first well region ( ) and the first well region ( ) is disposed within the second well-region ( ); the device further comprising: a first gate ( ) disposed over a base region ( ) so that a MOSFET channel can be formed between an emitter region ( ) and the first well region ( ); the device further comprising: a second gate disposer over the second well region ( ) so that a MOSFET channel can be formed between the first well region ( ) and the drift region ( ).

Growing community of inventors

Leicester, United Kingdom

Sankara Narayanan Ekkanath Madathil