Taiwan Semiconductor Manufacturing Comp. Ltd.

Skyworks Solutions, Inc.

Sanjeev Kumar Jain

Atul Katoch

Foad Arfaei Malekzadeh

Hassan Sarbishaei

Abdulhadi Ebrahim Abdulhadi

Haoran Yu

Nan Sen Lin

Gregory Edward Babcock

Arun Achyuthan

Kai Jiang

Ruchin Jain

Cormac Michael O'Connell

Sahil Preet Singh

Stephen Joseph Kovacic

Jaspal Singh Shah

Ali Taghvaei

Mehdi Naseri Ali Abadi

Marcin Dziok

Systems and method are provided for operating a multi-array memory that includes a left memory array and a right memory array of a memory bank. A command is received at memory input pins. A signal representative of the command is propagated to an array control inhibitor. An array inhibit command is received on one or more other pins of the memory and provided to the array control inhibitor. The array control inhibitor is used to prevent arrival of the command to one of the left memory array and the right memory array based on the array inhibit command.

Memory circuit including an array control inhibitor

Systems and methods are provided for controlling a sleep operation for a memory array. A memory system may include a memory array with a memory cell and a word line driver, the memory array receiving a word line clock signal that enables and disables memory read and write operations of the memory cell. The memory array may further including a switching circuit coupled between the word line driver and a power source, the switching circuit being controlled by a local word line sleep signal to turn power to the word line driver on and off. A latch circuit may generate the local word line sleep signal in response to a delayed clock signal and one or more power management control signals. The word line clock signal and the delayed clock signal may both being generated as a function of a memory clock signal. The latch circuit may synchronize the local word line sleep signal with the delayed clock signal such that the local word line sleep signal is prevented from turning off power to the word line driver until memory read and write operations of the memory cell are disabled by the word line clock signal.

Systems and methods for controlling power assertion in a memory device

Disclosed herein are related to reducing power consumption of a memory device when transitioning from a sleep state to an operational state. In one aspect, the memory device includes a memory cell to store data. In one aspect, the memory device includes an output driver configured to: generate an output signal indicating the stored data, in response to a sleep tracking signal indicating that the memory cell is in the operational state, and generate the output signal having a predetermined voltage irrespective of the stored data, in response to the sleep tracking signal indicating that the memory cell is in the sleep state. In one aspect, the sleep tracking signal is delayed from a sleep control signal causing the memory cell to operate in the sleep state or the operational state.

Low power wake up for memory

Systems and methods are provided for controlling a wake-up operation of a memory circuit. The memory circuit is configured to precharge the bit lines of a memory array sequentially during wakeup. A sleep signal is received by the first bit line of a memory cell and then a designed delay occurs prior to the precharge of a second complementary bit line. The sleep signal may then precharge the bit lines of a second memory cell with further delay between the precharge of each bit line. The memory circuit is configured to precharge both bit lines of a memory cell at the same time when an operation associated with that cell is designated.

Bit line pre-charge circuit for power management modes in multi bank SRAM

The present disclosure provides a memory device, which includes a memory array, a read-clock generation circuit, and a local input/output circuit. The read-clock generation circuit receives a sense amplifier enable signal, a first sense amplifier pre-charge signal, and a latched write enable signal to generate a first read enable signal. The local input/output circuit includes multiple pairs of column-address pass gates, and a pair of read pass gates. The plurality of pairs of column-address pass gates are configured to receive data from a bit-line pair of the memory cells in a row selected by an address signal. The pair of read pass gates connects a read bit-line pair to the bit-line pair in response to the first read enable signal being in a low-logic state. The first read enable signal is de-asserted after the read bit-line pair connected to the pair of read pass gates are pre-charged.

Memory device, read clock generation circuit, and method for controlling read operation in memory device

Beamforming communication systems with high linearity are provided. In certain embodiments, a method of beamforming includes generating a transmit signal using a baseband processor, providing digital pre-distortion to the transmit signal, generating a radio frequency input signal based on the transmit signal using a transceiver, processing the radio frequency input signal to generate a plurality of radio frequency output signals using a plurality of transmit signal paths of a front end system, providing analog pre-distortion to at least one of the plurality of transmit signal paths using the front end system, and radiating a transmit beam in response to receiving the plurality of radio frequency output signals using an antenna array.

Beamforming communication systems with high linearity

Circuits, systems, and methods are described herein for generating a boost voltage for a write operation of a memory cell. In one embodiment, a boost circuit includes a first inverter and a second inverter, each configured to invert a write signal. The boost circuit also includes a transistor and a capacitor. The transistor is coupled to an output of the first inverter. The transistor is configured to charge a capacitor based on the write signal and provide a supply voltage to a write driver. The capacitor is coupled to an output of the second inverter. The capacitor is configured to generate and provide a delta voltage to the write driver.

Write driver boost circuit for memory cells

Low noise amplifiers (LNAs) are disclosed herein. In certain embodiments, an LNA includes an input balun configured to convert a single-ended radio frequency (RF) receive signal to a differential RF receive signal, an amplifier chain configured to amplify the differential RF receive signal to generate a differential amplified RF receive signal, and an output balun configured to convert the differential amplified RF receive signal into a single-ended amplified RF receive signal. The LNA's amplifier chain is operable in multiple gain modes, and includes a first differential amplification stage, a second differential amplification stage, and a third differential amplification stage.

Low noise amplifiers with gain steps provided by bypass stage and current steering

Low noise amplifiers (LNAs) with low noise figure are provided. In certain embodiments, an LNA includes a single-ended LNA stage including an input for receiving a single-ended input signal from an antenna and an output for providing a single-ended amplified signal, a balun for converting the single-ended amplified signal to a differential signal, and a variable gain differential amplification stage for amplifying the differential signal from the balun. Implementing the LNA in this manner provides low noise figure, high gain, flexibility in controlling gain, and less sensitivity to ground/supply impedance.

Low noise amplifiers with low noise figure

Circuits and methods are described herein for controlling a bit line precharge circuit. For example, a control circuit includes a first latch circuit and a second latch circuit. The first latch circuit is configured to receive a first light sleep signal. The first latch circuit generates a second light sleep signal according to a clock signal. The second latch circuit is configured to receive the second light sleep signal. The second latch circuit generates a third light sleep signal according to a sense amplifier enable signal. The second latch circuit provides the third light sleep signal to a bit line reading switch, so the bit line reading switch is cutoff after a sense amplifier is enabled.

Circuitry for power management assertion

Systems and methods are provided for controlling a wake-up operation of a memory circuit. The memory circuit may include a memory array with a plurality of memory cells, first logic circuitry, first switching circuitry, first latch circuitry, and second switching circuitry. The first logic circuitry may be configured to generate a first bit line pre-charge signal for a first memory cell of the plurality of memory cells, where the first bit line pre-charge signal is generated in response to a sleep signal. The first switching circuitry may be configured to provide power to one or more bit line of the first memory cell in response to the first bit line pre-charge signal. The first latch circuit may receive the sleep signal and the first bit line pre-charge signal and generate a delayed sleep signal. The second logic circuitry may be configured to generate a second bit line pre-charge signal for a second memory cell of the plurality of memory cells, where the second bit line pre-charge signal is generated in response to the delayed sleep signal. The second switching circuitry may be configured to provide power to one or more bit line of the second memory cell in response to the second bit line pre-charge signal.

Systems and methods for controlling power management operations in a memory device

Systems and methods are provided for limiting a negative bit line voltage in a SRAM cell. A voltage limiter circuit may be implemented in a write driver to control the magnitude of negative voltage imposed on a bit line. The voltage limiter circuit can produce the required magnitude of negative bit line voltage at lower operating voltage levels. The voltage limiter circuit can also limit the magnitude of negative bit line voltage to not exceed a predetermined value. The reduction of the magnitude of the negative bit line voltage can reduce the active power of a SRAM cell.

Robust circuit for negative bit line generation in SRAM cells

Systems and methods for integrating injection-locked oscillators into transceiver arrays are disclosed. In one aspect, there is provided an injection-locked oscillator (ILO) distribution system including a master clock generator configured to generate a master clock signal. The ILO distribution system also includes an ILO distribution circuit including an ILO and configured to receive the master clock signal. The ILO is configured to generate a reference clock signal based on the master clock signal. The ILO distribution circuit is further configured to generate an output signal indicative of an operating frequency of the ILO. The ILO distribution system further includes an injection-locked detector (ILD) configured to receive the master clock signal and the output signal. The ILD is further configured to determine whether the ILO is in a locked state or in an unlocked state based on the master clock signal and the output signal.

Systems and methods for integration of injection-locked oscillators into transceiver arrays

Apparatus and methods for true power detection are provided herein. In certain embodiments, a power amplifier system includes an antenna, a directional coupler, and a power amplifier electrically connected to the antenna by way of a through line of the directional coupler. The power amplifier system further includes a first switch, a second switch, and a combiner that combines a first coupled signal received from a first end of the directional coupler's coupled line through the first switch and a second coupled signal received from a second end of the directional coupler's coupled line through the second switch.

Growing community of inventors

Ottawa, Canada

Sanjeev Kumar Jain