Applied Materials, Inc.

Other

Sanjeev Baluja

Juan Carlos Rocha-Alvarez

Thomas E Nowak

Tejas Ulavi

Joseph F AuBuchon

Dhritiman Subha Kashyap

Kalyanjit Ghosh

Michael Robert Rice

Scott A Hendrickson

Amit Kumar Bansal

Dale Robert Du Bois

Mayur G Kulkarni

Ashutosh Agarwal

Tuan Anh Nguyen

Kartik Bhupendra Shah

Arkaprava Dan

Alexandros T Demos

Jianhua Zhou

Dustin Wenpin Ho

Andrzei Kaszuba

Hanhong Chen

Hari K Ponnekanti

Tom K Cho

Jared Ahmad Lee

Praket Prakash Jha

Muhannad Mustafa

Mario Dave Silvetti

Prahallad Iyengar

Chaowei Wang

Karthik Janakiraman

Mandyam Sriram

Kevin Griffin

Kien Nai Chuc

Bo Xie

Yanjie Wang

Juan Carlos Rocha

Shailendra Srivastava

Andrzej Kaszuba

Sungjin Kim

Ganesh Balasubramanian

Bok Hoen Kim

Ren-Guan Duan

Yao-Hung Yang

Kenneth Brian Doering

Abhijit Ashok Kangude

Sam Hyungsam Kim

Vijay D Parkhe

Deenesh Padhi

Kelvin Chan

Hichem M'Saad

Tsutomu Tanaka

Xinhai Han

Ming Xu

Ajit Balakrishna

Derek R Witty

Dmitry A Dzilno

Wei V Tang

Sushant Suresh Koshti

Krishna Nittala

Michael Wenyoung Tsiang

Ashley M Okada

Marcel E Josephson

Hyung Jin Park

Kaushik Comandoor Alayavalli

Daping Yao

Inna Shmurun

Bozhi Yang

Kevin M Brashear

Daemian Raj

Uday Pai

Kenneth Le

Ndanka O Mukuti

Liliya Krivulina

Sang Hyuk Kim

Ryeun Kwan Kim

Jun Ma

Li-Qun Xia

Yi Yang

Jason M Schaller

Chunlei Zhang

David T Blahnik

Swaminathan T Srinivasan

Mei-Yee Shek

Vladimir Zubkov

Satish Sundar

Edward P Hammond

Matthew James Busche

Zhijun Jiang

Dale R Dubois

Karthik Ramanathan

Vivek Bharat Shah

Patrick Reilly

Alexander S Polyak

Shahid Shaikh

Surajit Kumar

Sumit Agarwal

Chi-Chou Lin

Yuxing Zhang

Chad Peterson

Gas distribution plate

Apparatus and methods to process one or more wafers are described. A spatial deposition tool comprises a plurality of substrate support surfaces on a substrate support assembly and a plurality of spatially separated and isolated processing stations. The spatially separated isolated processing stations have independently controlled temperature, processing gas types, and gas flows. In some embodiments, the processing gases on one or multiple processing stations are activated using plasma sources. The operation of the spatial tool comprises rotating the substrate assembly in a first direction, and rotating the substrate assembly in a second direction, and repeating the rotations in the first direction and the second direction until a predetermined thickness is deposited on the substrate surface(s).

Methods of operating a spatial deposition tool

Plasma showerhead assemblies are disclosed comprising a conductive plate having a plurality of the conductive plate gas openings, a dielectric faceplate having a thickness and a plurality of dielectric faceplate gas openings extending through the dielectric faceplate thickness in fluid communication with the plurality of the conductive plate gas openings. A conductive insert is disposed within at least one of the dielectric faceplate gas openings or adjacent o-rings included in the plasma showerhead assemblies.

Plasma showerhead assembly and method of reducing defects

Variable orifice valves comprising a first fixed plate, a second fixed plate and a movable plate between are described. The movable plate is connected to the first fixed plate and the second fixed plate by sealing elements. The movable plate is moved closer to or further from the first fixed plate by rotation of an actuator ring that rotates at least two rotary elements connected to the movable plate. A needle on the movable plate engages an opening in the valve to seal or open the valve to allow fluid flow. Methods of controlling flow of fluid through the variable orifice valve are also described.

High conductance variable orifice valve

Gas mixer

Pedestal heater radiators, pedestal assemblies including the pedestal heater radiators and methods of decreasing deposition non-uniformity are described. The pedestal heater radiator has a first radiator body and a second radiator body with different emissivities. The first radiator body and second radiator body are sized and positioned to decrease the heat loss differential between sides of the pedestal.

Apparatus and methods for fine planar non-uniformity improvement

Apparatus and methods to process one or more substrates are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process condition. The support assembly configured to offset the position of the substrate with respect to the processing stations.

Dithering or dynamic offsets for improved uniformity

Variable orifice check valves comprising a flange with a guide pin, spring and movable plate are described. The flange has a body with at least one guide pin opening in the top surface. A guide pin is positioned within the at least one guide pin opening and a spring is positioned around the guide pin. The movable plate has an opening and slides along the guide pins with the spring between the top surface of the flange body and the bottom surface of the movable plate.

Self-adjustable variable orifice check valve for back pressure reduction

Processing chambers, substrate supports, centering wafers and methods of center calibrating wafer hand-off are described. A centering wafer comprises a disc-shaped body having a top surface and a bottom surface defining a thickness, a center, an outer edge having an outer peripheral face, a first arc-shaped slit and a second arc-shaped slit. Embodiments of the disclosure advantageously provide the ability to use the centering wafer to monitor and control backside pressure and thereby determine the center of a substrate support prior to processing the centering wafer. The centering wafer may be centered at a plurality of different angles by rotating the centering wafer.

Centering wafer for processing chamber

Apparatus and methods for loading and unloading substrates from a spatial processing chamber are described. A support assembly has a rotatable center base and support arms extending therefrom. A support shaft is at the outer end of the support arms and a substrate support is on the support shaft. Primary lift pins are positioned within openings in the substrate support. Secondary lift pins are positioned within openings in the support arms and are aligned with the primary lift pins. An actuation plate within the processing volume causes, upon movement of the support assembly, the primary lift pins to elevate through contact with the secondary lift pins.

Apparatus and methods to transfer substrates into and out of a spatial multi-substrate processing tool

Implementations disclosed herein generally relate to systems and methods of protecting a substrate support in a process chamber from cleaning fluid during a cleaning process. The method of cleaning the process chamber includes positioning in the process chamber a cover substrate above a substrate support and a process kit that separates a purge volume from a process volume. The method of cleaning includes flowing a purge gas in the purge volume to protect the substrate support and flowing a cleaning fluid to a process volume above the cover substrate, flowing the cleaning fluid in the process volume to an outer flow path, and to an exhaust outlet in the chamber body. The purge volume is maintained at a positive pressure with respect to the process volume to block the cleaning fluid from the purge volume.

Method and system for cleaning a process chamber

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Campbell, CA, United States of America

Sanjeev Baluja