Canon Anelva Corporation

International Business Machines Corporation

Sanjay Shinde

Juntao Li

Vamsi Krishna Paruchuri

Paul Charles Jamison

Tuan Anh Vo

Yoshimitsu Kodaira

Tomoaki Osada

Takaaki Tsunoda

Embodiments include methods of forming dielectric layers. According to an exemplary embodiment, a dielectric layer may be formed by determining a desired thickness of the dielectric layer, forming a first dielectric sub-layer having a thickness less than the desired thickness by depositing a first metal layer above a substrate and oxidizing the first metal layer, and forming n (where n is greater than 1) additional dielectric sub-layers having a thickness less than the desired thickness above the first dielectric sub-layer by the same method of the first dielectric sub-layer so that a combined thickness of all dielectric sub-layers is approximately equal to the desired thickness.

Cyclical physical vapor deposition of dielectric layers

The present invention provides a method for manufacturing a resistance change element that can reduce occurrence of corrosion without increasing a substrate temperature. A laminate film that includes a high melting-point metal film and a metal oxide film, is etched using a mask under a plasma atmosphere formed using any one of a mixture gas formed by adding at least one gas selected from the group consisting of Ar, He, Xe, Ne, Kr, O, O, N, HO, NO, NO, CO and COto at least one kind of gasified compound selected from alcohol and hydrocarbon or the gas compound.

Method for manufacturing resistance change element

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San Ramon, CA, United States of America

Sanjay Shinde