Arm Limited

Sanjay Mangal

Yew Keong Chong

Rahul Mathur

Bikas Maiti

Andy Wangkun Chen

Rajiv Kumar Sisodia

Vikash

Hsin-Yu Chen

Martin Jay Kinkade

Paul Darren Hoxey

Kumaraswamy Ramanathan

Renu Rawat

George McNeil Lattimore

Bal S Sandhu

Gus Wai-Yan Yeung

Edward Martin McCombs, Jr

Pratik Ghanshambhai Satasia

Kyung Woo Kim

Yicong Li

Gaurang Prabhakar Narvekar

Hemavathi Chaya

Sai Sriharsha Manapragada

Various implementations described herein are related to a device with a first clock generator that provides a first pulse signal based on a clock signal, wherein the first clock generator has a first tracking circuit that provides a first reset signal based on the first pulse signal. The device may include a second clock generator that provides a second pulse signal based on the clock signal, wherein the second clock generator has a second tracking circuit that provides a first control signal based on the second pulse signal. Also, the device may include a third clock generator that provides a third pulse signal based on the first reset signal, wherein the third clock generator has a logic circuit that provides a second control signal based on the third pulse signal.

Clock circuitry for memory applications

Various implementations described herein refer to a device having an address bus that provides multi-port addresses from multiple ports including a first address from a first port and a second address from a second port. The device may have column contention-detection circuitry that receives the multi-port addresses from the address bus, compares the first address from the first port with the second address from the second port and provides a contention adjustment signal based on the comparison between the first address and the second address. The device may have bitline collision circuitry that receives the contention adjustment signal, senses wire-to-wire variation related to bitline coupling effects and provides a bitline collision signal based on sensing the bitline coupling effects.

Contention-adapted read-write pulse generation circuitry

Various implementations described herein are directed to an integrated circuit having first devices arranged to operate as a latch. The first devices may include inner devices and outer devices. The integrated circuit may include second devices coupled to the first devices and arranged to operate as a level shifter. The second devices may include upper devices and lower devices. The lower devices may be cross-coupled to gates of the inner devices and the upper devices. The integrated circuit may include input signals applied to gates of the outer devices and the lower devices to thereby generate output signals from the outputs of the lower devices that are applied to the gates of the inner devices and the upper devices to activate latching of the output signals.

Level shift latch circuitry

A circuit includes a bitcell array having a plurality of bitlines, and an I/O functional unit to read data stored in the bitcell array. The I/O functional unit includes a first multiplexer to select a first input port or a first bitline among a first group of bitlines, a first latch to latch the output of the first multiplexer, a second multiplexer to select a second input port or a second bitline among a second group of bitlines. The second input port is coupled to an output port of the first latch. The I/O functional unit further includes a second latch to latch the output of the second multiplexer.

Memory with a controllable I/O functional unit

Various implementations described herein refer to an integrated circuit. The integrated circuit may include memory circuitry having multiple bitcell arrays with redundant rows of bitcells. The integrated circuit may include comparator logic disposed outside the memory circuitry to de-assert access to one or more faulty rows of bitcells and to assert access to the redundant rows of bitcells.

Redundancy circuitry for memory application

Various implementations described herein are directed to an integrated circuit having level shift circuitry that receives a clock signal in a first voltage domain from a first voltage supply and provides a level shifted clock signal in a second voltage domain based on a second voltage supply that is different than the first voltage supply. The integrated circuit may include clock generator pulse circuitry that receives the clock signal in the first voltage domain from the first voltage supply and receives the level shifted clock signal in the second voltage domain from the level shift circuitry.

Clock generation circuitry for memory applications

Various implementations described herein may be directed to retention voltages for integrated circuits. In one implementation, an integrated circuit may include functional circuitry to store data bits, and may also include retention mode circuitry coupled to the functional circuitry to provide retention voltages to the functional circuitry, where the retention mode circuitry may include a first circuitry to provide a first retention voltage to the functional circuitry. The first circuitry may include a first diode device, and may include a first transistor device, a second diode device, or combinations thereof. The retention mode circuitry may also include a second circuitry to provide a second retention voltage to the functional circuitry, where the second circuitry includes second transistor devices. Further, the functional circuitry may be held in a data retention mode when the first retention voltage or the second retention voltage is provided to the functional circuitry.

Retention voltages for integrated circuits

A memory device includes an array of memory cells arranged as a plurality of rows and columns, each row being coupled to an associated read word line, and each column forming at least one column group, where the memory cells of each column group are coupled to an associated read bit line. Each column group includes circuitry to precharge the associated read bit line to a first voltage level prior to the read operation. Each memory cell has coupling circuitry connected between the associated read bit line and a second voltage level different to the first voltage level. During read operation the coupling circuitry associated with the activated memory cell selectively discharges the associated read bit line towards the second voltage level dependent on the data value stored within that activated memory cell. The clamping circuitry connects the associated read bit line to the second voltage level.

Memory device and method of controlling leakage current within such a memory device

A memory device is provided comprising an array of memory cells. During a read operation, voltage on a read bit line will transition towards a second voltage level if a data value stored in that activated memory cell has a first value, and sense amplifier circuitry will then detect this situation. If that situation is not detected, the sense amplifier circuitry determines that the activated memory cell stores a second value. Bit line keeper circuitry is coupled to each read bit line and is responsive to an asserted keeper pulse signal to pull the voltage on each read bit line towards the first voltage level. Keeper pulse signal generation circuitry asserts the keeper pulse signal at a selected time. The selected time is such that the voltage on the associated read bit line will have transitioned to the trip voltage level before the keeper pulse signal is asserted.

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Austin, TX, United States of America

Sanjay Mangal