Applied Materials, Inc.

Microsoft Technology Licensing, LLC

Signify Holding B.v.

Tata Consultancy Services Limited

Philips Lighting Holding B.v.

Tp Vision Holding B.v.

Sanjay Krupakar Bhat

Vibhu Jindal

Wen Xiao

Bijoy Raveendran

Ramesh Gururaja

Mogileswara Rao Garimidi

Saumitra Agarwal

Mark Henricus Verberkt

Jurgen Mario Vangeel

Wijnand Johannes Rietman

Vishwas Kumar Pandey

Tony Petrus Van Endert

Petrus Johannes Lenoir

Michael Petrus Franciscus Verschoor

Weimin Li

Jules Martinus Adrianus Gerardus De Laat

Lokesh Narayan

Simon Dingle

Shiyu Liu

Marcin Gramza

Azeddine Zerrade

Marcin Klecha

Tumu Sree Bharath

Abhas Sinha

Gopalakrishnan Venkateswaran

Lee Brown

Lokesh Narayan Raj Urs

Natarajan Ganapathy Subramanian

Robert Adrianus Hendrik Van Twist

Majeed Foad

Pravin K Narwankar

Son Truong Nguyen

Shuwei Liu

Kenric T Choi

Shreyas Kher

Ying Zhang

Kedarnath Sangam

Paul L Deaton

Milos Lazarevic

Avinash Achar

Catherine William Neylan

Vinodh Ramachandran

Aljosa Obuljen

Ribhu Gautam

James Richard Sturms

Miriam Schwartz

Shankar Muthukrishnan

Herng Yau Yoong

Dmitri Viktorovich Kotchetov

Binni Varghese

Naresh Jain

Nicholas Kyle Ryan

Jeet Mukeshkumar Patel

Ivan Vujic

Dusan Lukic

Marko Rakita

Vignesh Lakshmanan Kangadharan Palani Radja

Sherman Chee Ming Der

Ajit Kumar Singh

Dhiresh Kumar Nagwani

Aleksandar Sretenovic

Sanjeev Kumar Puvvada Sathyanarayana

Tamara Paunovic

Sasa Vuckovic

Sirisha Behara

Venkatasubramanian Narayanan

Padma Lakshmi Anoop Kulkarni

Sajid Saiyed

Pramod Kukhshal

Kamatchigobinath Manoharan

Vijayan Venkataraman

Rahul Sharangapani

Extreme ultraviolet (EUV) mask blanks and methods for their manufacture, and production systems therefor are disclosed. The method for forming an EUV mask blank comprises smoothing out surface defects on a surface of a substrate.

Extreme ultraviolet mask blank defect reduction

A deposition system, and a method of operation thereof are disclosed. The deposition system comprises a cathode assembly comprising a rotating magnet assembly including a plurality of outer peripheral magnets surrounding an inner peripheral magnet.

Deposition system with a multi-cathode

Methods for the manufacture of extreme ultraviolet (EUV) mask blanks and production systems therefor are disclosed. A method for forming an EUV mask blank comprises forming a bilayer on a portion of a multi-cathode PVD chamber interior and then forming a multilayer stack of Si/Mo on a substrate in the multi-cathode PVD chamber.

Extreme ultraviolet mask blank defect reduction methods

A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising an upper shield with two holes that are positioned to permit alternate sputtering from two targets.

Physical vapor deposition system and processes

Apparatus and methods for measuring surface topography are described. The analysis apparatus and methods detect light reflected from the reflective backside of a cantilever assembly including a tip, calculate a background level (BGL) value obtained from an optical scan of a reference sample using a power spectral density (PSD) value obtained from a topographical scan of a reference sample to generate a correlational coefficient between the BGL and the PSD values. The correlational coefficient between the BGL and PSD values is used to measure the BGL value of additional EUV mask blanks by a topographical scan of the EUV mask blanks using the same tip mounted to the cantilever.

Surface topography measurement apparatus and method

A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising an upper shield with two holes that are positioned to permit alternate sputtering from two targets. A process for improving reflectivity from a multilayer stack is also disclosed.

This disclosure relates generally to a method and system for dynamically predicting vehicle arrival time using a temporal difference learning technique. Due to varying uncertainties predicting vehicle arrival time and travel time are crucial elements to make the public transport travel more attractive and reliable with increased traffic volumes. The method includes receiving a plurality of inputs in real time and then extracting a plurality of temporal events from a closest candidate trip pattern using a historical database. Further, a trained temporal difference predictor model (TTDPM) is utilized for dynamically predicting the arrival time from the current location of the vehicle to the target destination based on the plurality of nonlinear features. The non-linear features and linear approximator formulation of TTDPM provides fast gradient computation improves training time. Additionally, updating the revised state information at every iteration provides better accuracy of arrival time prediction in real time.

Method and system for dynamically predicting vehicle arrival time using a temporal difference learning technique

A physical vapor deposition chamber comprising a tilting substrate support is described. Methods of processing a substrate are also provided comprising tilting at least one of the substrate and the target to improve the uniformity of the layer on the substrate from the center of the substrate to the edge of the substrate. Process controllers are also described which comprise one or more process configurations causing the physical deposition chamber to perform the operations of rotating a substrate support within the physical deposition chamber and tilting the substrate support at a plurality of angles with respect to a horizontal axis.

System and method to control PVD deposition uniformity

Physical vapor deposition target assemblies and methods of manufacturing such target assemblies are disclosed. An exemplary target assembly comprises a flow pattern including a plurality of arcs and bends fluidly connected to an inlet end and an outlet end.

Physical vapor deposition processing systems target cooling

Apparatus and methods to improve centroid wavelength uniformity of EUV mask blanks are disclosed. The apparatus and methods may utilize one or more of heating the backside and/or the front side of the EUV mask blank. Selected regions and sub regions of the EUV mask blank are selectively heated, resulting in improved centroid wavelength uniformity of EUV mask blanks.

Method and apparatus to anneal EUV mask blank

Apparatus and methods for improving flatness of extreme ultraviolet (EUV) mask blanks are disclosed. The apparatus and methods may utilize one or more of heating the backside and/or the front side of the EUV mask blank and a cooling system. Interfacial layers of the EUV mask blank are selectively heated, resulting in improved flatness of the EUV mask blanks.

Method and apparatus to improve EUV mask blank flatness

The invention provides an augmented reality device and method for assisting a user in choosing appropriate luminaire fixtures to install within their home. A user may point the camera of a mobile device toward the region or location in a room where a new luminaire is desired, and based upon data generated by an orientation determination means included within the device, an appropriate luminaire or luminaire category is selected automatically for the user from a stored catalogue or database. Once an appropriate luminaire has been chosen, it is inserted within an image captured by the camera to generate an augmented reality image depicting the luminaire fixture in place within the user's room.

Augmented reality device for visualizing luminaire fixtures

A physical vapor deposition chamber comprising a rotating substrate support having a rotational axis, a first cathode having a radial center positioned off-center from a rotational axis of the substrate support is disclosed. A process controller comprising one or more process configurations selected from one or more of a first configuration to determine a rotation speed (v) for a substrate support to complete a whole number of rotations (n) around the rotational axis of the substrate support in a process window time (t) to form a layer of a first material on a substrate, or a second configuration to rotate the substrate support at the rotation speed (v).

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Hyderabad Telangana, India

Sanjay Krupakar Bhat