Applied Materials, Inc.

Sanjay D Yadav

Tae Kyung Won

Soo Young Choi

Quanyuan Shang

Chien-Teh Kao

William Reid Harshbarger

Kam S Law

Carl A Sorensen

Shinichi Kurita

Qunhua Wang

Young Dong Lee

John M White

Beom Soo Park

Young Eun Lee

Jose Manuel Dieguez Campo

Sakae Tanaka

Dan Maydan

Robin L Tiner

Wendell T Blonigan

Suhail Anwar

Jrjyan Jerry Chen

Gaku Furuta

Lai Zhao

Ernst Keller

Shouqian Shao

Sheng Sun

Jun Li

Jeff C Olsen

Wei Chang

Surendra Kanimihally Setty

Embodiments of the present disclosure include methods and apparatus for depositing a plurality of layers on a large area substrate. In one embodiment, a processing chamber for plasma deposition is provided. The processing chamber includes a showerhead and a substrate support assembly. The showerhead is coupled to an RF power source and a ground and includes a plurality of perforated gas diffusion members. A plurality of plasma applicators is disposed within the showerhead, wherein one plasma applicator of the plurality of plasma applicators corresponds to one of the plurality of perforated gas diffusion members. Further, a DC bias power source is coupled to a substrate support assembly.

Film stress control for plasma enhanced chemical vapor deposition

Embodiments of the disclosure include methods and apparatus for electrostatically coupling a mask to a substrate support in a deposition chamber. In one embodiment, a substrate support is disclosed that includes a substrate receiving surface, a recessed portion disposed about a periphery of the substrate receiving surface, an electrostatic chuck disposed below the substrate receiving surface, and a plurality of compressible buttons disposed within a respective opening formed in the recessed portion that form an electrical circuit with the electrostatic chuck.

Substrate support for chucking of mask for deposition processes

A method of encapsulating an organic light emitting diode (OLED) is provided. The method includes generating a first plasma in a process chamber, the first plasma having an electron density of at least 10cmwhen an OLED device is positioned within the process chamber. The OLED device includes a substrate and an OLED formed on the substrate. The method further includes pretreating one or more surfaces of the OLED and substrate with the first plasma; depositing a first barrier layer comprising silicon and nitrogen over the OLED by generating a second plasma comprising silicon and nitrogen in the process chamber, the second plasma having an electron density of at least 10cm, and depositing a buffer layer over the first barrier layer; and depositing a second barrier layer comprising silicon and nitrogen over the buffer layer by generating a third plasma comprising silicon and nitrogen in the process chamber.

Thin-film encapsulation

Embodiments disclosed herein generally relate to a substrate temperature monitoring system in a substrate support assembly. In one embodiment, the substrate support assembly includes a lift pin. The lift pin has a body. The body has an interior passage and a rounded top surface configured for contacting a substrate when in use. A substrate temperature sensor disposed in the interior passage.

Substrate temperature monitoring

The present disclosure relates to a chemical vapor deposition system for processing large area substrates. The chemical vapor deposition system includes a chemical vapor deposition chamber comprising a chamber body having a plurality of sidewalls, a lid assembly, and a bottom. A substrate support extends upward from the bottom within the chamber body. A gas distribution plate is located within the lid assembly. One or more cleaning gas injector ports coupled to corresponding one or more inlets in the plurality of sidewalls. Each of the one or more cleaning gas injector ports has a substantially oval-shaped or circular-shaped cleaning gas nozzle configured to provide reactive species from a remote plasma source to clean an underside of the gas distribution plate.

Remote plasma source cleaning nozzle for cleaning a gas distribution plate

The present disclosure relates to a corner spoiler designed to decrease high deposition rates on corner regions of substrates by changing the gas flow. In one embodiment, a corner spoiler for a processing chamber includes an L-shaped body fabricated from a dielectric material, wherein the L-shaped body is configured to change plasma distribution at a corner of a substrate in the processing chamber. The L-shaped body includes a first and second leg, wherein the first and second legs meet at an inside corner of the L-shaped body. The length of the first or second leg is twice the distance defined between the first or second leg and the inside corner. In another embodiment, a shadow frame for a depositing chamber includes a rectangular shaped body having a rectangular opening therethrough, and one or more corner spoilers coupled to the rectangular shaped body at corners of the rectangular shaped body.

Corner spoiler for improving profile uniformity

Embodiments of the present disclosure generally describe a method for depositing a barrier layer of SiN using a high density plasma chemical vapor deposition (HDP-CVD) process, and in particular, controlling a film stress of the deposited SiN layer by biasing the substrate during the deposition process.

CVD thin film stress control method for display application

The present invention generally relates to organic light emitting diode (OLED) structures and methods for their manufacture. To increase the lifetime of an OLED structure, an encapsulating layer may be deposited over the OLED structure. The encapsulating layer may fully enclose or 'encapsulate' the OLED structure. The encapsulating layer may have a substantially planar surface opposite to the interface between the OLED structure and the encapsulating layer. The planar surface permits successive layers to be evenly deposited over the OLED structure. The encapsulating layer reduces any oxygen penetration into the OLED structure and may increase the lifetime of the OLED structure.

Water-barrier encapsulation method

A shadow frame and framing system for semiconductor fabrication equipment comprising a rectangular frame having four edges, the edges forming an interior lip with a top surface and an bottom engagement surface; and a cross beam disposed between at least two edges of the frame, the cross beam having a top surface and a bottom engagement surface, the engagement surface of the cross beam configured to be flush with the engagement surface of the lip; wherein one or more of the engagement surfaces are configured to cover metal interconnect bonding areas on a carrier disposed below the frame. The shadow frame is particularly useful in plasma enhanced chemical vapor deposition (PECVD) applications used to make active matrix liquid crystal displays (AMLCDs) and solar cells.

Shadow frame with cross beam for semiconductor equipment

A method and apparatus for depositing a material layer onto a substrate is described. The method includes delivering a mixture of precursors for the material layer into a process chamber and depositing the material layer on the substrate at low temperature. The material layer can be used as an encapsulating layer for various display applications which require low temperature deposition process due to thermal instability of underlying materials used. In one aspect, the encapsulating layer includes one or more material layers (multilayer) having one or more barrier layer materials and one or more low-dielectric constant materials. The encapsulating layer thus deposited provides reduced surface roughness, improved water-barrier performance, reduce thermal stress, good step coverage, and can be applied to many substrate types and many substrate sizes. Accordingly, the encapsulating layer thus deposited provides good device lifetime for various display devices, such as OLED devices. In another aspect, a method of depositing an amorphous carbon material on a substrate at low temperature is provided. The amorphous carbon material can be used to reduce thermal stress and prevent the deposited thin film from peeling off the substrate.

Water-barrier performance of an encapsulating film

A method for depositing a carbon-containing material layer onto a substrate includes delivering a mixture of precursors for the carbon-containing material layer into a process chamber, doping the carbon-containing material layer with silicon, and depositing the carbon-containing material layer at low temperature. In one aspect, improved light transmittance of the carbon-containing material layer at all wavelengths of a visible light spectrum is obtained. In addition, a method for depositing an encapsulating layer is provided for various display applications which require low temperature deposition process due to thermal instability of underlying materials used. The encapsulating layer may include one or more barrier layer material layers and one or more amorphous carbon material layers. The amorphous carbon material can be used to reduce thermal stress and prevent the deposited thin film from peeling off the substrate.

Growing community of inventors

San Jose, CA, United States of America

Sanjay D Yadav