Samsung Electronics Co., Ltd.

Hyundai Motor Company

Kia Motors Corporation

Sungkyunkwan University

Sangyun Kim

Youngsik Kim

Seunghyun Cho

Younghun Seo

Gongheum Han

Sunggeun Do

Junghwan Park

Jaeseok Park

Dongin Kim

Myungkyu Lee

Sunghye Cho

Kyungryun Kim

Chongmin Lee

Youngho Ryu

Sungku Yeo

Yeonkyu Choi

Kangyoon Lee

Hyejung Kwon

Ji Sung Park

Jae Ik Ahn

Hamed Abbasizadeh

Hoseok Lee

Kangsub Jeong

A memory core circuit includes: (i) a memory cell array having sub cell arrays therein, and (ii) a core control circuit having sub peripheral circuits therein, such that each sub peripheral circuit extends underneath a corresponding sub cell array. Each sub cell array includes memory cells respectively connected to wordlines and bitlines. Each sub peripheral circuit includes sub wordline drivers configured to drive the wordlines, bitline sense amplifiers configured to sense voltages of the bitlines, a row decoding circuit configured to control the sub wordline drivers to select one of the wordlines, a power circuit configured to supply power to each sub peripheral circuit, and a control circuit configured to control operation of each sub peripheral circuit. By using a CoP structure that efficiently provides the core control circuit, the size of the memory core circuit may be reduced and a design margin may be enhanced.

Memory core circuits having cell-on-periphery structures and memory devices including the same

A memory device includes a word line driver circuit, which can advantageously reduce gate stress on a transistor using a lower high voltage that varies with a command, and an operating method of the memory device. The memory device includes a plurality of memory blocks, provides a high voltage or the lower high voltage to a variable high voltage line in response to a block select signal, and changes a level of the lower high voltage to a low voltage level, a medium voltage level, or a high voltage level based on the command. The memory device applies the lower high voltage to gates of P-type metal oxide semiconductor (PMOS) transistors connected to a word line driving signal, which drives word lines of non-selected memory blocks among the plurality of memory blocks.

Word line driver circuits for memory devices and methods of operating same

An electronic device according to various embodiments of the present invention comprises: a receiving circuit for outputting an AC power received wirelessly; and a rectifier circuit for rectifying the AC power being output from the power receiving circuit. The rectifier circuit comprises a forward rectifier circuit and a reverse rectifier circuit. A first terminal of the forward rectifier circuit is connected to the receiving circuit and the reverse rectifier circuit, a second terminal of the forward rectifier circuit is connected to an output terminal, and the forward rectifier circuit comprises first transistors for rectifying the AC power during a first period. A first terminal of the reverse rectifier circuit is connected to the receiving circuit and the forward rectifier circuit, a second terminal of the reverse rectifier circuit is connected to a ground, and the reverse rectifier circuit can comprise second transistors for preventing the AC power from being transmitted to the forward rectifier circuit during a second period.

Electronic device for receiving power wirelessly and method for operating same

A memory device includes: a first circuit; a second circuit; and an adaptive body bias generator configured to receive frequency detection information or temperature detection information, to apply a first forward body bias or a first reverse body bias to the first circuit in response to the frequency detection information or the temperature detection information, and to apply a second forward body bias or a second reverse body bias to the second circuit in response to the frequency detection information or the temperature detection information.

Memory device and an operating method thereof

A semiconductor memory device includes a memory cell array, an ECC engine, a voltage generator and a control logic circuit. The memory cell array includes a plurality of memory cells coupled to word-lines and bit-lines, and a plurality of sense amplifiers to sense data stored in the plurality of memory cells. The ECC engine reads memory data from a target page of the memory cell array, performs an ECC decoding on the memory data, detects, based on the ECC decoding, an error in the memory data, and outputs error information associated with the error. The voltage generator provides driving voltages to the plurality of sense amplifiers, respectively. The control logic circuit controls the ECC engine, and controls the at least one voltage generator to increase an operating margin of each of the plurality of sense amplifiers based on error pattern information including the error information.

Semiconductor memory devices including sense amplifier adjusted based on error information

An automatic belt tensioner for a hybrid vehicle is disclosed. The automatic belt tensioner includes an arm body including an upper arm on which first and second idlers are mounted and a lower arm on which a third idler is mounted. The automatic belt tensioner further includes a spring provided between the upper arm and the lower arm and providing elastic force for relative longitudinal movement of the upper arm and the lower arm, and a rail bracket mounting the arm body on an engine and guiding relative longitudinal vertical motion of the arm body.

Triple pulley belt auto tensioner and engine provided with the same

A variable valve lift apparatus includes a lever body having a set length for a lever motion. One end of the lever body is connected with a hydraulic pressure supply portion and another end thereof is connected with the valve. A rotation shaft is disposed such that a width direction of the lever body is a length direction of the rotation shaft. A roller rotates around the rotation shaft. A high cam is disposed at the camshaft to rotate together with the camshaft and has a lobe shape for rolling-contact the roller to realize a high lift. A low cam is disposed at the camshaft to rotate together with the camshaft and has a lobe shape for rolling-contacting the roller to realize a low lift. The roller is disposed to slide along the length direction of the rotation shaft and selectively rolling-contact with the high cam or the low cam by sliding.

Variable valve lift apparatus

A variable valve lift apparatus for changing a lift of an intake or exhaust valve in at least two stages may include a lever body, a piston, a cylinder, a hydraulic pressure chamber, an active portion, a hinge portion, a roller, a rotation shaft, a guide slot, a hydraulic pressure supply portion, and an elastic member, in which the lever body may make a lever motion at an end with the intake valve or the exhaust valve connected thereto, the piston may make reciprocal motion in the cylinder, the rotation shaft may pass through the hinge portion and the roller and be a rotation center of the roller, moving together with the roller, the hydraulic pressure supply portion may supply hydraulic pressure to the hydraulic pressure chamber for moving the piston, and the elastic member may return the piston if the hydraulic pressure being supplied to the hydraulic pressure chamber is removed.

A variable valve lift apparatus may include a camshaft, a cam lobe including at least one low lift cam and at least one high lift cam, and formed or mounted on an exterior circumference of the camshaft, and a cam follower opening a valve with a low lift or a high lift or closing the valve by a rotation of the camshaft. The cam follower may include a valve lift body pivoting on one side and opening or closing the valve by the cam lobe when the camshaft rotates, a bearing shaft fixedly mounted in the valve lift body, and at least one rolling bearing rotatably mounted on the bearing shaft and being movable axially on the bearing shaft to make contact selectively with the low lift cam or the high lift cam.

Growing community of inventors

Hwaseong-si, South Korea

Sangyun Kim