Lg Innotek Co., Ltd.

Lg Display Co., Ltd.

Lg Electronics Inc.

Sangyoul Lee

HyeonHo Son

Hwankuk Yuh

Hyeonho Son

HwanHee Jeong

JuneO Song

KwangKi Choi

HanSaem Kang

SoonJae Hwang

Chulwoo Lee

DaeWoong Chun

KyungHan Seo

Seung Ouk Noh

JiHyung Moon

ChungSong Kim

Hansaem Kang

Kyunghan Seo

Disclosed are an organic light emitting display panel and an organic light emitting display device including the same, in which a pixel driving circuit of a subpixel, sharing an anode with a white subpixel, of subpixels configuring a unit pixel is disconnected from the outside of the subpixel.

Mitigating shorted pixels in an organic light emitting display panel

Disclosed is a light emitting diode display device in which a time taken in a process of connecting a light emitting device to a pixel circuit is shortened. The light emitting diode display device includes a thin film transistor (TFT) array substrate including a concave portion and a light emitting device disposed in the concave portion. The light emitting device includes a first electrode and a second electrode. The light emitting device further includes a first portion, including the first and second electrodes, and a second portion opposite to the first portion, and a distance between the first portion to a floor surface of the concave portion is greater than a distance between the second portion to the floor surface of the concave portion.

Display device having light emitting diode disposed in the concave portion of the planarization layer

A light emitting device package according to one exemplary embodiment includes a sealing material and organic particles. The organic particles enhance a heat discharge rate and thus reliability of the light emitting device package due to excellent thermal characteristics thereof. Moreover, the organic particles achieve an optical distribution effect to enhance light extraction efficiency of the light emitting device package.

Light emitting device package

A method for manufacturing a light emitting device is disclosed. The disclosed method includes forming a first-conductivity-type semiconductor layer over a first substrate such that a first surface of the first-conductivity-type semiconductor layer is adjacent to the first substrate, disposing a second substrate on a second surface of the first-conductivity-type semiconductor layer opposite the first surface, separating the first substrate, disposing a third substrate on the first surface, separating the second substrate, and forming an active layer and a second-conductivity-type semiconductor layer over the second surface. In accordance with the method, it is possible to use a relatively inexpensive substrate. As a semiconductor layer is formed over a Ga-face of a gallium nitride semiconductor layer, an increase in light emission efficiency is achieved.

Method for manufacturing light emitting device having an active layer formed over a Ga-face

Disclosed is a light emitting device according to the present embodiment, which includes, a substrate; a first electrode layer disposed on the substrate; a light emitting structure disposed on the first electrode layer, which includes a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer placed between the first and second conductive semiconductor layers; and a conductive layer, which includes a base conductive layer disposed under the substrate, a body connected to the base conductive layer while passing through the substrate and the first electrode layer, and a head disposed on top of the first electrode layer. Accordingly, the light emitting device is capable of improving light extraction efficiency and include a conductive layer to provide a carrier as well as a semiconductor layer, which are securely formed on the device.

Light emitting device

Growing community of inventors

Seoul, South Korea

Sangyoul Lee