Samsung Electronics Co., Ltd.

Sangyoon Kim

Jaewon Lee

Kyungmin Lee

Namhoon Kim

Jongyoub Ryu

Changwoo Han

Chiyoun Park

Youngho Han

Heedon Jeong

Je-min Yoo

Jonguk Yoo

Jongmil Youn

Hyeontaek Lim

Hwasung Rhee

Minkyu Shin

Woosik Kim

Dokyun Lee

Donguk Jung

Aahwan Kudumula

Heesung Shim

Joosung Moon

Provided are an electronic device capable of providing text information corresponding to a user voice through a user interface and a method of controlling the electronic device. Specifically, an electronic device according to the present disclosure, when an image including at least one object is obtained, analyzes the image to identify the at least one object included in the image, and when a user voice is received, performs voice recognition on the user voice to obtain text information corresponding to the user voice, then identifies an object corresponding to the user voice among the at least one object included in the image, and displays a memo user interface (UI) including text information on an area corresponding to the object identified as corresponding to the user voice among areas on a display.

Electronic device and method of controlling electronic device

Disclosed is a method of controlling an electronic apparatus. The method of controlling an electronic apparatus includes: displaying a screen including an input area configured to receive a text, receiving a speech and obtaining a text corresponding to the speech, performing a service operation corresponding to the input area by inputting the obtained text to the input area, and based on a result of performing the service operation, obtaining a plurality of similar texts including a similar pronunciation with the obtained text, and repeatedly performing the service operation by sequentially inputting the plurality of obtained similar texts to the input area.

Electronic apparatus and controlling method thereof

An image sensor is provided. The image sensor includes a pixel array in which a plurality of pixels are arranged, wherein each of the plurality of pixels includes a photodiode; a floating diffusion node configured to integrate photocharges generated in the photodiode; a first sampling transistor electrically connected to a first node; a first capacitor electrically connected to a first node and configured to store a charge corresponding to a voltage of the floating diffusion node which is reset; a second sampling transistor electrically connected to a second node; a second capacitor electrically connected to the second node and configured to store a charge corresponding to a voltage of the floating diffusion node in which the photocharges are integrated; and at least one mode transistor configured to adjust an equivalent capacitance of each of the first node and the second node according to a mode control signal.

Image sensor

Provided are a device for recognizing a speech input including a named entity from a user and an operating method thereof. The device is configured to: generate a weighted finite state transducer model by using a vocabulary list including a plurality of named entities; obtain a first string from a speech input received from a user, by using a first decoding model; obtain a second string by using a second decoding model that uses the weighted finite state transducer model, the second string including a word sequence, which corresponds to at least one named entity, and an unrecognized word sequence not identified as a named entity; and output a text corresponding to the speech input by substituting the unrecognized word sequence of the second string with a word sequence included in the first string.

Device for recognizing speech input from user and operating method thereof

A semiconductor device includes a substrate with a NMOS region and a PMOS region, a device isolation layer on the substrate to define active fins, and gate patterns on the substrate to have a length direction crossing the active fins, wherein the device isolation layer includes diffusion brake regions between respective pairs of the active fins, the diffusion brake regions being disposed adjacent to each other in a width direction of the gate patterns, and wherein a width of the diffusion brake region in the NMOS region is different from a width of the diffusion brake region in the PMOS region.

Semiconductor device with fin field effect transistors

Semiconductor device with fin field effect transistors having different separation regions between fins in NMOS and PMOS regions

Growing community of inventors

Suwon-si, South Korea

Sangyoon Kim