Samsung Electronics Co., Ltd.

Sangyeol Kang

Gihee Cho

Jungoo Kang

Kyuho Cho

Hyunsuk Lee

Suhwan Kim

Hyun-Suk Lee

Young-Lim Park

Jin-Su Lee

Jiwoon Park

Jong-Bom Seo

Sunmin Moon

Sanghyuck Ahn

Taekyun Kim

Jun-Noh Lee

Hongsik Chae

Joohyun Jeon

Eunsun Kim

Daehyun Kim

Hiroki Sato

Naoki Yamada

Younsoo Kim

Kyooho Jung

Younjoung Cho

Tsubasa Shiratori

Jaehyoung Choi

Kongsoo Lee

Joonsoo Park

Kivin Im

Badro Im

Dongkak Lee

Hyosik Mun

Youngkuk Kim

Chin Moo Cho

Yoonchul Cho

Bonghyun Kim

Chayoung Yoo

Semiconductor devices including a capacitor and methods of forming the same are provided. The semiconductor devices may include a capacitor that include a lower electrode, an upper electrode on the lower electrode, and a dielectric layer extending between the lower electrode and the upper electrode. The lower electrode may include a doped region that contacts the dielectric layer, and the doped region of the lower electrode is configured to increase a capacitance of the capacitor.

Semiconductor devices including capacitor and methods of manufacturing the semiconductor devices

A semiconductor device and a method of manufacturing the same, the device including a plurality of lower electrodes on a semiconductor substrate; a support pattern connecting the lower electrodes at sides of the lower electrodes; and a dielectric layer covering the lower electrodes and the support pattern, wherein each of the plurality of lower electrodes includes a pillar portion extending in a vertical direction perpendicular to a top surface of the semiconductor substrate; and a protrusion protruding from a sidewall of the pillar portion so as to be in contact with the support pattern, the pillar portion includes a conductive material, the protrusion includes a same conductive material as the pillar portion and is further doped with impurities.

Semiconductor device

Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device includes forming a first electrode, forming a preliminary dielectric layer on the first electrode, forming a second electrode on the preliminary dielectric layer, and at least partially phase-changing the preliminary dielectric layer to form a dielectric layer. An interfacial energy between the first electrode and the dielectric layer may be less than an interfacial energy between the first electrode and the preliminary dielectric layer.

A capacitor includes a first electrode and a second electrode spaced apart from each other, a dielectric layer disposed between the first electrode and the second electrode, and a seed layer disposed between the first electrode and the dielectric layer. The dielectric layer includes a dielectric material having a tetragonal crystal structure. The seed layer includes a seed material that satisfies at least one of a lattice constant condition or a bond length condition.

Capacitor, semiconductor device and methods of manufacturing the capacitor and the semiconductor device

A method for manufacturing a semiconductor device may include forming contact pads spaced apart from each other in a first direction on a substrate and between first insulating patterns; forming first holes between the first insulating patterns and having bottom ends adjacent top surfaces of the contact pads; forming second holes between second insulating patterns and overlapping with partial portions of the first holes in a second direction perpendicular to the first direction; and forming a bottom electrode layer including first portions to cover the bottom ends of the first holes and sidewalls of the second holes. In forming the first and second holes, the first and second holes are formed simultaneously.

Semiconductor device including capacitor and method of manufacturing the same

Carbon-containing patterns are formed on an etch target layer, side surfaces of the carbon-containing patterns are treated by a hydrophilic process, poly-crystalline silicon spacers are formed on the side surfaces of the carbon-containing patterns after the hydrophilic process has been performed, and the etch target layer is patterned using the poly-crystalline silicon spacers as an etch mask.

Methods for manufacturing a semiconductor device

A trialkylsilane-based silicon precursor compound may be expressed by Si(R)X, i=1-3, where each of 'R', 'R', and &#x201c;R&#x201d; is a hydrogen or an alkyl having 1-5 carbon(s), all of &#x201c;R&#x201d;, &#x201c;R&#x201d;, and &#x201c;R&#x201d; are not hydrogen, &#x201c;X&#x201d; is one of hydrogen, a hydroxyl group, an amide group, an alkoxide group, a halide group, or Si(R*), and &#x201c;R*&#x201d; is a hydrogen or an alkyl group having 1&#x2dc;5 carbon(s).

Method of forming a layer using a trialkylsilane silicon precursor compound

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Yongin-si, South Korea

Sangyeol Kang