Samsung Electronics Co., Ltd.

Samsung Sdi Co., Inc.

Sangyeob Lee

Jaeho Lee

Jinseong Heo

Seongjun Park

Eunkyu Lee

Kiyoung Lee

Yoonhyun Kwak

Hyeonho Choi

Jiwhan Kim

Ohyun Kwon

Soyeon Kim

Sangdong Kim

Kyuyoung Hwang

Banglin Lee

Sunyoung Lee

Seungyeon Kwak

Jongwon Choi

Jungin Lee

Daeyoung Chung

Hyun Woo Koo

Youngkwon Kim

Kyuhyun Im

Kumhee Lee

An organic light-emitting device (OLED) includes a first electrode, a second electrode, an emission layer between the first electrode and the second electrode and including an electron-transporting host and a hole-transporting host, a hole transport region between the first electrode and the emission layer and including a hole transport layer, and an electron transport region between the emission layer and the second electrode and including an electron transport layer, wherein the OLED satisfies Equations 1 and 2 below:0.75 eV&#x2264;|LUMO&#x2212;LUMO|&#x2264;0.90 eV&#x2003;&#x2003;&#x3c;Equation 1&#x3e;|()&#x2212;(|&#x3c;0.15 eV&#x2003;&#x2003;&#x3c;Equation 2&#x3e; wherein in Equations 1 and 2, LUMOrefers to a lowest unoccupied molecular orbital (LUMO) energy level of the electron-transporting host, LUMOrefers to an LUMO energy level of the hole-transporting host, E(S) refers to a singlet energy level of the electron-transporting host, and E(S) refers to a singlet energy level of the hole-transporting host.

Organic light-emitting device

An organic light-emitting device (OLED) includes a first electrode, a second electrode, an emission layer between the first electrode and the second electrode and including an electron-transporting host and a hole-transporting host, a hole transport region between the first electrode and the emission layer and including a hole transport layer, and an electron transport region between the emission layer and the second electrode and including an electron transport layer, wherein the OLED satisfies Equations 1 and 2 below:0.75 eV&#x2264;||&#x2264;0.90 eV&#x2003;&#x2003;&#x3c;Equation 1&#x3e;|()&#x2212;()|&#x3c;0.15 eV&#x2003;&#x2003;&#x3c;Equation 2&#x3e;

A condensed cyclic compound represented by Formula 1: wherein in Formula 1, groups and variables are the same as defined in the specification.

Condensed cyclic compound and organic light emitting device including the same

An image sensor may include visible light detectors and a near-infrared light detector. The near-infrared light detector may contain a material highly sensitive to near-infrared rays, and thus the size of the near-infrared light detector may be reduced.

Image sensor including visible and near-infrared light detectors and method of manufacturing the same

An organometallic compound represented by Formula 1:M(L)(L),&#x2003;&#x2003;Formula 1wherein M is selected from iridium (Ir), platinum (Pt), osmium (Os), titanium (Ti), zirconium (Zr), hafnium (Hf), europium (Eu), terbium (Tb), thulium (Tm), and rhodium (Rd), and wherein Lis a ligand represented by Formula 2A and Lis a ligand represented by Formula 2B, and wherein Land Lin Formula 1 are different from each other, 

Organometallic compound and organic light-emitting device including the same

A photodetector includes an insulating layer on a substrate, a first graphene layer on the insulating layer, a 2-dimensional (2D) material layer on the first graphene layer, a second graphene layer on the 2D material layer, a first electrode on the first graphene layer, and a second electrode on the second graphene layer. The 2D material layer includes a barrier layer and a light absorption layer. The barrier layer has a larger bandgap than the light absorption layer.

Photodetector using bandgap-engineered 2D materials and method of manufacturing the same

A method of manufacturing a flexible device including a two-dimensional (2D) material, e.g., graphene, includes forming a dielectric layer on a first substrate, forming a two-dimensional (2D) material layer on the dielectric layer; forming a pattern in the 2D material layer, forming a second substrate on the dielectric layer and the 2D material layer, the first substrate including a flexible material, removing the first substrate, and forming a source electrode, a drain electrode, and a gate electrode on the dielectric layer.

Flexible device including two-dimensional material and method of manufacturing the same

A photoelectronic device includes a semiconductor substrate doped with a first type impurity, a second semiconductor layer doped with a second type impurity of an opposite type to the first type impurity, a transparent electrode formed on a second surface of the second semiconductor layer, the second surface being opposite a first surface on which the semiconductor substrate is formed, and a barrier layer disposed between the second semiconductor layer and the semiconductor substrate or between the second semiconductor layer and the transparent electrode. The second semiconductor layer has a band gap energy less than that of the semiconductor substrate, and the barrier layer includes a semiconductor material or an insulator having a band gap greater than that of the semiconductor substrate.

Photoelectronic device including charge barrier

A carbazole-based compound represented by Formula 1A and 1B: 

Carbazole-based compound and organic light-emitting device including the same

Example embodiments relate to semiconductor devices including two-dimensional (2D) materials, and methods of manufacturing the semiconductor devices. A semiconductor device may be an optoelectronic device including at least one doped 2D material. The optoelectronic device may include a first electrode, a second electrode, and a semiconductor layer between the first and second electrodes. At least one of the first electrode and the second electrode may include doped graphene. The semiconductor layer may have a built-in potential greater than or equal to about 0.1 eV, or greater than or equal to about 0.3 eV. One of the first electrode and the second electrode may include p-doped graphene, and the other may include n-doped graphene. Alternatively, one of the first electrode and the second electrode may include p-doped or n-doped graphene, and the other may include a metallic material.

Semiconductor device including two-dimensional material, and method of manufacturing the semiconductor device

A condensed cyclic compound represented by one of Formulae 1A to 1C, wherein Formulae 1A to 1C are disclosed in the detailed description.

Condensed cyclic compound and organic light-emitting device including the same

An optical device including a two-dimensional material and a method of manufacturing the same are provided. The optical device may include a barrier stack formed on a bottom channel layer, a top channel layer formed on the barrier stack, a drain electrode connected to the bottom channel layer, a source electrode formed on a substrate. The barrier stack may include two or more barrier layers, and one or more channel units at least partially interposing between the barrier layers. Channel units connected to the drain electrode and channel units connected to the source electrode may be formed, in an alternating sequence, between barrier layers included in the barrier stack. The barrier layers may each have a thickness which is less than a distance which may be traveled by electrons and holes generated by photo absorption prior to recombination. As a result, the optical device may provide improved photo separation efficiency.

Optical device including two-dimensional material and method of manufacturing the same

An organometallic compound represented by Formula 1:M(L)(L)&#x2003;&#x2003;Formula 1

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Hwaseong-si, South Korea

Sangyeob Lee