Lg Electronics Inc.

Samsung Electronics Co., Ltd.

Ajou University Industry-Academic Cooperation Foundation

Shangrao Jinko Solar Technology Development Co., Ltd

Shangrao Xinyuan Yuedong Technology Development Co. Ltd.

Jingao Solar Co., Ltd.

Sangwook Park

Seunghwan Shim

Kyoungsoo Lee

Younghyun Lee

Jinhyung Lee

Kisu Kim

Seounghwan Seol

Yeonho Lee

Kookjin Yeo

Yoonsil Jin

Kyoungmin Kim

Sungdo Kim

Donggeon Kim

Inseok Baek

Yuju Hwang

Myeongsik Ryu

Ara Kim

Heejin Nam

Donghwan Lim

Hakho Choi

Junhong Kang

Bokyeon Won

Eunae Yoon

Jeeho Yom

Donghyun Kim

Sung Do Kim

Wonseok Joo

Minho Choi

Jungmin Ha

Dongsung Kim

Sukho Hong

Gyeayoung Kwag

Jonggi Lee

Minchul Lee

Seokjae Lee

Dongyun Yeo

Jaihyung Won

Eunhye Youn

Wonchul Lim

Youngbin Shin

Sungsu Kim

Dohyung Kwon

Sanghwon Jung

Kyeongmo Koo

Hak-Ho Choi

Hyeonill Um

Ji Woong Yang

Kangmin Jung

Jinsu Nam

Sang-Hyun Park

Jung-Hwan Kim

Hyun Kyung Kim

Junyong Ahn

Chungsun Lee

Juhwa Cheong

Il Hwan Kim

Young-ju Lee

Taeje Cho

Bok-Yeon Won

Sunghyun Hwang

Keonwoo Kim

Kwang-Chul Choi

Kwang-Hyun Baek

Seungyoon Lee

Manhyo Ha

Teakhoon Lee

Ilyoung Han

Jongjin Lee

Dongho Shin

Chang-Seong Jeon

Daeyong Lee

Jung-Seok Ahn

Seungwon Shin

Munjo Kim

Yujin Lee

Myungsoo Noh

Mincheol Kang

Byeongsang Kim

Jiwoong Yang

Chanpyo Park

Byoung-Soo Kwak

Wooram Kim

Minji Park

Horang Jang

Youngeun Kim

Eungsu Kim

Daehyun Lee

Heungsuk Oh

Sangdon Jang

Geunsik Oh

Bumoh Park

Youngdeok Kwon

Heewon Min

Sungyeon Cho

Hyanjung Lee

Dong Gun Kam

Taekyu Son

Youngsu Kim

Junhyuk Jung

Sunhyuk Jung

According to an example embodiment of the present disclosure, there is provided a self-building kit system including a first kit. The first kit includes: first modules of a first shape having two modules disposed opposite each other, and each including one or more first fitting portions cut out to a first length (d1) in the direction of the center thereof; and second modules of a second shape having N (N is a natural number) modules disposed between the two first modules, and each including one or more second fitting portions cut out to a second length (d2) in the direction of the center thereof. The second length (d2) is equal to or shorter than the first length (d1).

Self-building kit system

A wooden structure building self-constructing method includes the operations of: (a) assembling a first kit by disposing N (N is a natural number) second modules of a second shape each including one or more second fitting portions cut out to a second length (d2) in the direction of the center thereof between two first modules of a first shape each including one or more first fitting portions cut out to a first length (d1) in the direction of the center thereof; and (b) assembling a second kit by disposing N fourth modules of a fourth shape each including one or more fourth fitting portions cut out to a fourth length (d4) in the direction of the center thereof between two third modules of a third shape each including one or more third fitting portions cut out to a third length (d3) in the direction of the center thereof.

Wooden structure building self-constructing method

Disclosed is a plasma processing apparatus comprising a plasma electrode, an electrostatic chuck, and a diode board. The electrostatic chuck includes a microheater layer and a chuck electrode. The microheater layer includes an inner heater part and an outer heater part. The inner heater part includes a first inner heater in a first inner region that circumferentially surrounds a center of the microheater layer, and a second inner heater in a second inner region that circumferentially surrounds the first inner region. The outer heater part includes a first outer heater in a first outer region that circumferentially surrounds the second inner region, and a second outer heater in a second outer region that circumferentially surrounds the first outer region. A distance between centers of the first and second outer heaters is less than that between centers of the first and second inner heaters.

Plasma processing apparatus and semiconductor fabrication method using the same

An optical proximity correction method of a lithography system includes dividing a transmission cross coefficient (TCC) for each slit region; generating an optical proximity correction (OPC) model to which the divided TCC is applied; measuring an apodization value for each slit position; fitting critical dimension (CD) data for each slit position to a simulation CD of the OPC model; and correcting the OPC model using the fitted CD data.

Optical proximity correction method and mask manufacturing method of lithography system

A hub device, a multi-device system including the hub device, and a method of operating the same may include: converting, by the hub device, received voice input into text; identifying, by the hub device, a device capable of performing an operation corresponding to the text; identifying which device stores a function determination model corresponding to the device capable of performing the operation corresponding to the text, from among the hub device, and a plurality of other devices connected to the hub device; and based on the identified device that stores the function determination model being a device that is different from the hub device, transmitting at least part of the text to the identified device.

Hub device, multi-device system including the hub device and plurality of devices, and method of operating the same

A system and method for providing a voice assistant service for text including an anaphor are provided. A method, performed by an electronic device, of providing a voice assistant service includes: obtaining first text generated from a first input, detecting a target word within the first text and generating common information related to the detected target word, using a first natural language understanding (NLU) model, obtaining second text generated from a second input, inputting the common information and the second text to a second NLU model, detecting an anaphor included in the second text and outputting an intent and a parameter, based on common information corresponding to the detected anaphor, using the second NLU model, and generating response information related to the intent and the parameter.

System and method for providing voice assistant service regarding text including anaphora

A memory device includes a first sub wordline driver including a first active region connected to a first wordline through a first direct contact, and a first transistor connected to a first gate line, the first gate line and the first wordline extending in a first direction, and a second sub wordline driver including a second active region connected to a second wordline through a second direct, the second direct contact and first direct contact extending in parallel in a second direction, the second direction being perpendicular to the first direction. A second transistor is connected to a second gate line. The second gate line extends in the first direction. A third wordline driven by a third sub wordline driver is between the first wordline and the second wordline.

Memory device having sub wordline driver

Disclosed are an electronic device and a method for controlling thereof. According to an embodiment, a method for controlling an electronic apparatus includes: obtaining a voice command while a first application is executed in foreground; obtaining a text by recognizing the voice command; identifying at least one second application to perform the voice command based on the text; based on information of the first application and the at least one second application; identify whether to execute each of the first application and the at least one second application in the foreground or background of the electronic apparatus; and providing the first application and the at least one second application based on the identification.

Electronic apparatus and method for controlling electronic apparatus

An electronic device includes a system on chip (SoC) and a power management integrated circuit (PMIC). The SoC includes a plurality of power domains and a dynamic voltage and frequency scaling (DVFS) controller which performs DVFS on the power domains The PMIC includes direct current (DC)-DC converters and a control logic which controls the plurality of DC-DC converters, and each of the DC-DC converters provides a corresponding output voltage to a respective one of the power domains. The control logic designates a target DC-DC converter which provides a target output voltage having a target level as a global DC-DC converter and provides the target output voltage to a power domain corresponding the global DC-DC converter and to at least one first power domain consuming the target output voltage, from among the plurality of power domains, by sharing the target output voltage provided by the global DC-DC converter.

Electronic devices and methods of controlling power in electronic devices

A lift apparatus for moving an object up and down in a substrate processing apparatus, the lift apparatus including a body configured to support the object while a lift hole, included in the body, is overlapped by the object in a vertical direction; a lift pin configured to move the object up and down by moving up and down in the lift hole; a bellows including an upper flange, a lower flange, and a flexible pipe; a connector combined with a lower portion of the lift pin in the flexible pipe and configured to interfere with downward movement of the lift pin and to allow at least one from among rotation, sliding, and tilting of the lift pin; a load sensor configured to measure vertical load generated in accordance with movement of the lift pin; and an actuator configured to move the lift pin up and down.

Lift apparatus and substrate processing apparatus including the same

A memory device includes a memory cell array, a row address decoder configured to generate a plurality of main word line driving signals and a plurality of sub word line driving signals, based on an odd signal representing that a main word line driving signal driving an odd word line is activated, generate a plurality of encoded sub word line driving signals used for driving a target word line by outputting the plurality of sub word line driving signals in a first order, and, based on an even signal representing that a main word line driving signal driving an even word line is activated, generate the plurality of encoded sub word line driving signals by outputting the plurality of sub word line driving signals in a second order, and a word line driving circuit configured to drive the target word line at a first voltage level or a second voltage level.

Memory device including sub word line driving circuit

A mobile terminal comprises a body including a first frame and a second frame slidably coupled to a rear surface of the first frame in a first direction or a second direction; a flexible display unit including a front portion located on a front surface of the body, a rear portion located on a rear surface of the body, and a side portion connecting the front portion with the rear portion and surrounding one side of the body; a plurality of reinforcing ribs protruded from a rear surface of the first frame and extended in the first direction; and a plurality of supports protruded from a front surface of the second frame and located between the respective reinforcing ribs. The mobile terminal may enhance usability and portability by varying its size.

Mobile terminal with extendable display

A sub word-line driver circuit of a semiconductor memory device includes a first active pattern and a second active pattern in a substrate, and a gate pattern. The first active pattern includes a first drain region and a first source region of a first keeping transistor that precharges a first word-line which is inactive and extends in a first direction with a negative voltage. The second active pattern includes a second drain region and a second source region of a second keeping transistor that precharges a second word-line which is inactive and extends in the first direction with the negative voltage. The gate pattern is on a portion of the first active pattern and on a portion of the second active pattern, partially overlaps the first active pattern and the second active pattern.

Sub word-line driver circuit of semiconductor memory device and semiconductor memory device including the same

Disclosed is a solar cell panel including a plurality of solar cells including a first solar cell and a second solar cell. Each of the first and second solar cells includes a semiconductor substrate, a first conductive area disposed on a first surface of the semiconductor substrate, a second conductive area disposed on a second surface of the semiconductor substrate which is opposite the first surface of the semiconductor substrate, a first transparent electrode layer disposed on the first conductive area, a second transparent electrode layer disposed on the second conductive area, and a plurality of interconnectors spaced apart from one another at a constant pitch on the first transparent electrode layer so as to extend in a given direction. Each of the first and second solar cells lacks a metal electrode intersecting the plurality of interconnectors on the semiconductor substrate.

Solar cell panel

A sub-word-line driver and semiconductor memory devices including the same are provided. The sub-word-line driver may include a word line pull-up transistor, a word line pull-down transistor, and a keeping transistor configured to maintain a word line at a specified voltage level. The sub-word-line driver may include a peripheral active region on a substrate, a first peripheral gate electrode that corresponds to a gate node of the word line pull-down transistor on the peripheral active region, a second peripheral gate electrode that corresponds to a gate node of the keeping transistor on the peripheral active region, and a first lower contact coupled to a first region of the peripheral active region. A first (VBB) voltage from the first region may be supplied to a source node of the keeping transistor.

Sub-word-line drivers and semiconductor memory devices including the same

Growing community of inventors

Seoul, South Korea

Sangwook Park