Samsung Electronics Co., Ltd.

Sangsu Park

Taeyon Lee

Beomsuk Lee

Kwansik Kim

Sangchun Park

Changhwa Kim

Beom Suk Lee

Junghun Kim

Kyungrae Byun

Sejung Park

Hongki Kim

Gwideok Ryan Lee

A bonding quality test circuit includes a switching circuit configured to provide a connection between a sensing node and a bonding node, the bonding node corresponding to a first end of a bonding resistor that is between a line provided to a memory device and a peripheral circuit, a precharging circuit configured to provide a precharge voltage to the line and the sensing node when the precharging circuit is connected to the line and the sensing node by the switching circuit, a latch circuit that includes a first node configured to provide a control output signal to the precharging circuit and a second node configured to have a voltage that is phase inverted with respect to a voltage of the control output signal, and a first transistor configured to provide an output signal according to the sensing node when the first transistor is connected to the second node.

Bonding quality test method, bonding quality test circuit, and memory device including bonding quality test circuit

An image sensor includes pixel regions separated by an isolation region and receiving incident light, color filters respectively disposed on a surface of the semiconductor substrate corresponding to the pixel regions, a cover insulating layer disposed on the surface of the semiconductor substrate and covering the color filters, first transparent electrodes disposed on the cover insulating layer and spaced apart to respectively overlap the color filters, an isolation pattern disposed on the cover insulating layer between the first transparent electrodes and having a trench spaced apart from the first transparent electrodes, a drain electrode disposed in the trench of the isolation pattern, and an organic photoelectric layer and a second transparent electrode sequentially disposed on the first transparent electrodes and the isolation pattern.

Image sensor and method of manufacturing same

An image sensor includes a first substrate having a first surface and a second surface opposite to the first surface. The first substrate includes an active pixel region having a plurality of active pixels. A plurality of lower electrode structures is disposed on the second surface of the first substrate and corresponds to the plurality of active pixels. An upper electrode is disposed on the plurality of lower electrode structures. An organic photoelectric conversion layer is disposed between the plurality of lower electrode structures and the upper electrode. A second substrate is disposed on the first surface of the first substrate. A driving circuit configured to drive the plurality of active pixels is disposed on the second substrate. The plurality of lower electrode structures includes a first barrier layer, a reflective layer disposed on the first barrier layer and a second barrier layer disposed on the reflective layer.

Image sensors having lower electrode structures below an organic photoelectric conversion layer

An image sensor includes an insulating pattern disposed on a semiconductor substrate and having an opening, a color filter disposed within the opening of the insulating pattern, a capping insulating layer disposed on the color filter, a first electrode disposed on the capping insulating layer and having a portion overlapping with the color filter, a separation structure surrounding a side surface of the first electrode, and a photoelectric layer disposed on the first electrode. The separation structure includes a first insulating layer and a second insulating layer formed of different material.

Image sensor

Image sensors having separation structures

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Seoul, South Korea

Sangsu Park