Samsung Electronics Co., Ltd.

Sangsoo Park

Hochul Hwang

Yohan Lee

Jaeduk Yu

Kiwon Kim

Hangil Moon

Yonghyuk Choi

Gangyoul Kim

Joonsuc Jang

JaeHyun Kim

Jaeha Park

Dongmoon Ok

Sanghoon Lee

Minseok Kim

Chiweon Yoon

Jisu Kim

Woojin Cho

Byounghee Lee

Joonrae Cho

Hyunggon Kim

Kyoungho Bang

Jonghoon Park

Hyunwook Kim

Hyunggwang Kang

Jaemo Yang

Hyunjoong Kim

Beakkwon Son

Changshik Yoon

Choonghyo Park

Myoungsung Sim

Mira Seo

Namil Lee

Chulmin Choi

Hyunchul Yang

Yangsu Kim

Kihoon Kang

Sungmin Joe

Keunwon Jang

Hakhoon Song

Vadim Kudryavtsev

Jayang Yoon

Junehong Park

Hyunmin Choi

Myeongwan Gang

Byeongjun Kim

Chihyun Kim

Hyeongdo Choi

Limsam Lim

Kalicharan Gajula

A method of controlling a nonvolatile memory device, includes: determining, based on a write address, whether selected memory cells of the nonvolatile memory device corresponding to the write address are included in an over-erased group; based on the selected memory cells being included in the over-erased group, performing a preprogram operation to increase threshold voltages of an over-erased state of the selected memory cells; and after completion of the preprogram operation, performing a data program operation to store write data in the selected memory cells.

Method of determining and preprogramming over-erases groups of memory cells

A memory device including: a memory cell array including a plurality of memory blocks; a voltage generator configured to generate an erase voltage and row line voltages to be provided to a target block of the plurality of memory blocks on which an erase operation is to be performed; and a control logic circuit configured to control the memory cell array and the voltage generator, wherein, during the erase operation, after a precharge voltage is applied to a plurality of string select lines connected to the target block, the control logic circuit is further configured to provide the erase voltage to a plurality of bit lines connected to the plurality of string select lines, wherein the plurality of string select lines includes a first string select line and a second string select line, wherein a first distance between the first string select line and ends of a plurality of word lines connected to the target block is less than a second distance between the second string select line and the ends of the plurality of word lines, and wherein a first threshold voltage of a first transistor connected to the first string select line is higher than a second threshold voltage of a second transistor connected to the second string select line.

Memory device including string select transistors having different threshold voltages and method of operating the memory device

A non-volatile memory device includes a memory cell array including memory cells coupled to word lines, a boost circuit that receives an external power supply voltage and generate a boosted voltage based on the external power supply voltage, a regulator that generates a regulated voltage based on the external power supply voltage, and a control logic that controls word line voltages provided to the word lines. The control logic performs plural program loops in a program operation for the memory cell array. The control logic provides an adjacent word line voltage to an adjacent word line that is adjacent to a selected word line. In a first section of the program loops, the control logic provides the regulated voltage as the adjacent word line voltage, and in a second section of the program loops, the control logic provides the boosted voltage as the adjacent word line voltage.

Non-volatile memory device, storage device having the same and operating method of non-volatile memory device

Provided is an operating method of a nonvolatile memory device. The operating method includes receiving a read command, increasing a voltage applied to a plurality of unselected ground selection lines from an off voltage to an on voltage during a word line setup period, applying a first voltage to a first selected ground selection line corresponding to a first process characteristic, until a first time in the word line setup period, applying a second voltage to the first selected ground selection line after the first time in the word line setup period, applying the first voltage to a second selected ground selection line corresponding to a second process characteristic, until a second time earlier than the first time in the word line setup period, and applying the second voltage to the second selected ground selection line after the second time in the word line setup period.

Nonvolatile memory device and operating method thereof

According to various embodiments of the disclosure, an electronic device may include: a first housing, a second housing accommodating at least a portion of the first housing and configured to guide sliding movement of the first housing, a flexible display including a first display area disposed on the first housing and a second display area extending from the first display area, a speaker module including a speaker unit including at least one speaker disposed in the second housing and a speaker enclosure accommodating the speaker unit and including a vent hole, and a seal connected to the first housing and the speaker enclosure and configured to be variable based on the sliding movement of the first housing.

Electronic device including speaker module

An electronic device and method are disclosed. The electronic device includes an internal microphone, a communication module, and at least one processor. The processor implements the method, including: receiving, through the communication module, a first audio signal input through an external microphone included in an external electronic device communicatively connected to the electronic device, activating the internal microphone in response to detecting a device switch event switching from the external microphone to the internal microphone while receiving the first audio signal, receiving a second audio signal input through the internal microphone, synchronizing and mixing the first audio signal and the second audio signal during a designated first time period, and deactivating the external microphone upon detecting lapse of the designated first time period.

Electronic device for audio input and method for operating the same

An electronic device, according to various embodiments of the present invention, comprises: a first speaker arranged on one side end of the electronic device; a second speaker arranged on the other side end of the electronic device; at least one sensor; and a processor, wherein the processor may be configured so as to receive a first audio signal, acquire a first channel signal and a second channel signal by using the first audio signal, acquire state information associated with the electronic device by using the at least one sensor, correct at least one portion of the first channel signal on the basis of at least the state information, output the corrected first channel signal using the first speaker, and output the second channel signal using the second speaker. In addition, various embodiments are possible.

Electronic device, and method for processing stereo audio signal thereof

Provided is a storage device that performs a read operation by using a time interleaved sampling page buffer. The storage device controls a sensing point in time, when bit lines of even page buffer circuits are sensed, and a sensing point in time, when bit lines of odd page buffer circuits are sensed, with a certain time difference, and performs an Even Odd Sensing (EOS) operation in a stated order of even sensing and odd sensing. The storage device performs a two-step EOS operation and performs a main sensing operation on a selected memory cell according to a result of the two-step EOS operation.

Storage device performing read operation by using time interleaved sampling page buffer

An audio output device according to an embodiment may include: a short-range communication module configured to perform short-range wireless communication; a memory configured to buffer audio data received from an external electronic device through the short-range communication module; an audio output unit configured to output the audio data; and a processor. The processor may be configured to: receive operation mode information related to a function being executed in the external electronic device from the external electronic device through the short-range communication module; configure a reference period corresponding to an amount of the audio data buffered in the memory based on the operation mode information; and determine a playback speed of the audio data to be output through the audio output unit by comparing the amount of the buffered audio data with the configured reference period. In addition, various other embodiments may be possible.

Audio output device and method for controlling output speed of audio data thereof

A nonvolatile memory device that performs two-way channel precharge during programming is provided. A program operation of the nonvolatile memory device simultaneously performs a first precharge operation in a bit line direction and a second precharge operation in a source line direction on channels of a plurality of cell strings before programming a selected memory cell to initialize the channels. The first precharge operation precharges the channels of the plurality of cell strings using a first precharge voltage applied to the bit line through first and second string selection transistors, and the second precharge operation precharges the channels of the plurality of cell strings using a second precharge voltage applied to the source line through first and second ground selection transistors.

Nonvolatile memory device performing two-way channel precharge

Various embodiments of the present invention relate to a device and method for processing an audio signal by using a setting related to a volume of an audio signal in an electronic device. The electronic device may comprise a sound output device and a processor, wherein the processor is configured to: check a setting related to a volume of an audio signal to be output using the sound output device; when the setting related to the volume falls into a first designated range, process the audio signal in a state where the range of the volume is set to have a first resolution; when the setting related to the volume falls into a second designated range, process the audio signal in a state where the range of the volume is set to have a second resolution; and output the audio signal by using the sound output device, the audio signal having been processed in a state where the range of the volume is set to have a resolution corresponding to one of the first resolution and the second resolution. Other embodiments may be possible.

Method and electronic device for processing audio signal on basis of resolution set on basis of volume of audio signal

Methods and apparatuses are provided for processing audio data at an electronic device. Audio data is obtained. A type of the audio data is identified. An audio processing mode corresponding to the type of the audio data is selected. An audio track of the audio data is output, based on the audio processing mode.

Electronic device and method for processing audio data

Growing community of inventors

Gyeonggi-do, South Korea

Sangsoo Park