Skhynix Inc.

Sangmuk Oh

Jihwan Kim

Donguk Lee

Heonyong Chang

Kangseol Lee

A semiconductor device may include: first to n-th through-electrodes; first to n-th through-electrode driving circuits suitable for charging the first to n-th through-electrodes to a first voltage level, or discharging the first to n-th through-electrodes to a second voltage level; and first to n-th error detection circuits, each suitable for storing the first voltage level or the second voltage level of a corresponding through-electrode of the first to n-th through-electrodes as a down-detection signal and an up-detection signal, and outputting a corresponding error detection signal of first to n-th error detection signals by sequentially masking the down-detection signal and the up-detection signal.

Semiconductor device and test method thereof

A stacked semiconductor device may include: a base die; and a plurality of core dies stacked over the base die and coupled to each other through a plurality of through-electrodes and a reference through-electrode, wherein the base die includes a first test circuit suitable for transferring a test oscillating signal to at least one target through-electrode among the through-electrodes, and outputting a test output signal by comparing a test base signal generated based on the test oscillating signal, with a test core signal transferred through the reference through-electrode, during a test operation; and wherein each of the core dies includes a second test circuit suitable for generating the test core signal corresponding to the test oscillating signal transferred through the target through-electrode, and transferring the test core signal to the reference through-electrode, during the test operation.

Stacked semiconductor device and test method thereof

A semiconductor device includes a forcing line extending in a first direction over a through-electrode, and electrically coupled to the through-electrode; a first monitoring line formed separate from the forcing line by a first interval in a second direction, and extended in the first direction; a second monitoring line formed separate from the forcing line by a second interval in an opposite direction to the second direction, and extended in the first direction; and a selection circuit suitable for outputting a detection signal by selecting any one of a plurality of voltage levels of the first and second monitoring lines according to a monitoring signal.

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Gyeonggi-do, South Korea

Sangmuk Oh